Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

T. Ferrus; A. Rossi; W. Lin; D. A. Williams; T. Kodera; S. Oda

doi:10.1063/1.4707165

Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

T. Ferrus, A. Rossi, W. Lin, D. A. Williams, T. Kodera, S. Oda

Physics

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

We have observed a negative differential conductance with singular gate and sourcedrain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed. © 2012 Author(s).

Original language	English
Article number	022114-1
Number of pages	9
Journal	AIP Advances
Volume	2
Issue number	2
DOIs	https://doi.org/10.1063/1.4707165
Publication status	Published - 1 Dec 2012

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Keywords

quantum dots
semiconductor quantum dots
spin blockade
bias dependence

Cite this

Ferrus, T., Rossi, A., Lin, W., Williams, D. A., Kodera, T., & Oda, S. (2012). Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots. AIP Advances, 2(2), [022114-1]. https://doi.org/10.1063/1.4707165

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10.1063/1.4707165

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