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Lattice site location of optical centers in GaN: Eu light emitting diode material grown by organometallic vapor phase epitaxy
K. Lorenz, E. Alves, I. S. Roqan, K. P. O'Donnell, A. Nishikawa, Y. Fujiwara, M. Bockowski
Research output: Contribution to journal › Article › peer-review
33
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(Scopus)