Low-voltage organic thin-film transistors based on [n]phenacenes

Afra Al Ruzaiqi, Hideki Okamoto, Yoshihiro Kubozono, Ute Zschieschang, Hagen Klauk, Peter Baran, Helena Gleskova

Research output: Contribution to journalArticle

Abstract

Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V·s for transistors on glass and 0.092 cm2/V·s for transistors on flexible PEN.
LanguageEnglish
Pages286-291
Number of pages6
JournalOrganic Electronics
Volume73
Early online date18 Jun 2019
DOIs
Publication statusE-pub ahead of print - 18 Jun 2019

Fingerprint

Thin film transistors
low voltage
Transistors
transistors
Electric potential
thin films
Glass
Aluminum Oxide
Gate dielectrics
Substrates
glass
Monolayers
Ethylene
Aluminum
ethylene
aluminum oxides
Oxides
Acids
acids

Keywords

  • organic field effect transistor (ofet)
  • phenacene
  • low-voltage operation
  • PEN substrate

Cite this

Al Ruzaiqi, Afra ; Okamoto, Hideki ; Kubozono, Yoshihiro ; Zschieschang, Ute ; Klauk, Hagen ; Baran, Peter ; Gleskova, Helena. / Low-voltage organic thin-film transistors based on [n]phenacenes. In: Organic Electronics. 2019 ; Vol. 73. pp. 286-291.
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abstract = "Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V·s for transistors on glass and 0.092 cm2/V·s for transistors on flexible PEN.",
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Low-voltage organic thin-film transistors based on [n]phenacenes. / Al Ruzaiqi, Afra; Okamoto, Hideki; Kubozono, Yoshihiro; Zschieschang, Ute; Klauk, Hagen; Baran, Peter; Gleskova, Helena.

In: Organic Electronics, Vol. 73, 31.10.2019, p. 286-291.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-voltage organic thin-film transistors based on [n]phenacenes

AU - Al Ruzaiqi, Afra

AU - Okamoto, Hideki

AU - Kubozono, Yoshihiro

AU - Zschieschang, Ute

AU - Klauk, Hagen

AU - Baran, Peter

AU - Gleskova, Helena

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AB - Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V·s for transistors on glass and 0.092 cm2/V·s for transistors on flexible PEN.

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Al Ruzaiqi A, Okamoto H, Kubozono Y, Zschieschang U, Klauk H, Baran P et al. Low-voltage organic thin-film transistors based on [n]phenacenes. Organic Electronics. 2019 Oct 31;73:286-291. https://doi.org/10.1016/j.orgel.2019.06.021