Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

Chaowang Liu, Alexander Satka, L.K. Jagadamma, P.R. Edwards, D. Allsopp, R.W. Martin, Philip Shields, Jaroslav Kovac, Frantisek Uherek, Wang Wang

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

InxGa1-xN/GaN quantum wells have been grown on the {1011} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips.
Original languageEnglish
Pages (from-to)121002
JournalApplied Physics Express
Volume2
DOIs
Publication statusPublished - 4 Dec 2009

Keywords

  • light emission
  • luminescence
  • quantum wells
  • cathodoluminescence

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