Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers

A.H. Clark, S. Calvez, N. Laurand, R. Macaluso, H.D. Sun, M.D. Dawson, T. Jouhti, J. Kontinnen, M. Pessa

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We report on the continuous-wave amplification characteristics of an optically pumped 1.3-/spl mu/m multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported.
Original languageEnglish
Pages (from-to)878 -883
JournalIEEE Journal of Quantum Electronics
Volume40
Issue number7
Publication statusPublished - Jul 2004

Keywords

  • long-wavelength
  • monolithic GaInNAs
  • vertical-cavity optical amplifiers
  • bandwidth
  • optical bandwidth

Fingerprint Dive into the research topics of 'Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers'. Together they form a unique fingerprint.

  • Cite this

    Clark, A. H., Calvez, S., Laurand, N., Macaluso, R., Sun, H. D., Dawson, M. D., ... Pessa, M. (2004). Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers. IEEE Journal of Quantum Electronics, 40(7), 878 -883.