Abstract
| Language | English |
|---|---|
| Pages | 331-334 |
| Number of pages | 4 |
| Journal | IEE Proceedings Optoelectronics |
| Volume | 151 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2004 |
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Keywords
- photonics
- optical spectroscopy
- GaInNAs/GaAs heterostructures
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Investigations of 1.55µm GaInNAs/GaAs heterostructures by optical spectroscopy. / Sun, H.D.; Clark, A.H.; Calvez, S.; Dawson, M.D.; Liu, H.Y.; Hopkinson, M.; Navaretti, P.; Ng, J.S.; David, J.P.R.; Gilet, P.; Grenouillet, L.; Million, A.
In: IEE Proceedings Optoelectronics, Vol. 151, No. 5, 2004, p. 331-334.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigations of 1.55µm GaInNAs/GaAs heterostructures by optical spectroscopy
AU - Sun, H.D.
AU - Clark, A.H.
AU - Calvez, S.
AU - Dawson, M.D.
AU - Liu, H.Y.
AU - Hopkinson, M.
AU - Navaretti, P.
AU - Ng, J.S.
AU - David, J.P.R.
AU - Gilet, P.
AU - Grenouillet, L.
AU - Million, A.
PY - 2004
Y1 - 2004
N2 - Dilute nitride semiconductors are a topic of major current research interest owing to the novel physics induced by the incorporation of N in small percentages of composition. Related research has been further motivated by the favourable characteristics for device applications of the resultant materials, particularly represented by GaInNAs quaternary compounds as active materials in the 1.3–1.6 µm wavelength range. Whilst 1.3-µm GaInNAs/GaAs materials and devices are now reaching a level of maturity, the extension of these structures to around 1.55 µm is still in its infancy. The authors report optical studies of 1.55-µm GaInNAs/GaAs heterostructures of varying characteristics, all grown by molecular beam epitaxy. As the addition of N complicates the local structure and optical properties in this material system, the PL mechanisms are clarified by detailed PL excitation (PLE) spectra. Whereas all the measured samples exhibit strong PL at room temperature, the electronic structure is quite different between samples grown under different conditions. Some demonstrate clearly standard 2-D quantum well (QW) electronic states and some demonstrate evidence of phase-separated quantum-dot-like (QD) structures.
AB - Dilute nitride semiconductors are a topic of major current research interest owing to the novel physics induced by the incorporation of N in small percentages of composition. Related research has been further motivated by the favourable characteristics for device applications of the resultant materials, particularly represented by GaInNAs quaternary compounds as active materials in the 1.3–1.6 µm wavelength range. Whilst 1.3-µm GaInNAs/GaAs materials and devices are now reaching a level of maturity, the extension of these structures to around 1.55 µm is still in its infancy. The authors report optical studies of 1.55-µm GaInNAs/GaAs heterostructures of varying characteristics, all grown by molecular beam epitaxy. As the addition of N complicates the local structure and optical properties in this material system, the PL mechanisms are clarified by detailed PL excitation (PLE) spectra. Whereas all the measured samples exhibit strong PL at room temperature, the electronic structure is quite different between samples grown under different conditions. Some demonstrate clearly standard 2-D quantum well (QW) electronic states and some demonstrate evidence of phase-separated quantum-dot-like (QD) structures.
KW - photonics
KW - optical spectroscopy
KW - GaInNAs/GaAs heterostructures
U2 - 10.1049/ip-opt:20040866
DO - 10.1049/ip-opt:20040866
M3 - Article
VL - 151
SP - 331
EP - 334
JO - IEE Proceedings Optoelectronics
T2 - IEE Proceedings Optoelectronics
JF - IEE Proceedings Optoelectronics
SN - 1350-2433
IS - 5
ER -