Abstract
Using a synchrotron source, extended X-Ray Absorption Fine Structure (EXAFS) measurements were performed at the Ga and In K-edges of a range of (In,Ga)N samples, grown either by MBE or MOCVD. The resulting determinations of local alloy structure, complemented in selected cases by asymmetric x-ray diffraction reciprocal space mapping (XRD-RSM), show an inequality in the "mixed cation" separations, Ga-In and In-Ga, for samples with InN content less than about 50%. This asymmetry, which increases wit decreasing InN content of the layers, is related to the high luminescence efficiency of the materials through a combination of percolation and localization of excitation on the GaN and InN sub-lattices, respectively.
| Original language | English |
|---|---|
| Title of host publication | Advances in III-V Nitride Semiconductor Materials and Devices |
| Place of Publication | Warrendale, Pennsylvania |
| Pages | 408-410 |
| Number of pages | 3 |
| Volume | 955 |
| Publication status | Published - 1 Dec 2006 |
| Event | 2006 MRS Fall Meeting - Boston, MA, United States Duration: 27 Nov 2006 → 1 Dec 2006 |
Conference
| Conference | 2006 MRS Fall Meeting |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 27/11/06 → 1/12/06 |
Fingerprint
Keywords
- InGaN epilayer
- quantum wells
Cite this
O'Donnell, K. P. (2006). Localisation of excitation in InGaN epilayers and quantum wells. In Advances in III-V Nitride Semiconductor Materials and Devices (Vol. 955, pp. 408-410). Warrendale, Pennsylvania.