Low-energy argon ion beam treatment of a-Si:H/Si structure

E. Pincik, M. Jergel, K. Gmucova, Helena Gleskova, M. Kucera, J. Mullerova, M. Brunel, M. Mikula

Research output: Contribution to journalArticlepeer-review


The results of several surface-sensitive techniques applied to the investigation of ion beam-treated a-Si:H/crystalline silicon structures, such as deep-level transient spectroscopy (DLTS), photoluminescence at 6 K and room temperature, and X-ray diffraction at grazing incidence (XRDGI) are presented. Three important results follow from this contribution.
(i) Two groups of gap states with thermal activation energies of 0.71 and 0.84 eV were identified and found to be sensitive to illumination, this property exhibiting metastable character; we suppose effects similar to those observed in the porous silicon/silicon and a-Si:H/silicon structures.
(ii) Broader luminescence peaks were identified optically with the energies lying in the range of 0.7 to 0.95 eV, the most distinct one being at 0.85 eV.
(iii) X-ray reflection at 2θ∼28° has been found as the reflection suitable for tracing the structural properties of a-Si:H layer.
Original languageEnglish
Pages (from-to)61-66
Number of pages6
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 9 Oct 2000
Event7th International Conference on the Formation of Semiconductor Interfaces (ICFSI-7) - Gothenburg, Sweden
Duration: 21 Jun 199925 Jun 1999


  • defect-pool model
  • gap states
  • hydrogenated amorphous-silicon
  • x-ray reflection
  • H/Si
  • ion beam
  • a-Si

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