Abstract
| Language | English |
|---|---|
| Pages | 2223-2226 |
| Number of pages | 4 |
| Journal | Physica Status Solidi C |
| DOIs | |
| Publication status | Published - 2003 |
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Keywords
- electron-beam irradiation
- irradiation
- quantum wells
- acceptors
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Low-energy electron-beam irradiation of GaN-based quantum well structures. / Jahn, U.; Dhar, S.; Kostial, H.; Waltereit, P.; Scholz, F.; Watson, I.M.; Fujiwara, K.
In: Physica Status Solidi C, 2003, p. 2223-2226.Research output: Contribution to journal › Article
TY - JOUR
T1 - Low-energy electron-beam irradiation of GaN-based quantum well structures
AU - Jahn, U.
AU - Dhar, S.
AU - Kostial, H.
AU - Waltereit, P.
AU - Scholz, F.
AU - Watson, I.M.
AU - Fujiwara, K.
N1 - Special Issue: 5th International Conference on Nitride Semiconductors (ICNS-5)
PY - 2003
Y1 - 2003
N2 - The electronic properties of (In, Ga)N/GaN quantum wells significantly depend on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g., for cathodoluminescence (CL). For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers remains unchanged, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p–n structure is changed towards the flat-band condition during LEEBI indicating an electron-beam-induced passivation of acceptors in the p-type layer.
AB - The electronic properties of (In, Ga)N/GaN quantum wells significantly depend on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g., for cathodoluminescence (CL). For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers remains unchanged, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p–n structure is changed towards the flat-band condition during LEEBI indicating an electron-beam-induced passivation of acceptors in the p-type layer.
KW - electron-beam irradiation
KW - irradiation
KW - quantum wells
KW - acceptors
U2 - 10.1002/pssc.200303290
DO - 10.1002/pssc.200303290
M3 - Article
SP - 2223
EP - 2226
JO - Physica Status Solidi C
T2 - Physica Status Solidi C
JF - Physica Status Solidi C
SN - 1862-6351
ER -