Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells

R.W. Martin, P.R. Edwards, R. Pecharroman-Gallego, C. Liu, C.J. Deatcher, I.M. Watson, K.P. O'Donnell

Research output: Contribution to journalArticle

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Abstract

In this paper, we describe the growth and characterization of InGaN single quantum wells with emission peaks in the blue, green, amber and red spectral regions, grown by metal-organic vapour phase epitaxy. Starting from the growth of a blue-emitting (peak ~430 nm) InGaN quantum well at 860°C the InGaN growth temperature was progressively reduced. The photoluminescence peak wavelength, measured at low temperature, shifts through the green and orange spectral regions and reaches 670 nm for an InGaN growth temperature of 760°C. This corresponds to an energy lower than the currently accepted band-gap of the binary compound, InN. Spectral characteristics of the luminescence peaks will be discussed, including an analysis of the phonon-assisted contribution. Low energy secondary ion mass spectrometry analysis provides information on the indium content and thickness of the 'blue' and 'red' quantum wells. The results are combined to discuss the origin of the 'sub-band-gap' luminescence in terms of the combined influence of InN-GaN segregation and the effect of intense piezoelectric fields
LanguageEnglish
Pages604-608
Number of pages4
JournalJournal of Physics D: Applied Physics
Volume35
Issue number7
DOIs
Publication statusPublished - 7 Apr 2002

Fingerprint

Light emission
Semiconductor quantum wells
light emission
quantum wells
Growth temperature
Luminescence
Energy gap
Amber
Information analysis
Indium
Vapor phase epitaxy
luminescence
information analysis
Secondary ion mass spectrometry
Photoluminescence
Metals
vapor phase epitaxy
secondary ion mass spectrometry
indium
Wavelength

Keywords

  • condensed matter
  • electrical
  • magnetic and optical
  • Semiconductors
  • surfaces
  • interfaces
  • thin films
  • nanoscale science and low-D systems

Cite this

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title = "Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells",
abstract = "In this paper, we describe the growth and characterization of InGaN single quantum wells with emission peaks in the blue, green, amber and red spectral regions, grown by metal-organic vapour phase epitaxy. Starting from the growth of a blue-emitting (peak ~430 nm) InGaN quantum well at 860°C the InGaN growth temperature was progressively reduced. The photoluminescence peak wavelength, measured at low temperature, shifts through the green and orange spectral regions and reaches 670 nm for an InGaN growth temperature of 760°C. This corresponds to an energy lower than the currently accepted band-gap of the binary compound, InN. Spectral characteristics of the luminescence peaks will be discussed, including an analysis of the phonon-assisted contribution. Low energy secondary ion mass spectrometry analysis provides information on the indium content and thickness of the 'blue' and 'red' quantum wells. The results are combined to discuss the origin of the 'sub-band-gap' luminescence in terms of the combined influence of InN-GaN segregation and the effect of intense piezoelectric fields",
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Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells. / Martin, R.W.; Edwards, P.R.; Pecharroman-Gallego, R.; Liu, C.; Deatcher, C.J.; Watson, I.M.; O'Donnell, K.P.

In: Journal of Physics D: Applied Physics, Vol. 35, No. 7, 07.04.2002, p. 604-608.

Research output: Contribution to journalArticle

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T1 - Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells

AU - Martin, R.W.

AU - Edwards, P.R.

AU - Pecharroman-Gallego, R.

AU - Liu, C.

AU - Deatcher, C.J.

AU - Watson, I.M.

AU - O'Donnell, K.P.

PY - 2002/4/7

Y1 - 2002/4/7

N2 - In this paper, we describe the growth and characterization of InGaN single quantum wells with emission peaks in the blue, green, amber and red spectral regions, grown by metal-organic vapour phase epitaxy. Starting from the growth of a blue-emitting (peak ~430 nm) InGaN quantum well at 860°C the InGaN growth temperature was progressively reduced. The photoluminescence peak wavelength, measured at low temperature, shifts through the green and orange spectral regions and reaches 670 nm for an InGaN growth temperature of 760°C. This corresponds to an energy lower than the currently accepted band-gap of the binary compound, InN. Spectral characteristics of the luminescence peaks will be discussed, including an analysis of the phonon-assisted contribution. Low energy secondary ion mass spectrometry analysis provides information on the indium content and thickness of the 'blue' and 'red' quantum wells. The results are combined to discuss the origin of the 'sub-band-gap' luminescence in terms of the combined influence of InN-GaN segregation and the effect of intense piezoelectric fields

AB - In this paper, we describe the growth and characterization of InGaN single quantum wells with emission peaks in the blue, green, amber and red spectral regions, grown by metal-organic vapour phase epitaxy. Starting from the growth of a blue-emitting (peak ~430 nm) InGaN quantum well at 860°C the InGaN growth temperature was progressively reduced. The photoluminescence peak wavelength, measured at low temperature, shifts through the green and orange spectral regions and reaches 670 nm for an InGaN growth temperature of 760°C. This corresponds to an energy lower than the currently accepted band-gap of the binary compound, InN. Spectral characteristics of the luminescence peaks will be discussed, including an analysis of the phonon-assisted contribution. Low energy secondary ion mass spectrometry analysis provides information on the indium content and thickness of the 'blue' and 'red' quantum wells. The results are combined to discuss the origin of the 'sub-band-gap' luminescence in terms of the combined influence of InN-GaN segregation and the effect of intense piezoelectric fields

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KW - surfaces

KW - interfaces

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