Low-voltage organic thin-film transistors based on [n]phenacenes

Afra Al Ruzaiqi, Hideki Okamoto, Yoshihiro Kubozono, Ute Zschieschang, Hagen Klauk, Peter Baran, Helena Gleskova

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Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V·s for transistors on glass and 0.092 cm2/V·s for transistors on flexible PEN.
Original languageEnglish
Pages (from-to)286-291
Number of pages6
JournalOrganic Electronics
Early online date18 Jun 2019
Publication statusPublished - 31 Oct 2019


  • organic field effect transistor (ofet)
  • phenacene
  • low-voltage operation
  • PEN substrate


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