We report on the continuous-wave amplification characteristics of an optically pumped 1.3-/spl mu/m multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported.
|Pages (from-to)||878 -883|
|Journal||IEEE Journal of Quantum Electronics|
|Publication status||Published - Jul 2004|
- monolithic GaInNAs
- vertical-cavity optical amplifiers
- optical bandwidth
Clark, A. H., Calvez, S., Laurand, N., Macaluso, R., Sun, H. D., Dawson, M. D., ... Pessa, M. (2004). Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers. IEEE Journal of Quantum Electronics, 40(7), 878 -883.