Luminescence properties of dislocations in α-Ga2O3

Mugove Maruzane; Yuichi Oshima; Olha Makydonska; Paul R Edwards; Robert W Martin; Fabien C-P Massabuau

doi:10.1088/1361-6463/ad8894

Luminescence properties of dislocations in α-Ga2O3

Mugove Maruzane^*, Yuichi Oshima, Olha Makydonska, Paul R Edwards, Robert W Martin, Fabien C-P Massabuau

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Dislocations in epitaxial lateral overgrown α-Ga2O3 are investigated using hyperspectral cathodoluminescence spectroscopy. The dislocations are associated with a reduction of self-trapped hole-related luminescence (ca. 3.6 eV line) which can be ascribed to their actions as non-radiative recombination sites for free electrons, to a reduction in free electron density due to Fermi level pinning or to electron trapping at donor states. An increase in the intensity of the ca. 2.8 eV and 3.2 eV lines are observed at the dislocations, suggesting an increase in donor-acceptor pair transitions and providing strong evidence that point defects segregate at dislocations.

Original language	English
Article number	03LT02
Number of pages	7
Journal	Journal of Physics D: Applied Physics
Volume	58
Issue number	3
Early online date	18 Oct 2024
DOIs	https://doi.org/10.1088/1361-6463/ad8894
Publication status	Published - 20 Jan 2025

Funding

The authors acknowledge support from the Engineering and Physical Sciences Research Council (EPSRC Grant No. EP/K011952/1). O.M. would like to acknowledge support from the EPSRC Vacation Internship. The data that support the findings of this study are openly available in PurePortal at (insert link upon acceptance).

Keywords

gallium oxide
dislocation
cathodoluminescence

Access to Document

10.1088/1361-6463/ad8894Licence: CC BY 4.0

Maruzane-etal-JPD-2024-Luminescence-properties-of-dislocationsFinal published version, 937 KBLicence: CC BY 4.0

University Of Strathclyde - Equipment Account
Gachagan, A. (Principal Investigator), He, W. (Principal Investigator), Jaroszynski, D. (Principal Investigator), Martin, R. (Principal Investigator), McArthur, S. (Principal Investigator), McArthur, S. (Principal Investigator), Connolly, P. (Co-investigator), Edwards, P. (Co-investigator), Faulds, K. (Co-investigator), Florence, A. (Co-investigator), Graham, D. (Co-investigator), Leithead, B. (Co-investigator), Sefcik, J. (Co-investigator), Ter Horst, J. (Co-investigator), Trager-Cowan, C. (Co-investigator), Uttamchandani, D. (Co-investigator) & Wark, A. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/08/13 → 28/02/23
Project: Research

Data for "Luminescence properties of dislocations in α-Ga2O3"
Maruzane, M. (Creator), Oshima, Y. (Creator), Makydonska, O. (Creator), Edwards, P. (Creator), Martin, R. (Creator) & Massabuau, F. (Creator), University of Strathclyde, 28 Oct 2024
DOI: 10.15129/8bf33f6a-66d1-4a37-9330-422ad03aa382
Dataset

2024 Emerging Leader in J. Phys. D: Appl. Phys.
Massabuau, F. (Recipient), 2024
Prize: National/international honour

Cite this

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title = "Luminescence properties of dislocations in α-Ga2O3",

abstract = "Dislocations in epitaxial lateral overgrown α-Ga2O3 are investigated using hyperspectral cathodoluminescence spectroscopy. The dislocations are associated with a reduction of self-trapped hole-related luminescence (ca. 3.6 eV line) which can be ascribed to their actions as non-radiative recombination sites for free electrons, to a reduction in free electron density due to Fermi level pinning or to electron trapping at donor states. An increase in the intensity of the ca. 2.8 eV and 3.2 eV lines are observed at the dislocations, suggesting an increase in donor-acceptor pair transitions and providing strong evidence that point defects segregate at dislocations.",

keywords = "gallium oxide, dislocation, cathodoluminescence",

author = "Mugove Maruzane and Yuichi Oshima and Olha Makydonska and Edwards, {Paul R} and Martin, {Robert W} and Massabuau, {Fabien C-P}",

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AU - Oshima, Yuichi

AU - Makydonska, Olha

AU - Edwards, Paul R

AU - Martin, Robert W

AU - Massabuau, Fabien C-P

PY - 2025/1/20

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N2 - Dislocations in epitaxial lateral overgrown α-Ga2O3 are investigated using hyperspectral cathodoluminescence spectroscopy. The dislocations are associated with a reduction of self-trapped hole-related luminescence (ca. 3.6 eV line) which can be ascribed to their actions as non-radiative recombination sites for free electrons, to a reduction in free electron density due to Fermi level pinning or to electron trapping at donor states. An increase in the intensity of the ca. 2.8 eV and 3.2 eV lines are observed at the dislocations, suggesting an increase in donor-acceptor pair transitions and providing strong evidence that point defects segregate at dislocations.

AB - Dislocations in epitaxial lateral overgrown α-Ga2O3 are investigated using hyperspectral cathodoluminescence spectroscopy. The dislocations are associated with a reduction of self-trapped hole-related luminescence (ca. 3.6 eV line) which can be ascribed to their actions as non-radiative recombination sites for free electrons, to a reduction in free electron density due to Fermi level pinning or to electron trapping at donor states. An increase in the intensity of the ca. 2.8 eV and 3.2 eV lines are observed at the dislocations, suggesting an increase in donor-acceptor pair transitions and providing strong evidence that point defects segregate at dislocations.

KW - gallium oxide

KW - dislocation

KW - cathodoluminescence

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ER -

Luminescence properties of dislocations in α-Ga2O3

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University Of Strathclyde - Equipment Account

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Data for "Luminescence properties of dislocations in α-Ga2O3"

Prizes

2024 Emerging Leader in J. Phys. D: Appl. Phys.

Cite this