Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

T. Ferrus, A. Rossi, W. Lin, D. A. Williams, T. Kodera, S. Oda

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Abstract

We have observed a negative differential conductance with singular gate and sourcedrain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed. © 2012 Author(s).

Original languageEnglish
Article number022114-1
Number of pages9
JournalAIP Advances
Volume2
Issue number2
DOIs
Publication statusPublished - 1 Dec 2012

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Keywords

  • quantum dots
  • semiconductor quantum dots
  • spin blockade
  • bias dependence

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