TY - JOUR
T1 - Investigations of phonon sidebands in InGaN/GaN multi-quantum well luminescence
AU - Pecharroman-Gallego, R.
AU - Edwards, P.R.
AU - Martin, R.W.
AU - Watson, I.M.
PY - 2002/5/30
Y1 - 2002/5/30
N2 - Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series of InGaN/GaN multi-quantum wells is described. The structures are grown by metal organic vapour phase epitaxy (MOVPE) on sapphire substrates and cover a range of emission wavelengths (390-600 nm) and number of quantum wells (from 1 to 10). Up to four phonon satellites are observed in the side-band of the quantum well luminescence, with an energy separation similar to the GaN LO-phonon energy (90 meV). The relative intensity and spectral properties of these satellites have been investigated as a function of the peak energy of the luminescence, sample temperature and the number of wells. Huang-Rhys parameters in the range 0.1-0.6 are observed. Analysis of the shape of the PSBs from the single quantum wells (SQWs) indicate that a significant fraction (40%) of the excitons are strongly localised. This fraction shows some increase for samples emitting at longer wavelengths. The relative strength of the first phonon satellite, compared with the no-phonon peak, is observed to increase with temperature and decrease with the number of periods in the multi-quantum well structures
AB - Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series of InGaN/GaN multi-quantum wells is described. The structures are grown by metal organic vapour phase epitaxy (MOVPE) on sapphire substrates and cover a range of emission wavelengths (390-600 nm) and number of quantum wells (from 1 to 10). Up to four phonon satellites are observed in the side-band of the quantum well luminescence, with an energy separation similar to the GaN LO-phonon energy (90 meV). The relative intensity and spectral properties of these satellites have been investigated as a function of the peak energy of the luminescence, sample temperature and the number of wells. Huang-Rhys parameters in the range 0.1-0.6 are observed. Analysis of the shape of the PSBs from the single quantum wells (SQWs) indicate that a significant fraction (40%) of the excitons are strongly localised. This fraction shows some increase for samples emitting at longer wavelengths. The relative strength of the first phonon satellite, compared with the no-phonon peak, is observed to increase with temperature and decrease with the number of periods in the multi-quantum well structures
KW - nitride semiconductors
KW - phonons
KW - InGaN
KW - optical properties
KW - Huang-Rhys parameter
UR - http://dx.doi.org/10.1016/S0921-5107(02)00024-7
U2 - 10.1016/S0921-5107(02)00024-7
DO - 10.1016/S0921-5107(02)00024-7
M3 - Article
SN - 0921-5107
VL - 93
SP - 94
EP - 97
JO - Materials Science and Engineering B
JF - Materials Science and Engineering B
IS - 1-3
ER -