Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

Helena Gleskova, S. Wagner

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

1 Citation (Scopus)

Abstract

This chapter looks at whether thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons
LanguageEnglish
Title of host publicationAmorphous silicon technology - 1995
Subtitle of host publicationvolume 377 - MRS proceedings
EditorsM. Hack, A. Madan, A. Matsuda, M. Powell, E. A. Schiff
Place of PublicationWarrendale, PA
Pages343-348
Number of pages6
Volume377
Publication statusPublished - 20 Nov 1995
EventMRS Spring Meeting 1995 - San Francisco, United States
Duration: 17 Apr 199521 Apr 1995

Publication series

NameMRS Symposium Proceedings
PublisherMaterials Research Society
Volume377

Conference

ConferenceMRS Spring Meeting 1995
CountryUnited States
CitySan Francisco
Period17/04/9521/04/95

Fingerprint

annealing
defects
electrons

Keywords

  • thermal
  • light-induced annealing
  • metastable defects

Cite this

Gleskova, H., & Wagner, S. (1995). Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? In M. Hack, A. Madan, A. Matsuda, M. Powell, & E. A. Schiff (Eds.), Amorphous silicon technology - 1995: volume 377 - MRS proceedings (Vol. 377, pp. 343-348). (MRS Symposium Proceedings; Vol. 377). Warrendale, PA.
Gleskova, Helena ; Wagner, S. / Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?. Amorphous silicon technology - 1995: volume 377 - MRS proceedings. editor / M. Hack ; A. Madan ; A. Matsuda ; M. Powell ; E. A. Schiff. Vol. 377 Warrendale, PA, 1995. pp. 343-348 (MRS Symposium Proceedings).
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Gleskova, H & Wagner, S 1995, Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? in M Hack, A Madan, A Matsuda, M Powell & EA Schiff (eds), Amorphous silicon technology - 1995: volume 377 - MRS proceedings. vol. 377, MRS Symposium Proceedings, vol. 377, Warrendale, PA, pp. 343-348, MRS Spring Meeting 1995, San Francisco, United States, 17/04/95.

Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? / Gleskova, Helena; Wagner, S.

Amorphous silicon technology - 1995: volume 377 - MRS proceedings. ed. / M. Hack; A. Madan; A. Matsuda; M. Powell; E. A. Schiff. Vol. 377 Warrendale, PA, 1995. p. 343-348 (MRS Symposium Proceedings; Vol. 377).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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Gleskova H, Wagner S. Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? In Hack M, Madan A, Matsuda A, Powell M, Schiff EA, editors, Amorphous silicon technology - 1995: volume 377 - MRS proceedings. Vol. 377. Warrendale, PA. 1995. p. 343-348. (MRS Symposium Proceedings).