Investigations of 1.55µm GaInNAs/GaAs heterostructures by optical spectroscopy

H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson, H.Y. Liu, M. Hopkinson, P. Navaretti, J.S. Ng, J.P.R. David, P. Gilet, L. Grenouillet, A. Million

Research output: Contribution to journalArticle

Abstract

Dilute nitride semiconductors are a topic of major current research interest owing to the novel physics induced by the incorporation of N in small percentages of composition. Related research has been further motivated by the favourable characteristics for device applications of the resultant materials, particularly represented by GaInNAs quaternary compounds as active materials in the 1.3–1.6 µm wavelength range. Whilst 1.3-µm GaInNAs/GaAs materials and devices are now reaching a level of maturity, the extension of these structures to around 1.55 µm is still in its infancy. The authors report optical studies of 1.55-µm GaInNAs/GaAs heterostructures of varying characteristics, all grown by molecular beam epitaxy. As the addition of N complicates the local structure and optical properties in this material system, the PL mechanisms are clarified by detailed PL excitation (PLE) spectra. Whereas all the measured samples exhibit strong PL at room temperature, the electronic structure is quite different between samples grown under different conditions. Some demonstrate clearly standard 2-D quantum well (QW) electronic states and some demonstrate evidence of phase-separated quantum-dot-like (QD) structures.
LanguageEnglish
Pages331-334
Number of pages4
JournalIEE Proceedings Optoelectronics
Volume151
Issue number5
DOIs
Publication statusPublished - 2004

Fingerprint

Heterojunctions
spectroscopy
nitrides
molecular beam epitaxy
quantum dots
quantum wells
electronic structure
optical properties
physics
Electronic states
room temperature
electronics
Molecular beam epitaxy
wavelengths
Nitrides
Semiconductor quantum wells
Semiconductor quantum dots
excitation
Electronic structure
Physics

Keywords

  • photonics
  • optical spectroscopy
  • GaInNAs/GaAs heterostructures

Cite this

Sun, H. D., Clark, A. H., Calvez, S., Dawson, M. D., Liu, H. Y., Hopkinson, M., ... Million, A. (2004). Investigations of 1.55µm GaInNAs/GaAs heterostructures by optical spectroscopy. IEE Proceedings Optoelectronics, 151(5), 331-334. https://doi.org/10.1049/ip-opt:20040866
Sun, H.D. ; Clark, A.H. ; Calvez, S. ; Dawson, M.D. ; Liu, H.Y. ; Hopkinson, M. ; Navaretti, P. ; Ng, J.S. ; David, J.P.R. ; Gilet, P. ; Grenouillet, L. ; Million, A. / Investigations of 1.55µm GaInNAs/GaAs heterostructures by optical spectroscopy. In: IEE Proceedings Optoelectronics. 2004 ; Vol. 151, No. 5. pp. 331-334.
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Sun, HD, Clark, AH, Calvez, S, Dawson, MD, Liu, HY, Hopkinson, M, Navaretti, P, Ng, JS, David, JPR, Gilet, P, Grenouillet, L & Million, A 2004, 'Investigations of 1.55µm GaInNAs/GaAs heterostructures by optical spectroscopy' IEE Proceedings Optoelectronics, vol. 151, no. 5, pp. 331-334. https://doi.org/10.1049/ip-opt:20040866

Investigations of 1.55µm GaInNAs/GaAs heterostructures by optical spectroscopy. / Sun, H.D.; Clark, A.H.; Calvez, S.; Dawson, M.D.; Liu, H.Y.; Hopkinson, M.; Navaretti, P.; Ng, J.S.; David, J.P.R.; Gilet, P.; Grenouillet, L.; Million, A.

In: IEE Proceedings Optoelectronics, Vol. 151, No. 5, 2004, p. 331-334.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigations of 1.55µm GaInNAs/GaAs heterostructures by optical spectroscopy

AU - Sun, H.D.

AU - Clark, A.H.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Liu, H.Y.

AU - Hopkinson, M.

AU - Navaretti, P.

AU - Ng, J.S.

AU - David, J.P.R.

AU - Gilet, P.

AU - Grenouillet, L.

AU - Million, A.

PY - 2004

Y1 - 2004

N2 - Dilute nitride semiconductors are a topic of major current research interest owing to the novel physics induced by the incorporation of N in small percentages of composition. Related research has been further motivated by the favourable characteristics for device applications of the resultant materials, particularly represented by GaInNAs quaternary compounds as active materials in the 1.3–1.6 µm wavelength range. Whilst 1.3-µm GaInNAs/GaAs materials and devices are now reaching a level of maturity, the extension of these structures to around 1.55 µm is still in its infancy. The authors report optical studies of 1.55-µm GaInNAs/GaAs heterostructures of varying characteristics, all grown by molecular beam epitaxy. As the addition of N complicates the local structure and optical properties in this material system, the PL mechanisms are clarified by detailed PL excitation (PLE) spectra. Whereas all the measured samples exhibit strong PL at room temperature, the electronic structure is quite different between samples grown under different conditions. Some demonstrate clearly standard 2-D quantum well (QW) electronic states and some demonstrate evidence of phase-separated quantum-dot-like (QD) structures.

AB - Dilute nitride semiconductors are a topic of major current research interest owing to the novel physics induced by the incorporation of N in small percentages of composition. Related research has been further motivated by the favourable characteristics for device applications of the resultant materials, particularly represented by GaInNAs quaternary compounds as active materials in the 1.3–1.6 µm wavelength range. Whilst 1.3-µm GaInNAs/GaAs materials and devices are now reaching a level of maturity, the extension of these structures to around 1.55 µm is still in its infancy. The authors report optical studies of 1.55-µm GaInNAs/GaAs heterostructures of varying characteristics, all grown by molecular beam epitaxy. As the addition of N complicates the local structure and optical properties in this material system, the PL mechanisms are clarified by detailed PL excitation (PLE) spectra. Whereas all the measured samples exhibit strong PL at room temperature, the electronic structure is quite different between samples grown under different conditions. Some demonstrate clearly standard 2-D quantum well (QW) electronic states and some demonstrate evidence of phase-separated quantum-dot-like (QD) structures.

KW - photonics

KW - optical spectroscopy

KW - GaInNAs/GaAs heterostructures

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DO - 10.1049/ip-opt:20040866

M3 - Article

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SP - 331

EP - 334

JO - IEE Proceedings Optoelectronics

T2 - IEE Proceedings Optoelectronics

JF - IEE Proceedings Optoelectronics

SN - 1350-2433

IS - 5

ER -