Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers

A.H. Clark, S. Calvez, N. Laurand, R. Macaluso, H.D. Sun, M.D. Dawson, T. Jouhti, J. Kontinnen, M. Pessa

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We report on the continuous-wave amplification characteristics of an optically pumped 1.3-/spl mu/m multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported.
LanguageEnglish
Pages878 -883
JournalIEEE Journal of Quantum Electronics
Volume40
Issue number7
Publication statusPublished - Jul 2004

Fingerprint

Light amplifiers
Semiconductor optical amplifiers
light amplifiers
chips
Pumps
Bandwidth
Optical fiber coupling
Wavelength
cavities
Lasers
Molecular beam epitaxy
wavelengths
pumps
Semiconductor quantum wells
wave amplification
bandwidth
Amplification
Demonstrations
continuous radiation
lasers

Keywords

  • long-wavelength
  • monolithic GaInNAs
  • vertical-cavity optical amplifiers
  • bandwidth
  • optical bandwidth

Cite this

Clark, A. H., Calvez, S., Laurand, N., Macaluso, R., Sun, H. D., Dawson, M. D., ... Pessa, M. (2004). Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers. IEEE Journal of Quantum Electronics, 40(7), 878 -883.
Clark, A.H. ; Calvez, S. ; Laurand, N. ; Macaluso, R. ; Sun, H.D. ; Dawson, M.D. ; Jouhti, T. ; Kontinnen, J. ; Pessa, M. / Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers. In: IEEE Journal of Quantum Electronics. 2004 ; Vol. 40, No. 7. pp. 878 -883.
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Clark, AH, Calvez, S, Laurand, N, Macaluso, R, Sun, HD, Dawson, MD, Jouhti, T, Kontinnen, J & Pessa, M 2004, 'Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers' IEEE Journal of Quantum Electronics, vol. 40, no. 7, pp. 878 -883.

Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers. / Clark, A.H.; Calvez, S.; Laurand, N.; Macaluso, R.; Sun, H.D.; Dawson, M.D.; Jouhti, T.; Kontinnen, J.; Pessa, M.

In: IEEE Journal of Quantum Electronics, Vol. 40, No. 7, 07.2004, p. 878 -883.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers

AU - Clark, A.H.

AU - Calvez, S.

AU - Laurand, N.

AU - Macaluso, R.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Kontinnen, J.

AU - Pessa, M.

PY - 2004/7

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N2 - We report on the continuous-wave amplification characteristics of an optically pumped 1.3-/spl mu/m multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported.

AB - We report on the continuous-wave amplification characteristics of an optically pumped 1.3-/spl mu/m multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported.

KW - long-wavelength

KW - monolithic GaInNAs

KW - vertical-cavity optical amplifiers

KW - bandwidth

KW - optical bandwidth

UR - http://dx.doi.org/10.1109/JQE.2004.830201

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