Luminescence decay in disordered low-dimensional semiconductors

X. Chen, B. Henderson, K. P. O'Donnell

Research output: Contribution to journalArticlepeer-review

123 Citations (Scopus)


The luminescence decay of excitons in disordered low-dimensional semiconductors with quantum confinement is shown experimentally to be characterized by a nonexponential profile and an absence of spectral diffusion. We are able to describe this luminescence as a hopping-assisted recombination using the correlation function approach to nondispersive transport developed by H. Scher, M. F. Shlesinger, and J. T. Bendler [Phys. Today 41, 26 (1991)]. We suggest a simple derivation of analytical functions which accurately describe the anomalous luminescence decays of disordered II-VI superlattices and of porous silicon, and show that this model includes exponential and Kohlrausch [Pogg. Ann. Phys. 119, 352 (1863)] (stretched-exponential) relaxations as special cases.

Original languageEnglish
Pages (from-to)2672-2674
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 1 Dec 1992


  • luminescence decay
  • spectral diffusion
  • porous silicon


Dive into the research topics of 'Luminescence decay in disordered low-dimensional semiconductors'. Together they form a unique fingerprint.

Cite this