Investigation of phase-separated electronic states in 1.5 mu m GaInNAs/GaAs heterostructures by optical spectroscopy

H D Sun, A H Clark, S Calvez, M D Dawson, P Gilet, L Grenouillet, A Million

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report on the comparative electronic state characteristics of particular GaInNAs/GaAs quantum well structures that emit near 1.3 and 1.5 mum wavelength at room temperature. While the electronic structure of the 1.3 mum sample is consistent with a standard quantum well, the 1.5 mum sample demonstrate quite different characteristics. By using photoluminescence (PL) excitation spectroscopy at various detection wavelengths, we demonstrate that the macroscopic electronic states in the 1.5 mum structures originate from phase-separated quantum dots instead of quantum wells. PL measurements with spectrally selective excitation provide further evidence for the existence of composition-separated phases. The evidence is consistent with phase segregation during the growth leading to two phases, one with high In and N content which accounts for the efficient low energy 1.5 mum emission, and the other one having lower In and N content which contributes metastable states and only emits under excitation in a particular wavelength range. (C) 2005 American Institute of Physics.

LanguageEnglish
Article number033517
Pages-
Number of pages5
JournalJournal of Applied Physics
Volume97
Issue number3
DOIs
Publication statusPublished - 1 Feb 2005

Fingerprint

quantum wells
electronics
wavelengths
spectroscopy
excitation
photoluminescence
metastable state
quantum dots
electronic structure
room temperature
energy

Keywords

  • gaas
  • molecular beam epitaxy
  • low nitrogen content
  • laser diodes
  • multiquantum wells
  • carrier localization
  • energy relaxation
  • conduction band
  • quantum dots

Cite this

Sun, H. D., Clark, A. H., Calvez, S., Dawson, M. D., Gilet, P., Grenouillet, L., & Million, A. (2005). Investigation of phase-separated electronic states in 1.5 mu m GaInNAs/GaAs heterostructures by optical spectroscopy. Journal of Applied Physics, 97(3), -. [033517]. https://doi.org/10.1063/1.1836856
Sun, H D ; Clark, A H ; Calvez, S ; Dawson, M D ; Gilet, P ; Grenouillet, L ; Million, A . / Investigation of phase-separated electronic states in 1.5 mu m GaInNAs/GaAs heterostructures by optical spectroscopy. In: Journal of Applied Physics. 2005 ; Vol. 97, No. 3. pp. -.
@article{c8fdcef28ece4dd195f0da4e94707c8f,
title = "Investigation of phase-separated electronic states in 1.5 mu m GaInNAs/GaAs heterostructures by optical spectroscopy",
abstract = "We report on the comparative electronic state characteristics of particular GaInNAs/GaAs quantum well structures that emit near 1.3 and 1.5 mum wavelength at room temperature. While the electronic structure of the 1.3 mum sample is consistent with a standard quantum well, the 1.5 mum sample demonstrate quite different characteristics. By using photoluminescence (PL) excitation spectroscopy at various detection wavelengths, we demonstrate that the macroscopic electronic states in the 1.5 mum structures originate from phase-separated quantum dots instead of quantum wells. PL measurements with spectrally selective excitation provide further evidence for the existence of composition-separated phases. The evidence is consistent with phase segregation during the growth leading to two phases, one with high In and N content which accounts for the efficient low energy 1.5 mum emission, and the other one having lower In and N content which contributes metastable states and only emits under excitation in a particular wavelength range. (C) 2005 American Institute of Physics.",
keywords = "gaas , molecular beam epitaxy, low nitrogen content, laser diodes, multiquantum wells, carrier localization, energy relaxation, conduction band, quantum dots",
author = "Sun, {H D} and Clark, {A H} and S Calvez and Dawson, {M D} and P Gilet and L Grenouillet and A Million",
year = "2005",
month = "2",
day = "1",
doi = "10.1063/1.1836856",
language = "English",
volume = "97",
pages = "--",
journal = "Journal of Applied Physics",
issn = "0021-8979",
number = "3",

}

Sun, HD, Clark, AH, Calvez, S, Dawson, MD, Gilet, P, Grenouillet, L & Million, A 2005, 'Investigation of phase-separated electronic states in 1.5 mu m GaInNAs/GaAs heterostructures by optical spectroscopy' Journal of Applied Physics, vol. 97, no. 3, 033517, pp. -. https://doi.org/10.1063/1.1836856

Investigation of phase-separated electronic states in 1.5 mu m GaInNAs/GaAs heterostructures by optical spectroscopy. / Sun, H D ; Clark, A H ; Calvez, S ; Dawson, M D ; Gilet, P ; Grenouillet, L ; Million, A .

In: Journal of Applied Physics, Vol. 97, No. 3, 033517, 01.02.2005, p. -.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of phase-separated electronic states in 1.5 mu m GaInNAs/GaAs heterostructures by optical spectroscopy

AU - Sun, H D

AU - Clark, A H

AU - Calvez, S

AU - Dawson, M D

AU - Gilet, P

AU - Grenouillet, L

AU - Million, A

PY - 2005/2/1

Y1 - 2005/2/1

N2 - We report on the comparative electronic state characteristics of particular GaInNAs/GaAs quantum well structures that emit near 1.3 and 1.5 mum wavelength at room temperature. While the electronic structure of the 1.3 mum sample is consistent with a standard quantum well, the 1.5 mum sample demonstrate quite different characteristics. By using photoluminescence (PL) excitation spectroscopy at various detection wavelengths, we demonstrate that the macroscopic electronic states in the 1.5 mum structures originate from phase-separated quantum dots instead of quantum wells. PL measurements with spectrally selective excitation provide further evidence for the existence of composition-separated phases. The evidence is consistent with phase segregation during the growth leading to two phases, one with high In and N content which accounts for the efficient low energy 1.5 mum emission, and the other one having lower In and N content which contributes metastable states and only emits under excitation in a particular wavelength range. (C) 2005 American Institute of Physics.

AB - We report on the comparative electronic state characteristics of particular GaInNAs/GaAs quantum well structures that emit near 1.3 and 1.5 mum wavelength at room temperature. While the electronic structure of the 1.3 mum sample is consistent with a standard quantum well, the 1.5 mum sample demonstrate quite different characteristics. By using photoluminescence (PL) excitation spectroscopy at various detection wavelengths, we demonstrate that the macroscopic electronic states in the 1.5 mum structures originate from phase-separated quantum dots instead of quantum wells. PL measurements with spectrally selective excitation provide further evidence for the existence of composition-separated phases. The evidence is consistent with phase segregation during the growth leading to two phases, one with high In and N content which accounts for the efficient low energy 1.5 mum emission, and the other one having lower In and N content which contributes metastable states and only emits under excitation in a particular wavelength range. (C) 2005 American Institute of Physics.

KW - gaas

KW - molecular beam epitaxy

KW - low nitrogen content

KW - laser diodes

KW - multiquantum wells

KW - carrier localization

KW - energy relaxation

KW - conduction band

KW - quantum dots

U2 - 10.1063/1.1836856

DO - 10.1063/1.1836856

M3 - Article

VL - 97

SP - -

JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 033517

ER -