Laser/modulator driver with high modulation output operating up to 14-Gb/s using 0.35um SiGe BiCMOS process

Day-Uei Li, Chia-Ming Tsai, Li-Ren Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

A laser driver capable of driving over 100 mA modulation current fabricated in 0.35/spl mu/m SiGe BiCMOS process was presented in this work. Measurements on mounted chips show clear electrical eye diagrams over 14-Gb/s data rate with a typical (20% to 80%) 24 ps rise time, 26 ps (20% to 80%) fall time, and a jitter (RMS) less than 2 ps. Moreover, optical eye diagram is also demonstrated by connecting the driver with a commercial 10-Gb/s 1310-nm laser diode and it stays well within the 10-Gb/s Ethernet transmitter mask.
Original languageEnglish
Title of host publication2004 IEEE Asia-Pacific Conference on Circuits and Systems (APC-CAS)
Place of PublicationPiscataway
PublisherIEEE
Pages225-228
Number of pages4
ISBN (Print)0780386604
DOIs
Publication statusPublished - 12 Jun 2004
Event2004 IEEE Asia-Pacific Conference on Circuits and Systems - Tayih Landis Hotel, Tainan, Taiwan, Province of China
Duration: 6 Dec 20049 Dec 2004

Conference

Conference2004 IEEE Asia-Pacific Conference on Circuits and Systems
CountryTaiwan, Province of China
CityTainan
Period6/12/049/12/04

Keywords

  • silicon germanium
  • germanium silicon alloys
  • bicmos integrated circuits
  • optical transmitters
  • electric variables measurement
  • semiconductor device measurement
  • time measurement
  • jitter
  • signal analysis
  • joining processes

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  • Cite this

    Li, D-U., Tsai, C-M., & Huang, L-R. (2004). Laser/modulator driver with high modulation output operating up to 14-Gb/s using 0.35um SiGe BiCMOS process. In 2004 IEEE Asia-Pacific Conference on Circuits and Systems (APC-CAS) (pp. 225-228). IEEE. https://doi.org/10.1109/APCCAS.2004.1412733