Kinetic phase diagram for island nucleation and growth during homoepitaxy

P.A. Mulheran, M. Basham

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The impact of small-island dissociation and mobility on island nucleation and growth during vapor deposition of thin films is analyzed using mean field rate equations. The dominant island nucleation and growth mechanism is mapped onto a temperature/deposition-rate kinetic phase diagram, using Cu(100) homoepitaxy as an example. The methodology provides analytical expressions for the boundaries on the diagram and encourages a deeper understanding of the growth mechanisms. A kinetic Monte Carlo simulation incorporating the small-island dynamics is also presented and used to test the kinetic phase diagram, and satisfactory agreement is found throughout.
Original languageEnglish
Pages (from-to)075427-075432
Number of pages5
JournalPhysical Review B
Issue number7
Publication statusPublished - 26 Feb 2008


  • kinetic phase diagram
  • island nucleation
  • growth
  • homoepitaxy


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