Abstract
We have observed a negative differential conductance with singular gate and sourcedrain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed. © 2012 Author(s).
Original language | English |
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Article number | 022114-1 |
Number of pages | 9 |
Journal | AIP Advances |
Volume | 2 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Dec 2012 |
Keywords
- quantum dots
- semiconductor quantum dots
- spin blockade
- bias dependence