Luminescence decay in disordered low-dimensional semiconductors

X. Chen, B. Henderson, K. P. O'Donnell

Research output: Contribution to journalArticle

120 Citations (Scopus)

Abstract

The luminescence decay of excitons in disordered low-dimensional semiconductors with quantum confinement is shown experimentally to be characterized by a nonexponential profile and an absence of spectral diffusion. We are able to describe this luminescence as a hopping-assisted recombination using the correlation function approach to nondispersive transport developed by H. Scher, M. F. Shlesinger, and J. T. Bendler [Phys. Today 41, 26 (1991)]. We suggest a simple derivation of analytical functions which accurately describe the anomalous luminescence decays of disordered II-VI superlattices and of porous silicon, and show that this model includes exponential and Kohlrausch [Pogg. Ann. Phys. 119, 352 (1863)] (stretched-exponential) relaxations as special cases.

LanguageEnglish
Pages2672-2674
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number21
DOIs
Publication statusPublished - 1 Dec 1992

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luminescence
decay
porous silicon
superlattices
derivation
excitons
profiles

Keywords

  • luminescence decay
  • spectral diffusion
  • porous silicon

Cite this

Chen, X. ; Henderson, B. ; O'Donnell, K. P. / Luminescence decay in disordered low-dimensional semiconductors. In: Applied Physics Letters. 1992 ; Vol. 60, No. 21. pp. 2672-2674.
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Luminescence decay in disordered low-dimensional semiconductors. / Chen, X.; Henderson, B.; O'Donnell, K. P.

In: Applied Physics Letters, Vol. 60, No. 21, 01.12.1992, p. 2672-2674.

Research output: Contribution to journalArticle

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