Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H

H. Gleskova; J. N. Bullock; S. Wagner

doi:10.1016/0022-3093(93)90521-X

Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H

H. Gleskova^*, J. N. Bullock, S. Wagner

^*Corresponding author for this work

Electronic And Electrical Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The results of a study of the kinetics of the light-induced annealing of defects in hydrogenated amorphous silicon (a-Si:H) at the temperature of 125°C are presented. The rate of removal of the metastable defects and the final steady-state defect density both increase with light intensity. The functional dependence of the light-induced annealing term on the light intensity, or carrier generation rate G, is proportional to G0.66−0.84, and thus is proportional to the density of the photo-generated carriers.

Original language	English
Pages (from-to)	183-186
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	164-166
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(93)90521-X
Publication status	Published - 2 Dec 1993
Event	15th International Conference on Amorphous Semiconductors - Cambridge , United Kingdom Duration: 6 Sept 1993 → 10 Sept 1993

Keywords

non-crystalline solids
light-induced annealing
annealing
metastable defects

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10.1016/0022-3093(93)90521-X

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title = "Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H",

abstract = "The results of a study of the kinetics of the light-induced annealing of defects in hydrogenated amorphous silicon (a-Si:H) at the temperature of 125°C are presented. The rate of removal of the metastable defects and the final steady-state defect density both increase with light intensity. The functional dependence of the light-induced annealing term on the light intensity, or carrier generation rate G, is proportional to G0.66−0.84, and thus is proportional to the density of the photo-generated carriers.",

keywords = "non-crystalline solids, light-induced annealing , annealing, metastable defects",

author = "H. Gleskova and Bullock, {J. N.} and S. Wagner",

year = "1993",

month = dec,

day = "2",

doi = "10.1016/0022-3093(93)90521-X",

language = "English",

volume = "164-166",

pages = "183--186",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

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note = "15th International Conference on Amorphous Semiconductors ; Conference date: 06-09-1993 Through 10-09-1993",

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TY - JOUR

T1 - Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H

AU - Gleskova, H.

AU - Bullock, J. N.

AU - Wagner, S.

PY - 1993/12/2

Y1 - 1993/12/2

N2 - The results of a study of the kinetics of the light-induced annealing of defects in hydrogenated amorphous silicon (a-Si:H) at the temperature of 125°C are presented. The rate of removal of the metastable defects and the final steady-state defect density both increase with light intensity. The functional dependence of the light-induced annealing term on the light intensity, or carrier generation rate G, is proportional to G0.66−0.84, and thus is proportional to the density of the photo-generated carriers.

AB - The results of a study of the kinetics of the light-induced annealing of defects in hydrogenated amorphous silicon (a-Si:H) at the temperature of 125°C are presented. The rate of removal of the metastable defects and the final steady-state defect density both increase with light intensity. The functional dependence of the light-induced annealing term on the light intensity, or carrier generation rate G, is proportional to G0.66−0.84, and thus is proportional to the density of the photo-generated carriers.

KW - non-crystalline solids

KW - light-induced annealing

KW - annealing

KW - metastable defects

UR - http://www.scopus.com/inward/record.url?scp=0027906815&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(93)90521-X

DO - 10.1016/0022-3093(93)90521-X

M3 - Article

AN - SCOPUS:0027906815

SN - 0022-3093

VL - 164-166

SP - 183

EP - 186

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

T2 - 15th International Conference on Amorphous Semiconductors

Y2 - 6 September 1993 through 10 September 1993

ER -

Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H

Abstract

Keywords

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