Layout Optimization of Integrated Trench VDMOS Arrays

Terry Dyer; Andrew Strachan

Layout Optimization of Integrated Trench VDMOS Arrays

Terry Dyer (Inventor), Andrew Strachan (Inventor)

Physics

Research output: Patent

Abstract

An economical integration of trench VDMOS devices into a conventional BCD process is provided, with the optimization of key aspects of the device layout for low Rds(on) area. Specifically, trench orientation, array geometry, the number of source cells between drain pickups and drain-source spacing are independently optimized. In one embodiment of the invention, the optimized device utilizes a rectangular cell array with an elongation ratio in the range of 5/3-7/3, with a ratio of 5/3 being preferred, and a cell orientation at 45° with respect to the wafer flat on a 100 wafer.

Original language	English
Patent number	US patent 7,071,513
IPC	H01L21/8249
Priority date	28/05/04
Publication status	Published - 4 Jul 2006

Keywords

CMOS circuits
DMOS circuits
crystalline silicon

Cite this

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title = "Layout Optimization of Integrated Trench VDMOS Arrays",

abstract = "An economical integration of trench VDMOS devices into a conventional BCD process is provided, with the optimization of key aspects of the device layout for low Rds(on) area. Specifically, trench orientation, array geometry, the number of source cells between drain pickups and drain-source spacing are independently optimized. In one embodiment of the invention, the optimized device utilizes a rectangular cell array with an elongation ratio in the range of 5/3-7/3, with a ratio of 5/3 being preferred, and a cell orientation at 45° with respect to the wafer flat on a 100 wafer. ",

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author = "Terry Dyer and Andrew Strachan",

year = "2006",

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TY - PAT

T1 - Layout Optimization of Integrated Trench VDMOS Arrays

AU - Dyer, Terry

AU - Strachan, Andrew

PY - 2006/7/4

Y1 - 2006/7/4

N2 - An economical integration of trench VDMOS devices into a conventional BCD process is provided, with the optimization of key aspects of the device layout for low Rds(on) area. Specifically, trench orientation, array geometry, the number of source cells between drain pickups and drain-source spacing are independently optimized. In one embodiment of the invention, the optimized device utilizes a rectangular cell array with an elongation ratio in the range of 5/3-7/3, with a ratio of 5/3 being preferred, and a cell orientation at 45° with respect to the wafer flat on a 100 wafer.

AB - An economical integration of trench VDMOS devices into a conventional BCD process is provided, with the optimization of key aspects of the device layout for low Rds(on) area. Specifically, trench orientation, array geometry, the number of source cells between drain pickups and drain-source spacing are independently optimized. In one embodiment of the invention, the optimized device utilizes a rectangular cell array with an elongation ratio in the range of 5/3-7/3, with a ratio of 5/3 being preferred, and a cell orientation at 45° with respect to the wafer flat on a 100 wafer.

KW - CMOS circuits

KW - DMOS circuits

KW - crystalline silicon

UR - https://patents.google.com/patent/US7071513

M3 - Patent

M1 - US patent 7,071,513

ER -

Layout Optimization of Integrated Trench VDMOS Arrays

Abstract

Keywords

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