Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

Helena Gleskova, S. Wagner

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

1 Citation (Scopus)

Abstract

This chapter looks at whether thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons
Original languageEnglish
Title of host publicationAmorphous silicon technology - 1995
Subtitle of host publicationvolume 377 - MRS proceedings
EditorsM. Hack, A. Madan, A. Matsuda, M. Powell, E. A. Schiff
Place of PublicationWarrendale, PA
Pages343-348
Number of pages6
Volume377
Publication statusPublished - 20 Nov 1995
EventMRS Spring Meeting 1995 - San Francisco, United States
Duration: 17 Apr 199521 Apr 1995

Publication series

NameMRS Symposium Proceedings
PublisherMaterials Research Society
Volume377

Conference

ConferenceMRS Spring Meeting 1995
CountryUnited States
CitySan Francisco
Period17/04/9521/04/95

Keywords

  • thermal
  • light-induced annealing
  • metastable defects

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