Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range

K. Wang; K.P. O'Donnell; B. Hourahine; R.W. Martin; I.M. Watson; K. Lorenz; E. Alves

doi:10.1103/PhysRevB.80.125206

Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range

K. Wang, K.P. O'Donnell, B. Hourahine, R.W. Martin, I.M. Watson, K. Lorenz, E. Alves

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Photoluminescence (PL) and PL excitation (PLE) spectra of Eu-implanted AlxGa1-xN are obtained across the whole alloy composition range. The dominant D-5(0)-F-7(2) emission band broadens and then narrows as x increases from 0 to 1 while the peak shifts monotonically. This behavior is surprisingly similar to the broadening of excitons in a semiconductor alloy caused by composition fluctuations [E. F. Schubert et al., Phys. Rev. B 30, 813 (1984). PLE spectra reveal a steplike AlxGa1-xN band-edge absorption and two "subgap" bands X-1,X-2:X-1 peaks at 3.26 eV in GaN and shifts linearly to 3.54 eV in AlN. For x > 0.6, X-2 emerges approximately 1 eV higher in energy than X-1 and shifts in a similar way. We propose that X-1,X-2 involve creation of core-excitonic complexes of Eu emitting centers.

Original language	English
Article number	125206
Number of pages	6
Journal	Physical Review B
Volume	80
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.80.125206
Publication status	Published - Sept 2009

Keywords

rare-earth ions
iii-v semiconductors
tm-doped alxga1-xn
implanted gan
optical-properties
temperature
aln
photoluminescence
intensities
excitation

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10.1103/PhysRevB.80.125206

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@article{319b899005c348ff8188d975fb1e7a92,

title = "Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range",

abstract = "Photoluminescence (PL) and PL excitation (PLE) spectra of Eu-implanted AlxGa1-xN are obtained across the whole alloy composition range. The dominant D-5(0)-F-7(2) emission band broadens and then narrows as x increases from 0 to 1 while the peak shifts monotonically. This behavior is surprisingly similar to the broadening of excitons in a semiconductor alloy caused by composition fluctuations [E. F. Schubert et al., Phys. Rev. B 30, 813 (1984). PLE spectra reveal a steplike AlxGa1-xN band-edge absorption and two {"}subgap{"} bands X-1,X-2:X-1 peaks at 3.26 eV in GaN and shifts linearly to 3.54 eV in AlN. For x > 0.6, X-2 emerges approximately 1 eV higher in energy than X-1 and shifts in a similar way. We propose that X-1,X-2 involve creation of core-excitonic complexes of Eu emitting centers.",

keywords = "rare-earth ions, iii-v semiconductors, tm-doped alxga1-xn, implanted gan, optical-properties, temperature, aln, photoluminescence, intensities, excitation",

author = "K. Wang and K.P. O'Donnell and B. Hourahine and R.W. Martin and I.M. Watson and K. Lorenz and E. Alves",

year = "2009",

month = sep,

doi = "10.1103/PhysRevB.80.125206",

language = "English",

volume = "80",

journal = "Physical Review B",

issn = "1098-0121",

publisher = "American Physical Society",

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TY - JOUR

T1 - Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range

AU - Wang, K.

AU - O'Donnell, K.P.

AU - Hourahine, B.

AU - Martin, R.W.

AU - Watson, I.M.

AU - Lorenz, K.

AU - Alves, E.

PY - 2009/9

Y1 - 2009/9

N2 - Photoluminescence (PL) and PL excitation (PLE) spectra of Eu-implanted AlxGa1-xN are obtained across the whole alloy composition range. The dominant D-5(0)-F-7(2) emission band broadens and then narrows as x increases from 0 to 1 while the peak shifts monotonically. This behavior is surprisingly similar to the broadening of excitons in a semiconductor alloy caused by composition fluctuations [E. F. Schubert et al., Phys. Rev. B 30, 813 (1984). PLE spectra reveal a steplike AlxGa1-xN band-edge absorption and two "subgap" bands X-1,X-2:X-1 peaks at 3.26 eV in GaN and shifts linearly to 3.54 eV in AlN. For x > 0.6, X-2 emerges approximately 1 eV higher in energy than X-1 and shifts in a similar way. We propose that X-1,X-2 involve creation of core-excitonic complexes of Eu emitting centers.

AB - Photoluminescence (PL) and PL excitation (PLE) spectra of Eu-implanted AlxGa1-xN are obtained across the whole alloy composition range. The dominant D-5(0)-F-7(2) emission band broadens and then narrows as x increases from 0 to 1 while the peak shifts monotonically. This behavior is surprisingly similar to the broadening of excitons in a semiconductor alloy caused by composition fluctuations [E. F. Schubert et al., Phys. Rev. B 30, 813 (1984). PLE spectra reveal a steplike AlxGa1-xN band-edge absorption and two "subgap" bands X-1,X-2:X-1 peaks at 3.26 eV in GaN and shifts linearly to 3.54 eV in AlN. For x > 0.6, X-2 emerges approximately 1 eV higher in energy than X-1 and shifts in a similar way. We propose that X-1,X-2 involve creation of core-excitonic complexes of Eu emitting centers.

KW - rare-earth ions

KW - iii-v semiconductors

KW - tm-doped alxga1-xn

KW - implanted gan

KW - optical-properties

KW - temperature

KW - aln

KW - photoluminescence

KW - intensities

KW - excitation

U2 - 10.1103/PhysRevB.80.125206

DO - 10.1103/PhysRevB.80.125206

M3 - Article

SN - 1098-0121

VL - 80

JO - Physical Review B

JF - Physical Review B

IS - 12

M1 - 125206

ER -

Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range

Abstract

Keywords

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