The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24 eV and EgY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.
- thin films
- solar cells
- Raman spectroscopy
Yakushev, M. V., Maiello, P., Raadik, T., Shaw, M. J., Edwards, P. R., Krustok, J., Mudryi, A. V., Forbes, I., & Martin, R. W. (2014). Investigation of the structural, optical and electrical properties of Cu3BiS3 semiconducting thin films. Energy Procedia, 60, 166-172. https://doi.org/10.1016/j.egypro.2014.12.359