Laser/modulator driver with high modulation output operating up to 14-Gb/s using 0.35um SiGe BiCMOS process

Day-Uei Li; Chia-Ming Tsai; Li-Ren Huang

doi:10.1109/APCCAS.2004.1412733

Laser/modulator driver with high modulation output operating up to 14-Gb/s using 0.35um SiGe BiCMOS process

Day-Uei Li, Chia-Ming Tsai, Li-Ren Huang

Strathclyde Institute Of Pharmacy And Biomedical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

A laser driver capable of driving over 100 mA modulation current fabricated in 0.35/spl mu/m SiGe BiCMOS process was presented in this work. Measurements on mounted chips show clear electrical eye diagrams over 14-Gb/s data rate with a typical (20% to 80%) 24 ps rise time, 26 ps (20% to 80%) fall time, and a jitter (RMS) less than 2 ps. Moreover, optical eye diagram is also demonstrated by connecting the driver with a commercial 10-Gb/s 1310-nm laser diode and it stays well within the 10-Gb/s Ethernet transmitter mask.

Original language	English
Title of host publication	2004 IEEE Asia-Pacific Conference on Circuits and Systems (APC-CAS)
Place of Publication	Piscataway
Publisher	IEEE
Pages	225-228
Number of pages	4
ISBN (Print)	0780386604
DOIs	https://doi.org/10.1109/APCCAS.2004.1412733
Publication status	Published - 12 Jun 2004
Event	2004 IEEE Asia-Pacific Conference on Circuits and Systems - Tayih Landis Hotel, Tainan, Taiwan Duration: 6 Dec 2004 → 9 Dec 2004

Conference

Conference	2004 IEEE Asia-Pacific Conference on Circuits and Systems
Country/Territory	Taiwan
City	Tainan
Period	6/12/04 → 9/12/04

Keywords

silicon germanium
germanium silicon alloys
bicmos integrated circuits
optical transmitters
electric variables measurement
semiconductor device measurement
time measurement
jitter
signal analysis
joining processes

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10.1109/APCCAS.2004.1412733

Cite this

@inproceedings{09b3a70775bd4cf3a39a8055c1fcbfb9,

title = "Laser/modulator driver with high modulation output operating up to 14-Gb/s using 0.35um SiGe BiCMOS process",

abstract = "A laser driver capable of driving over 100 mA modulation current fabricated in 0.35/spl mu/m SiGe BiCMOS process was presented in this work. Measurements on mounted chips show clear electrical eye diagrams over 14-Gb/s data rate with a typical (20% to 80%) 24 ps rise time, 26 ps (20% to 80%) fall time, and a jitter (RMS) less than 2 ps. Moreover, optical eye diagram is also demonstrated by connecting the driver with a commercial 10-Gb/s 1310-nm laser diode and it stays well within the 10-Gb/s Ethernet transmitter mask.",

keywords = "silicon germanium, germanium silicon alloys, bicmos integrated circuits, optical transmitters, electric variables measurement, semiconductor device measurement, time measurement, jitter, signal analysis, joining processes",

author = "Day-Uei Li and Chia-Ming Tsai and Li-Ren Huang",

year = "2004",

month = jun,

day = "12",

doi = "10.1109/APCCAS.2004.1412733",

language = "English",

isbn = "0780386604",

pages = "225--228",

booktitle = "2004 IEEE Asia-Pacific Conference on Circuits and Systems (APC-CAS)",

publisher = "IEEE",

note = "2004 IEEE Asia-Pacific Conference on Circuits and Systems ; Conference date: 06-12-2004 Through 09-12-2004",

}

Li, D-U, Tsai, C-M & Huang, L-R 2004, Laser/modulator driver with high modulation output operating up to 14-Gb/s using 0.35um SiGe BiCMOS process. in 2004 IEEE Asia-Pacific Conference on Circuits and Systems (APC-CAS). IEEE, Piscataway, pp. 225-228, 2004 IEEE Asia-Pacific Conference on Circuits and Systems, Tainan, Taiwan, 6/12/04. https://doi.org/10.1109/APCCAS.2004.1412733

TY - GEN

T1 - Laser/modulator driver with high modulation output operating up to 14-Gb/s using 0.35um SiGe BiCMOS process

AU - Li, Day-Uei

AU - Tsai, Chia-Ming

AU - Huang, Li-Ren

PY - 2004/6/12

Y1 - 2004/6/12

N2 - A laser driver capable of driving over 100 mA modulation current fabricated in 0.35/spl mu/m SiGe BiCMOS process was presented in this work. Measurements on mounted chips show clear electrical eye diagrams over 14-Gb/s data rate with a typical (20% to 80%) 24 ps rise time, 26 ps (20% to 80%) fall time, and a jitter (RMS) less than 2 ps. Moreover, optical eye diagram is also demonstrated by connecting the driver with a commercial 10-Gb/s 1310-nm laser diode and it stays well within the 10-Gb/s Ethernet transmitter mask.

AB - A laser driver capable of driving over 100 mA modulation current fabricated in 0.35/spl mu/m SiGe BiCMOS process was presented in this work. Measurements on mounted chips show clear electrical eye diagrams over 14-Gb/s data rate with a typical (20% to 80%) 24 ps rise time, 26 ps (20% to 80%) fall time, and a jitter (RMS) less than 2 ps. Moreover, optical eye diagram is also demonstrated by connecting the driver with a commercial 10-Gb/s 1310-nm laser diode and it stays well within the 10-Gb/s Ethernet transmitter mask.

KW - silicon germanium

KW - germanium silicon alloys

KW - bicmos integrated circuits

KW - optical transmitters

KW - electric variables measurement

KW - semiconductor device measurement

KW - time measurement

KW - jitter

KW - signal analysis

KW - joining processes

U2 - 10.1109/APCCAS.2004.1412733

DO - 10.1109/APCCAS.2004.1412733

M3 - Conference contribution book

SN - 0780386604

SP - 225

EP - 228

BT - 2004 IEEE Asia-Pacific Conference on Circuits and Systems (APC-CAS)

PB - IEEE

CY - Piscataway

T2 - 2004 IEEE Asia-Pacific Conference on Circuits and Systems

Y2 - 6 December 2004 through 9 December 2004

ER -

Laser/modulator driver with high modulation output operating up to 14-Gb/s using 0.35um SiGe BiCMOS process

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Keywords

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