Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range

K. Wang, K.P. O'Donnell, B. Hourahine, R.W. Martin, I.M. Watson, K. Lorenz, E. Alves

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32 Citations (Scopus)

Abstract

Photoluminescence (PL) and PL excitation (PLE) spectra of Eu-implanted AlxGa1-xN are obtained across the whole alloy composition range. The dominant D-5(0)-F-7(2) emission band broadens and then narrows as x increases from 0 to 1 while the peak shifts monotonically. This behavior is surprisingly similar to the broadening of excitons in a semiconductor alloy caused by composition fluctuations [E. F. Schubert et al., Phys. Rev. B 30, 813 (1984). PLE spectra reveal a steplike AlxGa1-xN band-edge absorption and two "subgap" bands X-1,X-2:X-1 peaks at 3.26 eV in GaN and shifts linearly to 3.54 eV in AlN. For x > 0.6, X-2 emerges approximately 1 eV higher in energy than X-1 and shifts in a similar way. We propose that X-1,X-2 involve creation of core-excitonic complexes of Eu emitting centers.
Original languageEnglish
Article number125206
Number of pages6
JournalPhysical Review B
Volume80
Issue number12
DOIs
Publication statusPublished - Sep 2009

Keywords

  • rare-earth ions
  • iii-v semiconductors
  • tm-doped alxga1-xn
  • implanted gan
  • optical-properties
  • temperature
  • aln
  • photoluminescence
  • intensities
  • excitation

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