Low resistivity contacts to p-type GaN by plasma treatment

H.W. Choi, C.W. Jeon, M.D. Dawson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A N-2-based plasma has been applied to a p-type GaN surface in order to improve contact resistivity. It has been found that the dc bias voltage of the plasma, which dictates the energies of incident ions, plays an important role in the effectiveness of the treatment. A reduction of contact resistivity has been achieved with a plasma of -75 V de bias voltage. Excessive ion energies result in a deterioration of the contacts, as a result of plasma damage. The result is supported by XPS data, where a decrease of contact resistivity is linked to a shift of the binding energy of the Ga 3d core level towards lower energies. Such a shift indicates a reduction of the surface band bending coincident with an decrease of the surface barrier height, giving rise to a decrease contact resistance.
LanguageEnglish
Pages2210-2213
Number of pages3
JournalPhysica Status Solidi C
Volume0
Issue number7
DOIs
Publication statusPublished - Oct 2003

Fingerprint

electric contacts
electrical resistivity
shift
electric potential
contact resistance
deterioration
energy
ions
binding energy
damage

Keywords

  • OHMIC contacts
  • surface-treatment
  • low-resistance
  • acceptor
  • plasma

Cite this

Choi, H.W. ; Jeon, C.W. ; Dawson, M.D. / Low resistivity contacts to p-type GaN by plasma treatment. In: Physica Status Solidi C. 2003 ; Vol. 0, No. 7. pp. 2210-2213.
@article{8532f14dc48e4967b2dae74f651ade79,
title = "Low resistivity contacts to p-type GaN by plasma treatment",
abstract = "A N-2-based plasma has been applied to a p-type GaN surface in order to improve contact resistivity. It has been found that the dc bias voltage of the plasma, which dictates the energies of incident ions, plays an important role in the effectiveness of the treatment. A reduction of contact resistivity has been achieved with a plasma of -75 V de bias voltage. Excessive ion energies result in a deterioration of the contacts, as a result of plasma damage. The result is supported by XPS data, where a decrease of contact resistivity is linked to a shift of the binding energy of the Ga 3d core level towards lower energies. Such a shift indicates a reduction of the surface band bending coincident with an decrease of the surface barrier height, giving rise to a decrease contact resistance.",
keywords = "OHMIC contacts, surface-treatment, low-resistance, acceptor, plasma",
author = "H.W. Choi and C.W. Jeon and M.D. Dawson",
year = "2003",
month = "10",
doi = "10.1002/pssc.200303275",
language = "English",
volume = "0",
pages = "2210--2213",
journal = "Physica Status Solidi C",
issn = "1862-6351",
number = "7",

}

Low resistivity contacts to p-type GaN by plasma treatment. / Choi, H.W.; Jeon, C.W.; Dawson, M.D.

In: Physica Status Solidi C, Vol. 0, No. 7, 10.2003, p. 2210-2213.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low resistivity contacts to p-type GaN by plasma treatment

AU - Choi, H.W.

AU - Jeon, C.W.

AU - Dawson, M.D.

PY - 2003/10

Y1 - 2003/10

N2 - A N-2-based plasma has been applied to a p-type GaN surface in order to improve contact resistivity. It has been found that the dc bias voltage of the plasma, which dictates the energies of incident ions, plays an important role in the effectiveness of the treatment. A reduction of contact resistivity has been achieved with a plasma of -75 V de bias voltage. Excessive ion energies result in a deterioration of the contacts, as a result of plasma damage. The result is supported by XPS data, where a decrease of contact resistivity is linked to a shift of the binding energy of the Ga 3d core level towards lower energies. Such a shift indicates a reduction of the surface band bending coincident with an decrease of the surface barrier height, giving rise to a decrease contact resistance.

AB - A N-2-based plasma has been applied to a p-type GaN surface in order to improve contact resistivity. It has been found that the dc bias voltage of the plasma, which dictates the energies of incident ions, plays an important role in the effectiveness of the treatment. A reduction of contact resistivity has been achieved with a plasma of -75 V de bias voltage. Excessive ion energies result in a deterioration of the contacts, as a result of plasma damage. The result is supported by XPS data, where a decrease of contact resistivity is linked to a shift of the binding energy of the Ga 3d core level towards lower energies. Such a shift indicates a reduction of the surface band bending coincident with an decrease of the surface barrier height, giving rise to a decrease contact resistance.

KW - OHMIC contacts

KW - surface-treatment

KW - low-resistance

KW - acceptor

KW - plasma

UR - http://dx.doi.org/10.1002/pssc.200303275

U2 - 10.1002/pssc.200303275

DO - 10.1002/pssc.200303275

M3 - Article

VL - 0

SP - 2210

EP - 2213

JO - Physica Status Solidi C

T2 - Physica Status Solidi C

JF - Physica Status Solidi C

SN - 1862-6351

IS - 7

ER -