Local structure of luminescent InGaN alloys

V. Kachkanov, K. P. O'Donnell, R. W. Martin, J. F. W. Mosselmans, S. Pereira

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Abstract

Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 <x <0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices.
Original languageEnglish
Article number101908
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number10
DOIs
Publication statusPublished - 4 Sep 2006

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Keywords

  • luminescence
  • absorption
  • InGaN alloys

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