Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range

K. Wang, K.P. O'Donnell, B. Hourahine, R.W. Martin, I.M. Watson, K. Lorenz, E. Alves

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Photoluminescence (PL) and PL excitation (PLE) spectra of Eu-implanted AlxGa1-xN are obtained across the whole alloy composition range. The dominant D-5(0)-F-7(2) emission band broadens and then narrows as x increases from 0 to 1 while the peak shifts monotonically. This behavior is surprisingly similar to the broadening of excitons in a semiconductor alloy caused by composition fluctuations [E. F. Schubert et al., Phys. Rev. B 30, 813 (1984). PLE spectra reveal a steplike AlxGa1-xN band-edge absorption and two "subgap" bands X-1,X-2:X-1 peaks at 3.26 eV in GaN and shifts linearly to 3.54 eV in AlN. For x > 0.6, X-2 emerges approximately 1 eV higher in energy than X-1 and shifts in a similar way. We propose that X-1,X-2 involve creation of core-excitonic complexes of Eu emitting centers.
LanguageEnglish
Article number125206
Number of pages6
JournalPhysical Review B
Volume80
Issue number12
DOIs
Publication statusPublished - Sep 2009

Fingerprint

Luminescence
Photoluminescence
Ions
luminescence
shift
Chemical analysis
Excitons
photoluminescence
ions
Semiconductor materials
excitation
excitons
energy
LDS 751

Keywords

  • rare-earth ions
  • iii-v semiconductors
  • tm-doped alxga1-xn
  • implanted gan
  • optical-properties
  • temperature
  • aln
  • photoluminescence
  • intensities
  • excitation

Cite this

@article{319b899005c348ff8188d975fb1e7a92,
title = "Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range",
abstract = "Photoluminescence (PL) and PL excitation (PLE) spectra of Eu-implanted AlxGa1-xN are obtained across the whole alloy composition range. The dominant D-5(0)-F-7(2) emission band broadens and then narrows as x increases from 0 to 1 while the peak shifts monotonically. This behavior is surprisingly similar to the broadening of excitons in a semiconductor alloy caused by composition fluctuations [E. F. Schubert et al., Phys. Rev. B 30, 813 (1984). PLE spectra reveal a steplike AlxGa1-xN band-edge absorption and two {"}subgap{"} bands X-1,X-2:X-1 peaks at 3.26 eV in GaN and shifts linearly to 3.54 eV in AlN. For x > 0.6, X-2 emerges approximately 1 eV higher in energy than X-1 and shifts in a similar way. We propose that X-1,X-2 involve creation of core-excitonic complexes of Eu emitting centers.",
keywords = "rare-earth ions, iii-v semiconductors, tm-doped alxga1-xn, implanted gan, optical-properties, temperature, aln, photoluminescence, intensities, excitation",
author = "K. Wang and K.P. O'Donnell and B. Hourahine and R.W. Martin and I.M. Watson and K. Lorenz and E. Alves",
year = "2009",
month = "9",
doi = "10.1103/PhysRevB.80.125206",
language = "English",
volume = "80",
journal = "Physical Review B: Condensed Matter and Materials Physics",
issn = "1098-0121",
number = "12",

}

Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range. / Wang, K.; O'Donnell, K.P.; Hourahine, B.; Martin, R.W.; Watson, I.M.; Lorenz, K.; Alves, E.

In: Physical Review B, Vol. 80, No. 12, 125206 , 09.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range

AU - Wang, K.

AU - O'Donnell, K.P.

AU - Hourahine, B.

AU - Martin, R.W.

AU - Watson, I.M.

AU - Lorenz, K.

AU - Alves, E.

PY - 2009/9

Y1 - 2009/9

N2 - Photoluminescence (PL) and PL excitation (PLE) spectra of Eu-implanted AlxGa1-xN are obtained across the whole alloy composition range. The dominant D-5(0)-F-7(2) emission band broadens and then narrows as x increases from 0 to 1 while the peak shifts monotonically. This behavior is surprisingly similar to the broadening of excitons in a semiconductor alloy caused by composition fluctuations [E. F. Schubert et al., Phys. Rev. B 30, 813 (1984). PLE spectra reveal a steplike AlxGa1-xN band-edge absorption and two "subgap" bands X-1,X-2:X-1 peaks at 3.26 eV in GaN and shifts linearly to 3.54 eV in AlN. For x > 0.6, X-2 emerges approximately 1 eV higher in energy than X-1 and shifts in a similar way. We propose that X-1,X-2 involve creation of core-excitonic complexes of Eu emitting centers.

AB - Photoluminescence (PL) and PL excitation (PLE) spectra of Eu-implanted AlxGa1-xN are obtained across the whole alloy composition range. The dominant D-5(0)-F-7(2) emission band broadens and then narrows as x increases from 0 to 1 while the peak shifts monotonically. This behavior is surprisingly similar to the broadening of excitons in a semiconductor alloy caused by composition fluctuations [E. F. Schubert et al., Phys. Rev. B 30, 813 (1984). PLE spectra reveal a steplike AlxGa1-xN band-edge absorption and two "subgap" bands X-1,X-2:X-1 peaks at 3.26 eV in GaN and shifts linearly to 3.54 eV in AlN. For x > 0.6, X-2 emerges approximately 1 eV higher in energy than X-1 and shifts in a similar way. We propose that X-1,X-2 involve creation of core-excitonic complexes of Eu emitting centers.

KW - rare-earth ions

KW - iii-v semiconductors

KW - tm-doped alxga1-xn

KW - implanted gan

KW - optical-properties

KW - temperature

KW - aln

KW - photoluminescence

KW - intensities

KW - excitation

U2 - 10.1103/PhysRevB.80.125206

DO - 10.1103/PhysRevB.80.125206

M3 - Article

VL - 80

JO - Physical Review B: Condensed Matter and Materials Physics

T2 - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

SN - 1098-0121

IS - 12

M1 - 125206

ER -