Light-induced D diffusion measurements in hydrogenated amorphous silicon: testing H metastability models

Howard M. Branz, Sally Asher, Helena Gleskova, Sigurd Wagner

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

We measure light-induced D tracer diffusion in hydrogenated amorphous silicon samples under conditions at which thermal diffusion is negligible. Under high-intensity (9 W cm-2), red-light soaking at 135°C, the D diffusion coefficient is DD= 1.3×10-18 cm2 s-1 and the rate of D emission from Si-D to transport is 3.5 × 10-5 s-1. We also find an upper bound of DD=3×10-20 cm2 s-1, the light-induced diffusion coefficient at 65°C. Previous experiments had revealed only "light-enhanced" diffusion between from 200 to 300°C, a regime in which thermal diffusion is also significant. Our 135°C result extends the range of the 0.9-eV activation energy for this diffusion; our 65°C upper bound is consistent with the extrapolation of the higher temperature data. We also measure metastable defect creation at 65 and 135°C to test models of light-induced metastability that involve emission of H from Si-H bonds to an H transport level. This class of models can be limited, but not excluded, by our data. The H emission parameter of the H collision model of metastability is also estimated. 

LanguageEnglish
Pages5513-5520
Number of pages8
JournalPhysical Review B (Condensed Matter)
Volume59
Issue number8
DOIs
Publication statusPublished - 1999

Fingerprint

Amorphous silicon
metastable state
amorphous silicon
Testing
Thermal diffusion
thermal diffusion
diffusion coefficient
soaking
Extrapolation
tracers
extrapolation
Activation energy
activation energy
Defects
collisions
defects
Experiments
Temperature

Keywords

  • hydrogenated amorphous silicon
  • metastability models
  • metastability

Cite this

@article{34816a525f9b41e7bf539329b6c9e8d9,
title = "Light-induced D diffusion measurements in hydrogenated amorphous silicon: testing H metastability models",
abstract = "We measure light-induced D tracer diffusion in hydrogenated amorphous silicon samples under conditions at which thermal diffusion is negligible. Under high-intensity (9 W cm-2), red-light soaking at 135°C, the D diffusion coefficient is DD= 1.3×10-18 cm2 s-1 and the rate of D emission from Si-D to transport is 3.5 × 10-5 s-1. We also find an upper bound of DD=3×10-20 cm2 s-1, the light-induced diffusion coefficient at 65°C. Previous experiments had revealed only {"}light-enhanced{"} diffusion between from 200 to 300°C, a regime in which thermal diffusion is also significant. Our 135°C result extends the range of the 0.9-eV activation energy for this diffusion; our 65°C upper bound is consistent with the extrapolation of the higher temperature data. We also measure metastable defect creation at 65 and 135°C to test models of light-induced metastability that involve emission of H from Si-H bonds to an H transport level. This class of models can be limited, but not excluded, by our data. The H emission parameter of the H collision model of metastability is also estimated. ",
keywords = "hydrogenated amorphous silicon , metastability models , metastability",
author = "Branz, {Howard M.} and Sally Asher and Helena Gleskova and Sigurd Wagner",
year = "1999",
doi = "10.1103/PhysRevB.59.5513",
language = "English",
volume = "59",
pages = "5513--5520",
journal = "Physical Review B (Condensed Matter)",
issn = "0163-1829",
number = "8",

}

Light-induced D diffusion measurements in hydrogenated amorphous silicon : testing H metastability models. / Branz, Howard M.; Asher, Sally; Gleskova, Helena; Wagner, Sigurd.

In: Physical Review B (Condensed Matter), Vol. 59, No. 8, 1999, p. 5513-5520.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Light-induced D diffusion measurements in hydrogenated amorphous silicon

T2 - Physical Review B (Condensed Matter)

AU - Branz, Howard M.

AU - Asher, Sally

AU - Gleskova, Helena

AU - Wagner, Sigurd

PY - 1999

Y1 - 1999

N2 - We measure light-induced D tracer diffusion in hydrogenated amorphous silicon samples under conditions at which thermal diffusion is negligible. Under high-intensity (9 W cm-2), red-light soaking at 135°C, the D diffusion coefficient is DD= 1.3×10-18 cm2 s-1 and the rate of D emission from Si-D to transport is 3.5 × 10-5 s-1. We also find an upper bound of DD=3×10-20 cm2 s-1, the light-induced diffusion coefficient at 65°C. Previous experiments had revealed only "light-enhanced" diffusion between from 200 to 300°C, a regime in which thermal diffusion is also significant. Our 135°C result extends the range of the 0.9-eV activation energy for this diffusion; our 65°C upper bound is consistent with the extrapolation of the higher temperature data. We also measure metastable defect creation at 65 and 135°C to test models of light-induced metastability that involve emission of H from Si-H bonds to an H transport level. This class of models can be limited, but not excluded, by our data. The H emission parameter of the H collision model of metastability is also estimated. 

AB - We measure light-induced D tracer diffusion in hydrogenated amorphous silicon samples under conditions at which thermal diffusion is negligible. Under high-intensity (9 W cm-2), red-light soaking at 135°C, the D diffusion coefficient is DD= 1.3×10-18 cm2 s-1 and the rate of D emission from Si-D to transport is 3.5 × 10-5 s-1. We also find an upper bound of DD=3×10-20 cm2 s-1, the light-induced diffusion coefficient at 65°C. Previous experiments had revealed only "light-enhanced" diffusion between from 200 to 300°C, a regime in which thermal diffusion is also significant. Our 135°C result extends the range of the 0.9-eV activation energy for this diffusion; our 65°C upper bound is consistent with the extrapolation of the higher temperature data. We also measure metastable defect creation at 65 and 135°C to test models of light-induced metastability that involve emission of H from Si-H bonds to an H transport level. This class of models can be limited, but not excluded, by our data. The H emission parameter of the H collision model of metastability is also estimated. 

KW - hydrogenated amorphous silicon

KW - metastability models

KW - metastability

UR - http://www.scopus.com/inward/record.url?scp=0000059669&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.59.5513

DO - 10.1103/PhysRevB.59.5513

M3 - Article

VL - 59

SP - 5513

EP - 5520

JO - Physical Review B (Condensed Matter)

JF - Physical Review B (Condensed Matter)

SN - 0163-1829

IS - 8

ER -