Abstract
The electronic properties of (In, Ga)N/GaN quantum wells significantly depend on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g., for cathodoluminescence (CL). For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers remains unchanged, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p–n structure is changed towards the flat-band condition during LEEBI indicating an electron-beam-induced passivation of acceptors in the p-type layer.
Original language | English |
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Pages (from-to) | 2223-2226 |
Number of pages | 4 |
Journal | Physica Status Solidi C |
DOIs | |
Publication status | Published - 2003 |
Keywords
- electron-beam irradiation
- irradiation
- quantum wells
- acceptors