Abstract
The luminescence decay pattern of porous silicon samples prepared by electrochemical etching is characterised experimentally by a non-exponential profile, a strong dependence on temperature and an absence of spectral diffusion. We describe this luminescence as carrier-dopping-assisted recombination. Following the correlation function approach to non-dispersive transport developed by Scher and co-workers [Physics Today 41 (1991) 26], we suggest a simple derivation of analytical functions which accurately describes the anomalous luminescence decay of porous silicon, and show that this model includes exponential and Kohlrausch [Pogg. Ann. Phys. 119 (1863) 352] (stretched-exponential) relaxations as special cases.
| Original language | English |
|---|---|
| Pages (from-to) | 603-607 |
| Number of pages | 5 |
| Journal | Physica B: Physics of Condensed Matter |
| Volume | 185 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1 Apr 1993 |
Funding
This work was supportedb y the Researcha nd Development Fund of the University of Strathclyde. We are grateful to Professors B. Henderson and B. Culshaw for the provision of laboratory facilities and for helpful discussions.
Keywords
- luminescence decay
- porous silicon
- spectral diffusion