Abstract
A novel low-loss, single-step-growth 1.3-µm GaInNAs saturable Bragg reflector mode-locking element has been developed. Combined radial thickness and postgrowth annealing control have permitted a tuning range of 46 nm for passive mode locking to be demonstrated from one wafer. With this structure, stabilized mode locking was obtained from quasi-cw diode-pumped Nd:YLF and Nd:YALO lasers operating at 1314 and 1342 nm, respectively, with average on-time output powers of as much as 20 W and pulse durations as low as 22 ps.
Original language | English |
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Pages (from-to) | 2124-2126 |
Number of pages | 2 |
Journal | Optics Letters |
Volume | 27 |
Issue number | 23 |
Publication status | Published - 2002 |
Keywords
- lasers
- laser optics
- semiconductors
- optics
- photonics
- quantum electronics
- applied physics