Low-energy argon ion beam treatment of a-Si:H/Si structure

E. Pincik, M. Jergel, K. Gmucova, Helena Gleskova, M. Kucera, J. Mullerova, M. Brunel, M. Mikula

Research output: Contribution to journalArticle

Abstract

The results of several surface-sensitive techniques applied to the investigation of ion beam-treated a-Si:H/crystalline silicon structures, such as deep-level transient spectroscopy (DLTS), photoluminescence at 6 K and room temperature, and X-ray diffraction at grazing incidence (XRDGI) are presented. Three important results follow from this contribution.
(i) Two groups of gap states with thermal activation energies of 0.71 and 0.84 eV were identified and found to be sensitive to illumination, this property exhibiting metastable character; we suppose effects similar to those observed in the porous silicon/silicon and a-Si:H/silicon structures.
(ii) Broader luminescence peaks were identified optically with the energies lying in the range of 0.7 to 0.95 eV, the most distinct one being at 0.85 eV.
(iii) X-ray reflection at 2θ∼28° has been found as the reflection suitable for tracing the structural properties of a-Si:H layer.

Fingerprint

Argon
Silicon
Ion beams
Deep level transient spectroscopy
Porous silicon
Luminescence
Structural properties
Photoluminescence
Activation energy
Lighting
Crystalline materials
X ray diffraction
X rays
Temperature

Keywords

  • defect-pool model
  • gap states
  • hydrogenated amorphous-silicon
  • x-ray reflection
  • H/Si
  • ion beam
  • a-Si

Cite this

Pincik, E., Jergel, M., Gmucova, K., Gleskova, H., Kucera, M., Mullerova, J., ... Mikula, M. (2000). Low-energy argon ion beam treatment of a-Si:H/Si structure. Applied Surface Science, 166(1-4), 61-66. https://doi.org/10.1016/S0169-4332(00)00385-8
Pincik, E. ; Jergel, M. ; Gmucova, K. ; Gleskova, Helena ; Kucera, M. ; Mullerova, J. ; Brunel, M. ; Mikula, M. / Low-energy argon ion beam treatment of a-Si:H/Si structure. In: Applied Surface Science. 2000 ; Vol. 166, No. 1-4. pp. 61-66.
@article{ce3f963ab1a046a69e24a89118448da6,
title = "Low-energy argon ion beam treatment of a-Si:H/Si structure",
abstract = "The results of several surface-sensitive techniques applied to the investigation of ion beam-treated a-Si:H/crystalline silicon structures, such as deep-level transient spectroscopy (DLTS), photoluminescence at 6 K and room temperature, and X-ray diffraction at grazing incidence (XRDGI) are presented. Three important results follow from this contribution.(i) Two groups of gap states with thermal activation energies of 0.71 and 0.84 eV were identified and found to be sensitive to illumination, this property exhibiting metastable character; we suppose effects similar to those observed in the porous silicon/silicon and a-Si:H/silicon structures.(ii) Broader luminescence peaks were identified optically with the energies lying in the range of 0.7 to 0.95 eV, the most distinct one being at 0.85 eV.(iii) X-ray reflection at 2θ∼28° has been found as the reflection suitable for tracing the structural properties of a-Si:H layer.",
keywords = "defect-pool model, gap states, hydrogenated amorphous-silicon, x-ray reflection, H/Si, ion beam, a-Si",
author = "E. Pincik and M. Jergel and K. Gmucova and Helena Gleskova and M. Kucera and J. Mullerova and M. Brunel and M. Mikula",
year = "2000",
month = "10",
day = "9",
doi = "10.1016/S0169-4332(00)00385-8",
language = "English",
volume = "166",
pages = "61--66",
journal = "Applied Surface Science",
issn = "0169-4332",
number = "1-4",

}

Pincik, E, Jergel, M, Gmucova, K, Gleskova, H, Kucera, M, Mullerova, J, Brunel, M & Mikula, M 2000, 'Low-energy argon ion beam treatment of a-Si:H/Si structure' Applied Surface Science, vol. 166, no. 1-4, pp. 61-66. https://doi.org/10.1016/S0169-4332(00)00385-8

Low-energy argon ion beam treatment of a-Si:H/Si structure. / Pincik, E. ; Jergel, M. ; Gmucova, K.; Gleskova, Helena; Kucera, M. ; Mullerova, J.; Brunel, M.; Mikula, M.

In: Applied Surface Science, Vol. 166, No. 1-4, 09.10.2000, p. 61-66.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-energy argon ion beam treatment of a-Si:H/Si structure

AU - Pincik, E.

AU - Jergel, M.

AU - Gmucova, K.

AU - Gleskova, Helena

AU - Kucera, M.

AU - Mullerova, J.

AU - Brunel, M.

AU - Mikula, M.

PY - 2000/10/9

Y1 - 2000/10/9

N2 - The results of several surface-sensitive techniques applied to the investigation of ion beam-treated a-Si:H/crystalline silicon structures, such as deep-level transient spectroscopy (DLTS), photoluminescence at 6 K and room temperature, and X-ray diffraction at grazing incidence (XRDGI) are presented. Three important results follow from this contribution.(i) Two groups of gap states with thermal activation energies of 0.71 and 0.84 eV were identified and found to be sensitive to illumination, this property exhibiting metastable character; we suppose effects similar to those observed in the porous silicon/silicon and a-Si:H/silicon structures.(ii) Broader luminescence peaks were identified optically with the energies lying in the range of 0.7 to 0.95 eV, the most distinct one being at 0.85 eV.(iii) X-ray reflection at 2θ∼28° has been found as the reflection suitable for tracing the structural properties of a-Si:H layer.

AB - The results of several surface-sensitive techniques applied to the investigation of ion beam-treated a-Si:H/crystalline silicon structures, such as deep-level transient spectroscopy (DLTS), photoluminescence at 6 K and room temperature, and X-ray diffraction at grazing incidence (XRDGI) are presented. Three important results follow from this contribution.(i) Two groups of gap states with thermal activation energies of 0.71 and 0.84 eV were identified and found to be sensitive to illumination, this property exhibiting metastable character; we suppose effects similar to those observed in the porous silicon/silicon and a-Si:H/silicon structures.(ii) Broader luminescence peaks were identified optically with the energies lying in the range of 0.7 to 0.95 eV, the most distinct one being at 0.85 eV.(iii) X-ray reflection at 2θ∼28° has been found as the reflection suitable for tracing the structural properties of a-Si:H layer.

KW - defect-pool model

KW - gap states

KW - hydrogenated amorphous-silicon

KW - x-ray reflection

KW - H/Si

KW - ion beam

KW - a-Si

U2 - 10.1016/S0169-4332(00)00385-8

DO - 10.1016/S0169-4332(00)00385-8

M3 - Article

VL - 166

SP - 61

EP - 66

JO - Applied Surface Science

T2 - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -