Investigations of phonon sidebands in InGaN/GaN multi-quantum well luminescence

R. Pecharroman-Gallego, P.R. Edwards, R.W. Martin, I.M. Watson

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40 Citations (Scopus)


Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series of InGaN/GaN multi-quantum wells is described. The structures are grown by metal organic vapour phase epitaxy (MOVPE) on sapphire substrates and cover a range of emission wavelengths (390-600 nm) and number of quantum wells (from 1 to 10). Up to four phonon satellites are observed in the side-band of the quantum well luminescence, with an energy separation similar to the GaN LO-phonon energy (90 meV). The relative intensity and spectral properties of these satellites have been investigated as a function of the peak energy of the luminescence, sample temperature and the number of wells. Huang-Rhys parameters in the range 0.1-0.6 are observed. Analysis of the shape of the PSBs from the single quantum wells (SQWs) indicate that a significant fraction (40%) of the excitons are strongly localised. This fraction shows some increase for samples emitting at longer wavelengths. The relative strength of the first phonon satellite, compared with the no-phonon peak, is observed to increase with temperature and decrease with the number of periods in the multi-quantum well structures
Original languageEnglish
Pages (from-to)94-97
Number of pages4
JournalMaterials Science and Engineering B
Issue number1-3
Publication statusPublished - 30 May 2002


  • nitride semiconductors
  • phonons
  • InGaN
  • optical properties
  • Huang-Rhys parameter


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