Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H

H. Gleskova, J. N. Bullock, S. Wagner

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The results of a study of the kinetics of the light-induced annealing of defects in hydrogenated amorphous silicon (a-Si:H) at the temperature of 125°C are presented. The rate of removal of the metastable defects and the final steady-state defect density both increase with light intensity. The functional dependence of the light-induced annealing term on the light intensity, or carrier generation rate G, is proportional to G0.66−0.84, and thus is proportional to the density of the photo-generated carriers.
Original languageEnglish
Pages (from-to)183-186
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 1
DOIs
Publication statusPublished - 2 Dec 1993
Event15th International Conference on Amorphous Semiconductors - Cambridge , United Kingdom
Duration: 6 Sep 199310 Sep 1993

Keywords

  • non-crystalline solids
  • light-induced annealing
  • annealing
  • metastable defects

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