Local structure of luminescent InGaN alloys

V. Kachkanov; K. P. O'Donnell; R. W. Martin; J. F. W. Mosselmans; S. Pereira

doi:10.1063/1.2346172

Local structure of luminescent InGaN alloys

V. Kachkanov, K. P. O'Donnell, R. W. Martin, J. F. W. Mosselmans, S. Pereira

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 <x <0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices.

Original language	English
Article number	101908
Number of pages	3
Journal	Applied Physics Letters
Volume	89
Issue number	10
DOIs	https://doi.org/10.1063/1.2346172
Publication status	Published - 4 Sep 2006

Keywords

luminescence
absorption
InGaN alloys

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10.1063/1.2346172

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@article{154fd3ab538e426ea22fa72523b67685,

title = "Local structure of luminescent InGaN alloys",

abstract = "Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 <x <0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices.",

keywords = "luminescence, absorption, InGaN alloys",

author = "V. Kachkanov and O'Donnell, {K. P.} and Martin, {R. W.} and Mosselmans, {J. F. W.} and S. Pereira",

year = "2006",

month = sep,

day = "4",

doi = "10.1063/1.2346172",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "10",

}

TY - JOUR

T1 - Local structure of luminescent InGaN alloys

AU - Kachkanov, V.

AU - O'Donnell, K. P.

AU - Martin, R. W.

AU - Mosselmans, J. F. W.

AU - Pereira, S.

PY - 2006/9/4

Y1 - 2006/9/4

N2 - Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 <x <0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices.

AB - Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 <x <0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices.

KW - luminescence

KW - absorption

KW - InGaN alloys

U2 - 10.1063/1.2346172

DO - 10.1063/1.2346172

M3 - Article

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 101908

ER -

Local structure of luminescent InGaN alloys

Abstract

Keywords

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