Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron radiation

K.P. O'Donnell, R.W. Martin, M.E. White, M.J. Tobin, J.F.W. Mosselmans, I.M. Watson, B. Damiliano, N. Grandjean

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The Daresbury synchrotron radiation source (SRS) provides bright, tunable x-rays for scattering and absorption probes of local structure. Scanning confocal microscopy and luminescence decay measurements employ the SRS in alternative ways, as a tunable luminescence excitation engine and as a source of weak, 160 ps pulses with a large pulse-topulse separation, respectively. This report first describes local atomic structure studies of InGaN epilayers by extended x-ray absorption fine structure (EXAFS). In addition, we report photoluminescence (PL) imaging, PL microspectroscopy and photoluminescence decay studies of various nitride samples, including tailored InGaN quantum wells and discs.
Original languageEnglish
Pages (from-to)G9.11
JournalMRS Online Proceedings Library
Volume639
DOIs
Publication statusPublished - 2001

    Fingerprint

Keywords

  • InGaN epilayer
  • quantum well
  • quantum dot samples
  • synchrotron radiation

Cite this