Localisation of excitation in InGaN epilayers and quantum wells

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Abstract

Using a synchrotron source, extended X-Ray Absorption Fine Structure (EXAFS) measurements were performed at the Ga and In K-edges of a range of (In,Ga)N samples, grown either by MBE or MOCVD. The resulting determinations of local alloy structure, complemented in selected cases by asymmetric x-ray diffraction reciprocal space mapping (XRD-RSM), show an inequality in the "mixed cation" separations, Ga-In and In-Ga, for samples with InN content less than about 50%. This asymmetry, which increases wit decreasing InN content of the layers, is related to the high luminescence efficiency of the materials through a combination of percolation and localization of excitation on the GaN and InN sub-lattices, respectively.

Original languageEnglish
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
Place of PublicationWarrendale, Pennsylvania
Pages408-410
Number of pages3
Volume955
Publication statusPublished - 1 Dec 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 27 Nov 20061 Dec 2006

Conference

Conference2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period27/11/061/12/06

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Keywords

  • InGaN epilayer
  • quantum wells

Cite this

O'Donnell, K. P. (2006). Localisation of excitation in InGaN epilayers and quantum wells. In Advances in III-V Nitride Semiconductor Materials and Devices (Vol. 955, pp. 408-410). Warrendale, Pennsylvania.