Low-energy electron-beam irradiation of GaN-based quantum well structures

U. Jahn, S. Dhar, H. Kostial, P. Waltereit, F. Scholz, I.M. Watson, K. Fujiwara

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The electronic properties of (In, Ga)N/GaN quantum wells significantly depend on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g., for cathodoluminescence (CL). For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers remains unchanged, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p–n structure is changed towards the flat-band condition during LEEBI indicating an electron-beam-induced passivation of acceptors in the p-type layer.
LanguageEnglish
Pages2223-2226
Number of pages4
JournalPhysica Status Solidi C
DOIs
Publication statusPublished - 2003

Fingerprint

quantum wells
electron beams
irradiation
energy
cathodoluminescence
optical transition
passivity
quantum efficiency
activation
dosage
electrical resistivity
electric fields
electronics

Keywords

  • electron-beam irradiation
  • irradiation
  • quantum wells
  • acceptors

Cite this

Jahn, U. ; Dhar, S. ; Kostial, H. ; Waltereit, P. ; Scholz, F. ; Watson, I.M. ; Fujiwara, K. / Low-energy electron-beam irradiation of GaN-based quantum well structures. In: Physica Status Solidi C. 2003 ; pp. 2223-2226.
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abstract = "The electronic properties of (In, Ga)N/GaN quantum wells significantly depend on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g., for cathodoluminescence (CL). For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers remains unchanged, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p–n structure is changed towards the flat-band condition during LEEBI indicating an electron-beam-induced passivation of acceptors in the p-type layer.",
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Low-energy electron-beam irradiation of GaN-based quantum well structures. / Jahn, U.; Dhar, S.; Kostial, H.; Waltereit, P.; Scholz, F.; Watson, I.M.; Fujiwara, K.

In: Physica Status Solidi C, 2003, p. 2223-2226.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-energy electron-beam irradiation of GaN-based quantum well structures

AU - Jahn, U.

AU - Dhar, S.

AU - Kostial, H.

AU - Waltereit, P.

AU - Scholz, F.

AU - Watson, I.M.

AU - Fujiwara, K.

N1 - Special Issue: 5th International Conference on Nitride Semiconductors (ICNS-5)

PY - 2003

Y1 - 2003

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AB - The electronic properties of (In, Ga)N/GaN quantum wells significantly depend on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g., for cathodoluminescence (CL). For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers remains unchanged, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p–n structure is changed towards the flat-band condition during LEEBI indicating an electron-beam-induced passivation of acceptors in the p-type layer.

KW - electron-beam irradiation

KW - irradiation

KW - quantum wells

KW - acceptors

U2 - 10.1002/pssc.200303290

DO - 10.1002/pssc.200303290

M3 - Article

SP - 2223

EP - 2226

JO - Physica Status Solidi C

T2 - Physica Status Solidi C

JF - Physica Status Solidi C

SN - 1862-6351

ER -