Abstract
Predominantly orange-red, but occasionally green, blue or deep red luminescence is observed following electrochemical etching of p-type epitaxial silicon in HF solution. Photoluminescence and cathodoluminescence of the same samples are compared. The dependence of the photoluminescence spectrum on the sample temperature and on the excitation density, considered together with its nonexponential decay profile, suggest that the dominant luminescence process in porous silicon is recombination of quantum-confined carriers in a disordered medium. In addition, cathodoluminescence reveals the presence of 'hot spots' which show bright features of uncertain origin.
| Language | English |
|---|---|
| Article number | 015 |
| Pages | 92-96 |
| Number of pages | 5 |
| Journal | Semiconductor Science and Technology |
| Volume | 8 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Dec 1993 |
Fingerprint
Keywords
- luminescence
- cathodoluminescence
- silicon microcrystals
Cite this
}
Luminescence from porous silicon. / Chen, X; Uttamchandani, D; Trager-Cowan, C; O'Donnell, K P.
In: Semiconductor Science and Technology, Vol. 8, No. 1, 015, 01.12.1993, p. 92-96.Research output: Contribution to journal › Article
TY - JOUR
T1 - Luminescence from porous silicon
AU - Chen, X
AU - Uttamchandani, D
AU - Trager-Cowan, C
AU - O'Donnell, K P
PY - 1993/12/1
Y1 - 1993/12/1
N2 - Predominantly orange-red, but occasionally green, blue or deep red luminescence is observed following electrochemical etching of p-type epitaxial silicon in HF solution. Photoluminescence and cathodoluminescence of the same samples are compared. The dependence of the photoluminescence spectrum on the sample temperature and on the excitation density, considered together with its nonexponential decay profile, suggest that the dominant luminescence process in porous silicon is recombination of quantum-confined carriers in a disordered medium. In addition, cathodoluminescence reveals the presence of 'hot spots' which show bright features of uncertain origin.
AB - Predominantly orange-red, but occasionally green, blue or deep red luminescence is observed following electrochemical etching of p-type epitaxial silicon in HF solution. Photoluminescence and cathodoluminescence of the same samples are compared. The dependence of the photoluminescence spectrum on the sample temperature and on the excitation density, considered together with its nonexponential decay profile, suggest that the dominant luminescence process in porous silicon is recombination of quantum-confined carriers in a disordered medium. In addition, cathodoluminescence reveals the presence of 'hot spots' which show bright features of uncertain origin.
KW - luminescence
KW - cathodoluminescence
KW - silicon microcrystals
UR - http://www.scopus.com/inward/record.url?scp=0027224553&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/8/1/015
DO - 10.1088/0268-1242/8/1/015
M3 - Article
VL - 8
SP - 92
EP - 96
JO - Semiconductor Science and Technology
T2 - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 1
M1 - 015
ER -