Luminescence properties of isolated InGaN/GaN quantum dots

R.W. Martin, P.R. Edwards, R.A. Taylor, J.H. Rice, J.H. Na, J.W. Robinson, J.D. Smith, C. Liu, I.M. Watson

Research output: Contribution to journalArticle

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Abstract

InxGa1–xN quantum dots have been fabricated by the selective growth of GaN micro-pyramid arrays topped with InGaN/GaN quantum wells. The spatially- and spectrally-resolved luminescence properties of these structures were measured using low-temperature micro-photoluminescence spectroscopy. The presence of
InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit linewidths down to 650 μeV (limited by the spectrometer resolution). We describe the broadening of the luminescence peak from a single dot as a function of temperature and excitation power.
LanguageEnglish
Pages372-376
Number of pages5
JournalPhysica Status Solidi A - Applications and Materials Science
Volume202
Issue number3
DOIs
Publication statusPublished - Feb 2005

Fingerprint

Semiconductor quantum dots
Luminescence
quantum dots
luminescence
pyramids
Photoluminescence spectroscopy
Linewidth
Semiconductor quantum wells
Spectrometers
apexes
emission spectra
quantum wells
spectrometers
photoluminescence
Temperature
spectroscopy
excitation
temperature

Keywords

  • physics

Cite this

Martin, R.W. ; Edwards, P.R. ; Taylor, R.A. ; Rice, J.H. ; Na, J.H. ; Robinson, J.W. ; Smith, J.D. ; Liu, C. ; Watson, I.M. / Luminescence properties of isolated InGaN/GaN quantum dots. In: Physica Status Solidi A - Applications and Materials Science. 2005 ; Vol. 202, No. 3. pp. 372-376.
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Luminescence properties of isolated InGaN/GaN quantum dots. / Martin, R.W.; Edwards, P.R.; Taylor, R.A.; Rice, J.H.; Na, J.H.; Robinson, J.W.; Smith, J.D.; Liu, C.; Watson, I.M.

In: Physica Status Solidi A - Applications and Materials Science, Vol. 202, No. 3, 02.2005, p. 372-376.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Luminescence properties of isolated InGaN/GaN quantum dots

AU - Martin, R.W.

AU - Edwards, P.R.

AU - Taylor, R.A.

AU - Rice, J.H.

AU - Na, J.H.

AU - Robinson, J.W.

AU - Smith, J.D.

AU - Liu, C.

AU - Watson, I.M.

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AB - InxGa1–xN quantum dots have been fabricated by the selective growth of GaN micro-pyramid arrays topped with InGaN/GaN quantum wells. The spatially- and spectrally-resolved luminescence properties of these structures were measured using low-temperature micro-photoluminescence spectroscopy. The presence ofInGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit linewidths down to 650 μeV (limited by the spectrometer resolution). We describe the broadening of the luminescence peak from a single dot as a function of temperature and excitation power.

KW - physics

U2 - 10.1002/pssa.200460307

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