Investigation of the structural, optical and electrical properties of Cu3BiS3 semiconducting thin films

M.V. Yakushev, P. Maiello, T. Raadik, M.J. Shaw, P.R. Edwards, J. Krustok, A.V. Mudryi, I. Forbes, R.W. Martin

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Abstract

The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24 eV and EgY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.
Original languageEnglish
Pages (from-to)166-172
Number of pages7
JournalEnergy Procedia
Volume60
Early online date25 Dec 2014
DOIs
Publication statusPublished - 2014
EventE-MRS Spring Meeting 2014 - Lille, France
Duration: 26 May 201430 May 2014

Keywords

  • Cu3BiS3
  • thin films
  • solar cells
  • Raman spectroscopy
  • photoluminescence
  • photoreflectance

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