Lattice order in thulium-doped GaN epilayers

in situ doping versus ion implantation

S Hernandez, R Cusco, L Artus, E Nogales, R W Martin, K P O'Donnell, G Halambalakis, O Briot, K Lorenz, E Alves

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have investigated the crystalline quality of thulium-doped GaN obtained either by in situ doping during MBE growth or by ion-beam implantation of MOCVD GaN layers. Both types of samples display the typical sharp intra-4f shell emission lines of Tm3+ ions in the blue and infrared spectral regions. The Raman spectra of the MBE samples indicate a good crystalline quality, showing the narrow E-2 and A(1) phonon peaks characteristic of GaN, even for the highest Tin concentrations. In contrast, Raman peaks associated with vacancy-related defects, as well as low-frequency bands due to disorder-activated modes can be observed in the Raman spectra of the implanted samples. These results indicate that, for the implantation doses required to achieve Tm emission, some residual disorder remains in the implanted GaN layers which is not observed in Tm-doped MBE samples with higher Tm concentration.
Original languageEnglish
Pages (from-to)771-774
Number of pages4
JournalOptical Materials
Volume28
Issue number6-7
DOIs
Publication statusPublished - 1 May 2006

Fingerprint

Thulium
thulium
Epilayers
Molecular beam epitaxy
Ion implantation
ion implantation
Doping (additives)
Raman scattering
Crystalline materials
implantation
Tin
Metallorganic chemical vapor deposition
disorders
Raman spectra
Ion beams
Frequency bands
Vacancies
Ions
Infrared radiation
metalorganic chemical vapor deposition

Keywords

  • GaN epilayers
  • lattices
  • raman spectra
  • raman scattering

Cite this

Hernandez, S ; Cusco, R ; Artus, L ; Nogales, E ; Martin, R W ; O'Donnell, K P ; Halambalakis, G ; Briot, O ; Lorenz, K ; Alves, E . / Lattice order in thulium-doped GaN epilayers : in situ doping versus ion implantation. In: Optical Materials. 2006 ; Vol. 28, No. 6-7. pp. 771-774.
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title = "Lattice order in thulium-doped GaN epilayers: in situ doping versus ion implantation",
abstract = "We have investigated the crystalline quality of thulium-doped GaN obtained either by in situ doping during MBE growth or by ion-beam implantation of MOCVD GaN layers. Both types of samples display the typical sharp intra-4f shell emission lines of Tm3+ ions in the blue and infrared spectral regions. The Raman spectra of the MBE samples indicate a good crystalline quality, showing the narrow E-2 and A(1) phonon peaks characteristic of GaN, even for the highest Tin concentrations. In contrast, Raman peaks associated with vacancy-related defects, as well as low-frequency bands due to disorder-activated modes can be observed in the Raman spectra of the implanted samples. These results indicate that, for the implantation doses required to achieve Tm emission, some residual disorder remains in the implanted GaN layers which is not observed in Tm-doped MBE samples with higher Tm concentration.",
keywords = "GaN epilayers , lattices, raman spectra, raman scattering",
author = "S Hernandez and R Cusco and L Artus and E Nogales and Martin, {R W} and O'Donnell, {K P} and G Halambalakis and O Briot and K Lorenz and E Alves",
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Hernandez, S, Cusco, R, Artus, L, Nogales, E, Martin, RW, O'Donnell, KP, Halambalakis, G, Briot, O, Lorenz, K & Alves, E 2006, 'Lattice order in thulium-doped GaN epilayers: in situ doping versus ion implantation', Optical Materials, vol. 28, no. 6-7, pp. 771-774. https://doi.org/10.1016/j.optmat.2005.09.021

Lattice order in thulium-doped GaN epilayers : in situ doping versus ion implantation. / Hernandez, S ; Cusco, R ; Artus, L ; Nogales, E ; Martin, R W ; O'Donnell, K P ; Halambalakis, G ; Briot, O ; Lorenz, K ; Alves, E .

In: Optical Materials, Vol. 28, No. 6-7, 01.05.2006, p. 771-774.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Lattice order in thulium-doped GaN epilayers

T2 - in situ doping versus ion implantation

AU - Hernandez, S

AU - Cusco, R

AU - Artus, L

AU - Nogales, E

AU - Martin, R W

AU - O'Donnell, K P

AU - Halambalakis, G

AU - Briot, O

AU - Lorenz, K

AU - Alves, E

N1 - Meeting of the European-Materials-Research-Society, Strasbourg, FRANCE, MAY 30-JUN 03, 2005

PY - 2006/5/1

Y1 - 2006/5/1

N2 - We have investigated the crystalline quality of thulium-doped GaN obtained either by in situ doping during MBE growth or by ion-beam implantation of MOCVD GaN layers. Both types of samples display the typical sharp intra-4f shell emission lines of Tm3+ ions in the blue and infrared spectral regions. The Raman spectra of the MBE samples indicate a good crystalline quality, showing the narrow E-2 and A(1) phonon peaks characteristic of GaN, even for the highest Tin concentrations. In contrast, Raman peaks associated with vacancy-related defects, as well as low-frequency bands due to disorder-activated modes can be observed in the Raman spectra of the implanted samples. These results indicate that, for the implantation doses required to achieve Tm emission, some residual disorder remains in the implanted GaN layers which is not observed in Tm-doped MBE samples with higher Tm concentration.

AB - We have investigated the crystalline quality of thulium-doped GaN obtained either by in situ doping during MBE growth or by ion-beam implantation of MOCVD GaN layers. Both types of samples display the typical sharp intra-4f shell emission lines of Tm3+ ions in the blue and infrared spectral regions. The Raman spectra of the MBE samples indicate a good crystalline quality, showing the narrow E-2 and A(1) phonon peaks characteristic of GaN, even for the highest Tin concentrations. In contrast, Raman peaks associated with vacancy-related defects, as well as low-frequency bands due to disorder-activated modes can be observed in the Raman spectra of the implanted samples. These results indicate that, for the implantation doses required to achieve Tm emission, some residual disorder remains in the implanted GaN layers which is not observed in Tm-doped MBE samples with higher Tm concentration.

KW - GaN epilayers

KW - lattices

KW - raman spectra

KW - raman scattering

U2 - 10.1016/j.optmat.2005.09.021

DO - 10.1016/j.optmat.2005.09.021

M3 - Article

VL - 28

SP - 771

EP - 774

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

IS - 6-7

ER -