Investigation of the unusual temperature dependence of ingan/gan quantum well photoluminescence over a range of emission energies

R Pecharroman-Gallego, R W Martin, I M Watson

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Abstract

An analysis of photoluminescence (PL) spectra for a range of single and multiple InGaN/GaN quantum wells, as a function of temperature, is presented. The well-known anomalous 'S-shape' behaviour is observed for samples emitting over a very wide range of energies. We present an analysis of this range of data, supplemented by other published data, in terms of different types of recombination sites within the wells. A quantitative model, based on previous work, to fit the temperature dependence of the emission peak energy is developed and gives good fits over an extended temperature range. The fitting parameters obtained are discussed in the light of values obtained from the literature and the intense piezoelectric fields present in the samples. Furthermore, the linewidth dependence of the PL emission peak energy in the region of the 'S-shape' is also analysed.
LanguageEnglish
Pages2954-2961
Number of pages7
JournalJournal of Physics D: Applied Physics
Volume37
Issue number21
DOIs
Publication statusPublished - 7 Nov 2004

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Semiconductor quantum wells
Photoluminescence
quantum wells
photoluminescence
temperature dependence
Linewidth
Temperature
energy
temperature

Keywords

  • carrier dynamics
  • room-temperature
  • band
  • luminescence
  • epilayers
  • shift
  • laser
  • dimensionality
  • recombination
  • localization

Cite this

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title = "Investigation of the unusual temperature dependence of ingan/gan quantum well photoluminescence over a range of emission energies",
abstract = "An analysis of photoluminescence (PL) spectra for a range of single and multiple InGaN/GaN quantum wells, as a function of temperature, is presented. The well-known anomalous 'S-shape' behaviour is observed for samples emitting over a very wide range of energies. We present an analysis of this range of data, supplemented by other published data, in terms of different types of recombination sites within the wells. A quantitative model, based on previous work, to fit the temperature dependence of the emission peak energy is developed and gives good fits over an extended temperature range. The fitting parameters obtained are discussed in the light of values obtained from the literature and the intense piezoelectric fields present in the samples. Furthermore, the linewidth dependence of the PL emission peak energy in the region of the 'S-shape' is also analysed.",
keywords = "carrier dynamics, room-temperature, band, luminescence, epilayers, shift, laser, dimensionality, recombination, localization",
author = "R Pecharroman-Gallego and Martin, {R W} and Watson, {I M}",
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TY - JOUR

T1 - Investigation of the unusual temperature dependence of ingan/gan quantum well photoluminescence over a range of emission energies

AU - Pecharroman-Gallego, R

AU - Martin, R W

AU - Watson, I M

PY - 2004/11/7

Y1 - 2004/11/7

N2 - An analysis of photoluminescence (PL) spectra for a range of single and multiple InGaN/GaN quantum wells, as a function of temperature, is presented. The well-known anomalous 'S-shape' behaviour is observed for samples emitting over a very wide range of energies. We present an analysis of this range of data, supplemented by other published data, in terms of different types of recombination sites within the wells. A quantitative model, based on previous work, to fit the temperature dependence of the emission peak energy is developed and gives good fits over an extended temperature range. The fitting parameters obtained are discussed in the light of values obtained from the literature and the intense piezoelectric fields present in the samples. Furthermore, the linewidth dependence of the PL emission peak energy in the region of the 'S-shape' is also analysed.

AB - An analysis of photoluminescence (PL) spectra for a range of single and multiple InGaN/GaN quantum wells, as a function of temperature, is presented. The well-known anomalous 'S-shape' behaviour is observed for samples emitting over a very wide range of energies. We present an analysis of this range of data, supplemented by other published data, in terms of different types of recombination sites within the wells. A quantitative model, based on previous work, to fit the temperature dependence of the emission peak energy is developed and gives good fits over an extended temperature range. The fitting parameters obtained are discussed in the light of values obtained from the literature and the intense piezoelectric fields present in the samples. Furthermore, the linewidth dependence of the PL emission peak energy in the region of the 'S-shape' is also analysed.

KW - carrier dynamics

KW - room-temperature

KW - band

KW - luminescence

KW - epilayers

KW - shift

KW - laser

KW - dimensionality

KW - recombination

KW - localization

UR - http://iopscience.iop.org/article/10.1088/0022-3727/37/21/003;jsessionid=E88A68420104B549A7C3553579C9D20E.c1.iopscience.cld.iop.org

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DO - 10.1088/0022-3727/37/21/003

M3 - Article

VL - 37

SP - 2954

EP - 2961

JO - Journal of Physics D: Applied Physics

T2 - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

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