Low-energy electron-beam irradiation of GaN-based quantum well structures

U. Jahn, S. Dhar, H. Kostial, P. Waltereit, F. Scholz, I.M. Watson, K. Fujiwara

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The electronic properties of (In, Ga)N/GaN quantum wells significantly depend on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g., for cathodoluminescence (CL). For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers remains unchanged, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p–n structure is changed towards the flat-band condition during LEEBI indicating an electron-beam-induced passivation of acceptors in the p-type layer.
Original languageEnglish
Pages (from-to)2223-2226
Number of pages4
JournalPhysica Status Solidi C
Publication statusPublished - 2003


  • electron-beam irradiation
  • irradiation
  • quantum wells
  • acceptors

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