Luminescence decay of porous silicon

X. Chen, D. Uttamchandani, D. Sander, K. P. O'Donnell

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The luminescence decay pattern of porous silicon samples prepared by electrochemical etching is characterised experimentally by a non-exponential profile, a strong dependence on temperature and an absence of spectral diffusion. We describe this luminescence as carrier-dopping-assisted recombination. Following the correlation function approach to non-dispersive transport developed by Scher and co-workers [Physics Today 41 (1991) 26], we suggest a simple derivation of analytical functions which accurately describes the anomalous luminescence decay of porous silicon, and show that this model includes exponential and Kohlrausch [Pogg. Ann. Phys. 119 (1863) 352] (stretched-exponential) relaxations as special cases.

Original languageEnglish
Pages (from-to)603-607
Number of pages5
JournalPhysica B: Physics of Condensed Matter
Volume185
Issue number1-4
DOIs
Publication statusPublished - 1 Apr 1993

Keywords

  • luminescence decay
  • porous silicon
  • spectral diffusion

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