Local structure of luminescent InGaN alloys

V. Kachkanov, K. P. O'Donnell, R. W. Martin, J. F. W. Mosselmans, S. Pereira

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 <x <0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices.
LanguageEnglish
Article number101908
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number10
DOIs
Publication statusPublished - 4 Sep 2006

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x ray absorption
fine structure
radiative recombination
breakdown
luminescence

Keywords

  • luminescence
  • absorption
  • InGaN alloys

Cite this

Kachkanov, V. ; O'Donnell, K. P. ; Martin, R. W. ; Mosselmans, J. F. W. ; Pereira, S. / Local structure of luminescent InGaN alloys. In: Applied Physics Letters. 2006 ; Vol. 89, No. 10.
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Local structure of luminescent InGaN alloys. / Kachkanov, V.; O'Donnell, K. P.; Martin, R. W.; Mosselmans, J. F. W.; Pereira, S.

In: Applied Physics Letters, Vol. 89, No. 10, 101908, 04.09.2006.

Research output: Contribution to journalArticle

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T1 - Local structure of luminescent InGaN alloys

AU - Kachkanov, V.

AU - O'Donnell, K. P.

AU - Martin, R. W.

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AU - Pereira, S.

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AB - Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 <x <0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices.

KW - luminescence

KW - absorption

KW - InGaN alloys

U2 - 10.1063/1.2346172

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