Investigation of the structural, optical and electrical properties of Cu3BiS3 semiconducting thin films

M.V. Yakushev; P. Maiello; T. Raadik; M.J. Shaw; P.R. Edwards; J. Krustok; A.V. Mudryi; I. Forbes; R.W. Martin

doi:10.1016/j.egypro.2014.12.359

Investigation of the structural, optical and electrical properties of Cu₃BiS₃ semiconducting thin films

M.V. Yakushev, P. Maiello, T. Raadik, M.J. Shaw, P.R. Edwards, J. Krustok, A.V. Mudryi, I. Forbes, R.W. Martin

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Abstract

The elemental composition, structural, optical and electronic properties of p-type Cu₃BiS₃ thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu_3.00Bi_0.92S_3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (E_gX =1.24 eV and E_gY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of E_gX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.

Original language	English
Pages (from-to)	166-172
Number of pages	7
Journal	Energy Procedia
Volume	60
Early online date	25 Dec 2014
DOIs	https://doi.org/10.1016/j.egypro.2014.12.359
Publication status	Published - 2014
Event	E-MRS Spring Meeting 2014 - Lille, France Duration: 26 May 2014 → 30 May 2014

Keywords

Cu3BiS3
thin films
solar cells
Raman spectroscopy
photoluminescence
photoreflectance

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10.1016/j.egypro.2014.12.359

Yakushev-etal-EP-2014-Investigation-of-the-structural-optical-and-electrical-propertiesFinal published version, 598 KBLicence: CC BY-NC-ND 4.0

Cite this

@article{7262539dc08347319dde5bf3a93bdcb7,

title = "Investigation of the structural, optical and electrical properties of Cu3BiS3 semiconducting thin films",

abstract = "The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24 eV and EgY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.",

keywords = "Cu3BiS3, thin films, solar cells, Raman spectroscopy, photoluminescence, photoreflectance",

author = "M.V. Yakushev and P. Maiello and T. Raadik and M.J. Shaw and P.R. Edwards and J. Krustok and A.V. Mudryi and I. Forbes and R.W. Martin",

year = "2014",

doi = "10.1016/j.egypro.2014.12.359",

language = "English",

volume = "60",

pages = "166--172",

journal = "Energy Procedia",

issn = "1876-6102",

note = "E-MRS Spring Meeting 2014 ; Conference date: 26-05-2014 Through 30-05-2014",

}

TY - JOUR

T1 - Investigation of the structural, optical and electrical properties of Cu3BiS3 semiconducting thin films

AU - Yakushev, M.V.

AU - Maiello, P.

AU - Raadik, T.

AU - Shaw, M.J.

AU - Edwards, P.R.

AU - Krustok, J.

AU - Mudryi, A.V.

AU - Forbes, I.

AU - Martin, R.W.

PY - 2014

Y1 - 2014

N2 - The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24 eV and EgY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.

AB - The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24 eV and EgY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.

KW - Cu3BiS3

KW - thin films

KW - solar cells

KW - Raman spectroscopy

KW - photoluminescence

KW - photoreflectance

U2 - 10.1016/j.egypro.2014.12.359

DO - 10.1016/j.egypro.2014.12.359

M3 - Article

VL - 60

SP - 166

EP - 172

JO - Energy Procedia

JF - Energy Procedia

SN - 1876-6102

T2 - E-MRS Spring Meeting 2014

Y2 - 26 May 2014 through 30 May 2014

ER -