Luminescence decay of porous silicon

X. Chen, D. Uttamchandani, D. Sander, K. P. O'Donnell

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The luminescence decay pattern of porous silicon samples prepared by electrochemical etching is characterised experimentally by a non-exponential profile, a strong dependence on temperature and an absence of spectral diffusion. We describe this luminescence as carrier-dopping-assisted recombination. Following the correlation function approach to non-dispersive transport developed by Scher and co-workers [Physics Today 41 (1991) 26], we suggest a simple derivation of analytical functions which accurately describes the anomalous luminescence decay of porous silicon, and show that this model includes exponential and Kohlrausch [Pogg. Ann. Phys. 119 (1863) 352] (stretched-exponential) relaxations as special cases.

LanguageEnglish
Pages603-607
Number of pages5
JournalPhysica B: Physics of Condensed Matter
Volume185
Issue number1-4
DOIs
Publication statusPublished - 1 Apr 1993

Fingerprint

Porous silicon
porous silicon
Luminescence
luminescence
decay
Electrochemical etching
derivation
Physics
etching
physics
profiles
Temperature
temperature

Keywords

  • luminescence decay
  • porous silicon
  • spectral diffusion

Cite this

@article{9218e677e7ac486db208cb6eb35b15cd,
title = "Luminescence decay of porous silicon",
abstract = "The luminescence decay pattern of porous silicon samples prepared by electrochemical etching is characterised experimentally by a non-exponential profile, a strong dependence on temperature and an absence of spectral diffusion. We describe this luminescence as carrier-dopping-assisted recombination. Following the correlation function approach to non-dispersive transport developed by Scher and co-workers [Physics Today 41 (1991) 26], we suggest a simple derivation of analytical functions which accurately describes the anomalous luminescence decay of porous silicon, and show that this model includes exponential and Kohlrausch [Pogg. Ann. Phys. 119 (1863) 352] (stretched-exponential) relaxations as special cases.",
keywords = "luminescence decay, porous silicon, spectral diffusion",
author = "X. Chen and D. Uttamchandani and D. Sander and O'Donnell, {K. P.}",
year = "1993",
month = "4",
day = "1",
doi = "10.1016/0921-4526(93)90303-N",
language = "English",
volume = "185",
pages = "603--607",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
number = "1-4",

}

Luminescence decay of porous silicon. / Chen, X.; Uttamchandani, D.; Sander, D.; O'Donnell, K. P.

In: Physica B: Physics of Condensed Matter, Vol. 185, No. 1-4, 01.04.1993, p. 603-607.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Luminescence decay of porous silicon

AU - Chen, X.

AU - Uttamchandani, D.

AU - Sander, D.

AU - O'Donnell, K. P.

PY - 1993/4/1

Y1 - 1993/4/1

N2 - The luminescence decay pattern of porous silicon samples prepared by electrochemical etching is characterised experimentally by a non-exponential profile, a strong dependence on temperature and an absence of spectral diffusion. We describe this luminescence as carrier-dopping-assisted recombination. Following the correlation function approach to non-dispersive transport developed by Scher and co-workers [Physics Today 41 (1991) 26], we suggest a simple derivation of analytical functions which accurately describes the anomalous luminescence decay of porous silicon, and show that this model includes exponential and Kohlrausch [Pogg. Ann. Phys. 119 (1863) 352] (stretched-exponential) relaxations as special cases.

AB - The luminescence decay pattern of porous silicon samples prepared by electrochemical etching is characterised experimentally by a non-exponential profile, a strong dependence on temperature and an absence of spectral diffusion. We describe this luminescence as carrier-dopping-assisted recombination. Following the correlation function approach to non-dispersive transport developed by Scher and co-workers [Physics Today 41 (1991) 26], we suggest a simple derivation of analytical functions which accurately describes the anomalous luminescence decay of porous silicon, and show that this model includes exponential and Kohlrausch [Pogg. Ann. Phys. 119 (1863) 352] (stretched-exponential) relaxations as special cases.

KW - luminescence decay

KW - porous silicon

KW - spectral diffusion

UR - http://www.scopus.com/inward/record.url?scp=0027573974&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(93)90303-N

DO - 10.1016/0921-4526(93)90303-N

M3 - Article

VL - 185

SP - 603

EP - 607

JO - Physica B: Condensed Matter

T2 - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-4

ER -