Luminescence behavior of semipolar (10 11) InGaN/GaN "bow-tie" structures on patterned Si substrates

Jochen Bruckbauer, Carol Trager-Cowan, Ben Hourahine, Aimo Winkelmann, Philippe Vennéguès, Anja Ipsen, Xiang Yu, Xunming Zhao, Michael J. Wallace, Paul R. Edwards, G. Naresh-Kumar, Matthias Hocker, Sebastian Bauer, Raphael Müller, Jie Bai, Klaus Thonke, Tao Wang, Robert W. Martin

Research output: Contribution to journalArticle

2 Downloads (Pure)

Abstract

In this work, we report on the innovative growth of semipolar "bow-tie"-shaped GaN structures containing InGaN/GaN multiple quantum wells (MQWs) and their structural and luminescence characterization. We investigate the impact of growth on patterned (113) Si substrates, which results in the bow-tie cross section with upper surfaces having the (10 1 ̄ 1) orientation. Room temperature cathodoluminescence (CL) hyperspectral imaging reveals two types of extended defects: black spots appearing in intensity images of the GaN near band edge emission and dark lines running parallel in the direction of the Si stripes in MQW intensity images. Electron channeling contrast imaging (ECCI) identifies the black spots as threading dislocations propagating to the inclined (10 1 ̄ 1) surfaces. Line defects in ECCI, propagating in the [1 2 ̄ 10] direction parallel to the Si stripes, are attributed to misfit dislocations (MDs) introduced by glide in the basal (0001) planes at the interfaces of the MQW structure. Identification of these line defects as MDs within the MQWs is only possible because they are revealed as dark lines in the MQW CL intensity images, but not in the GaN intensity images. Low temperature CL spectra exhibit additional emission lines at energies below the GaN bound exciton emission line. These emission lines only appear at the edge or the center of the structures where two (0001) growth fronts meet and coalesce (join of the bow-tie). They are most likely related to basal-plane or prismatic stacking faults or partial dislocations at the GaN/Si interface and the coalescence region.

Original languageEnglish
Article number035705
Number of pages8
JournalJournal of Applied Physics
Volume127
Issue number3
DOIs
Publication statusPublished - 17 Jan 2020

Keywords

  • semi-polar
  • GaN structures
  • luminescence
  • hyperspectral imaging

Projects

Datasets

Data for: "Luminescence behaviour of semi-polar (10-11) InGaN/GaN 'bow-tie' structures on patterned Si substrates"

Bruckbauer, J. (Creator), Trager-Cowan, C. (Contributor), Hourahine, B. (Contributor), Winkelmann, A. (Contributor), Vennegues, P. (Contributor), Ipsen, A. (Contributor), Yu, X. (Contributor), Zhao, X. (Contributor), Wallace, M. (Contributor), Edwards, P. (Contributor), Gunasekar, N. (Contributor), Hocker, M. (Contributor), Bauer, S. (Contributor), Müller, R. (Contributor), Bai, J. (Contributor), Thonke, K. (Contributor), Thonke, K. (Contributor), Wang, T. (Contributor) & Martin, R. (Contributor), University of Strathclyde, 16 Dec 2019

Dataset

Equipment

ESEM Quanta 250

Robert Martin (Manager)

Physics

Facility/equipment: Equipment

  • Cite this