The electronic properties of (In, Ga)N/GaN quantum wells significantly depend on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g., for cathodoluminescence (CL). For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers remains unchanged, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p–n structure is changed towards the flat-band condition during LEEBI indicating an electron-beam-induced passivation of acceptors in the p-type layer.
- electron-beam irradiation
- quantum wells
Jahn, U., Dhar, S., Kostial, H., Waltereit, P., Scholz, F., Watson, I. M., & Fujiwara, K. (2003). Low-energy electron-beam irradiation of GaN-based quantum well structures. Physica Status Solidi C, 2223-2226. https://doi.org/10.1002/pssc.200303290