Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

Chaowang Liu; Alexander Satka; L.K. Jagadamma; P.R. Edwards; D. Allsopp; R.W. Martin; Philip Shields; Jaroslav Kovac; Frantisek Uherek; Wang Wang

doi:10.1143/APEX.2.121002

Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

Chaowang Liu, Alexander Satka, L.K. Jagadamma, P.R. Edwards, D. Allsopp, R.W. Martin, Philip Shields, Jaroslav Kovac, Frantisek Uherek, Wang Wang

Research output: Contribution to journal › Article › peer-review

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Abstract

InxGa1-xN/GaN quantum wells have been grown on the {1011} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips.

Original language	English
Pages (from-to)	121002
Journal	Applied Physics Express
Volume	2
DOIs	https://doi.org/10.1143/APEX.2.121002
Publication status	Published - 4 Dec 2009

Keywords

light emission
luminescence
quantum wells
cathodoluminescence

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10.1143/APEX.2.121002

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title = "Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting",

abstract = "InxGa1-xN/GaN quantum wells have been grown on the {1011} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips.",

keywords = "light emission, luminescence , quantum wells, cathodoluminescence",

author = "Chaowang Liu and Alexander Satka and L.K. Jagadamma and P.R. Edwards and D. Allsopp and R.W. Martin and Philip Shields and Jaroslav Kovac and Frantisek Uherek and Wang Wang",

year = "2009",

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doi = "10.1143/APEX.2.121002",

language = "English",

volume = "2",

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TY - JOUR

T1 - Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

AU - Liu, Chaowang

AU - Satka, Alexander

AU - Jagadamma, L.K.

AU - Edwards, P.R.

AU - Allsopp, D.

AU - Martin, R.W.

AU - Shields, Philip

AU - Kovac, Jaroslav

AU - Uherek, Frantisek

AU - Wang, Wang

PY - 2009/12/4

Y1 - 2009/12/4

N2 - InxGa1-xN/GaN quantum wells have been grown on the {1011} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips.

AB - InxGa1-xN/GaN quantum wells have been grown on the {1011} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips.

KW - light emission

KW - luminescence

KW - quantum wells

KW - cathodoluminescence

UR - http://apex.ipap.jp/link?APEX/2/121002/

U2 - 10.1143/APEX.2.121002

DO - 10.1143/APEX.2.121002

M3 - Article

SN - 1882-0778

VL - 2

SP - 121002

JO - Applied Physics Express

JF - Applied Physics Express

ER -

Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

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