Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H

H. Gleskova, J. N. Bullock, S. Wagner

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The results of a study of the kinetics of the light-induced annealing of defects in hydrogenated amorphous silicon (a-Si:H) at the temperature of 125°C are presented. The rate of removal of the metastable defects and the final steady-state defect density both increase with light intensity. The functional dependence of the light-induced annealing term on the light intensity, or carrier generation rate G, is proportional to G0.66−0.84, and thus is proportional to the density of the photo-generated carriers.
LanguageEnglish
Pages183-186
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 1
DOIs
Publication statusPublished - 2 Dec 1993
Event15th International Conference on Amorphous Semiconductors - Cambridge , United Kingdom
Duration: 6 Sep 199310 Sep 1993

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Dangling bonds
Annealing
Defects
luminous intensity
annealing
defects
amorphous silicon
Defect density
Amorphous silicon
kinetics
Kinetics
temperature
Temperature

Keywords

  • non-crystalline solids
  • light-induced annealing
  • annealing
  • metastable defects

Cite this

Gleskova, H. ; Bullock, J. N. ; Wagner, S. / Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H. In: Journal of Non-Crystalline Solids. 1993 ; Vol. 164-166, No. PART 1. pp. 183-186.
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Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H. / Gleskova, H.; Bullock, J. N.; Wagner, S.

In: Journal of Non-Crystalline Solids, Vol. 164-166, No. PART 1, 02.12.1993, p. 183-186.

Research output: Contribution to journalArticle

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