Low-loss synthetic single-crystal diamond: Raman gain measurement and high power Raman laser at 1240 nm

Vasili G. Savitski; David Burns; Alan J. Kemp

doi:10.1109/CLEOE.2011.5942470

Low-loss synthetic single-crystal diamond: Raman gain measurement and high power Raman laser at 1240 nm

Vasili G. Savitski, David Burns, Alan J. Kemp

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

4 Citations (Scopus)

Abstract

To date, estimates of Raman gain in CVD (Chemical Vapour Deposition) diamond have been based on measurements of threshold, either for stimulated Raman scattering or of a simple Raman laser resonator. For a pump wavelength of 1 μm, the Raman gain coefficient was estimated to be > 12.5 cm/GW [1]. The high optical damage threshold and excellent thermo-optical properties of diamond make it attractive for Raman conversion in the 1.1-1.5 m spectral range. Therefore, it is important to more accurately determine the Raman gain coefficient to allow for improved Raman laser design. An alternative and more direct approach to Raman gain measurements is the pump-probe technique [2]. In this study, Raman gain in single-crystal CVD diamond is measured using this method, and a high-power continuous-wave diamond Raman laser is demonstrated.

Original language	English
Title of host publication	2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC)
Place of Publication	Piscataway, N.J.
Publisher	IEEE
Number of pages	1
ISBN (Print)	9781457705335
DOIs	https://doi.org/10.1109/CLEOE.2011.5942470
Publication status	Published - 7 Jul 2011
Event	2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 - Munich, Germany Duration: 22 May 2011 → 26 May 2011

Conference

Conference	2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
Country/Territory	Germany
City	Munich
Period	22/05/11 → 26/05/11

Keywords

diamond
gain measurement
Raman lasers
high power Raman laser

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10.1109/CLEOE.2011.5942470

Cite this

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title = "Low-loss synthetic single-crystal diamond: Raman gain measurement and high power Raman laser at 1240 nm",

abstract = "To date, estimates of Raman gain in CVD (Chemical Vapour Deposition) diamond have been based on measurements of threshold, either for stimulated Raman scattering or of a simple Raman laser resonator. For a pump wavelength of 1 μm, the Raman gain coefficient was estimated to be > 12.5 cm/GW [1]. The high optical damage threshold and excellent thermo-optical properties of diamond make it attractive for Raman conversion in the 1.1-1.5 m spectral range. Therefore, it is important to more accurately determine the Raman gain coefficient to allow for improved Raman laser design. An alternative and more direct approach to Raman gain measurements is the pump-probe technique [2]. In this study, Raman gain in single-crystal CVD diamond is measured using this method, and a high-power continuous-wave diamond Raman laser is demonstrated.",

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Savitski, VG, Burns, D & Kemp, AJ 2011, Low-loss synthetic single-crystal diamond: Raman gain measurement and high power Raman laser at 1240 nm. in 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC). IEEE, Piscataway, N.J., 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, Munich, Germany, 22/05/11. https://doi.org/10.1109/CLEOE.2011.5942470

Low-loss synthetic single-crystal diamond : Raman gain measurement and high power Raman laser at 1240 nm. / Savitski, Vasili G.; Burns, David; Kemp, Alan J.

2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC). Piscataway, N.J. : IEEE, 2011.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

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T1 - Low-loss synthetic single-crystal diamond

T2 - 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

AU - Savitski, Vasili G.

AU - Burns, David

AU - Kemp, Alan J.

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Y1 - 2011/7/7

N2 - To date, estimates of Raman gain in CVD (Chemical Vapour Deposition) diamond have been based on measurements of threshold, either for stimulated Raman scattering or of a simple Raman laser resonator. For a pump wavelength of 1 μm, the Raman gain coefficient was estimated to be > 12.5 cm/GW [1]. The high optical damage threshold and excellent thermo-optical properties of diamond make it attractive for Raman conversion in the 1.1-1.5 m spectral range. Therefore, it is important to more accurately determine the Raman gain coefficient to allow for improved Raman laser design. An alternative and more direct approach to Raman gain measurements is the pump-probe technique [2]. In this study, Raman gain in single-crystal CVD diamond is measured using this method, and a high-power continuous-wave diamond Raman laser is demonstrated.

AB - To date, estimates of Raman gain in CVD (Chemical Vapour Deposition) diamond have been based on measurements of threshold, either for stimulated Raman scattering or of a simple Raman laser resonator. For a pump wavelength of 1 μm, the Raman gain coefficient was estimated to be > 12.5 cm/GW [1]. The high optical damage threshold and excellent thermo-optical properties of diamond make it attractive for Raman conversion in the 1.1-1.5 m spectral range. Therefore, it is important to more accurately determine the Raman gain coefficient to allow for improved Raman laser design. An alternative and more direct approach to Raman gain measurements is the pump-probe technique [2]. In this study, Raman gain in single-crystal CVD diamond is measured using this method, and a high-power continuous-wave diamond Raman laser is demonstrated.

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KW - gain measurement

KW - Raman lasers

KW - high power Raman laser

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Y2 - 22 May 2011 through 26 May 2011

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Low-loss synthetic single-crystal diamond: Raman gain measurement and high power Raman laser at 1240 nm

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