Investigation of phase-separated electronic states in 1.5µm GaInNAs/GaAs heterostructures by optical spectroscopy

H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report on the comparative electronic state characteristics of particular GaInNAs/GaAs quantum well structures that emit near 1.3 and 1.5 µm wavelength at room temperature. While the electronic structure of the 1.3 µm sample is consistent with a standard quantum well, the 1.5 µm sample
demonstrate quite different characteristics. By using photoluminescence sPLd excitation spectroscopy at various detection wavelengths, we demonstrate that the macroscopic electronic states in the 1.5 µm structures originate from phase-separated quantum dots instead of quantum wells. PL measurements with spectrally selective excitation provide further evidence for the existence of composition-separated phases. The evidence is consistent with phase segregation during the growth leading to two phases, one with high In and N content which accounts for the efficient low energy 1.5 µm emission, and the other one having lower In and N content which contributes metastable states and only emits under excitation in a particular wavelength range.
LanguageEnglish
Article number033517
Pages1-5
Number of pages5
JournalJournal of Applied Physics
Volume97
Early online date11 Jan 2005
DOIs
Publication statusPublished - Jan 2005

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quantum wells
electronics
wavelengths
spectroscopy
excitation
metastable state
quantum dots
electronic structure
photoluminescence
room temperature
energy

Keywords

  • optical spectroscopy
  • photonics

Cite this

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title = "Investigation of phase-separated electronic states in 1.5µm GaInNAs/GaAs heterostructures by optical spectroscopy",
abstract = "We report on the comparative electronic state characteristics of particular GaInNAs/GaAs quantum well structures that emit near 1.3 and 1.5 µm wavelength at room temperature. While the electronic structure of the 1.3 µm sample is consistent with a standard quantum well, the 1.5 µm sampledemonstrate quite different characteristics. By using photoluminescence sPLd excitation spectroscopy at various detection wavelengths, we demonstrate that the macroscopic electronic states in the 1.5 µm structures originate from phase-separated quantum dots instead of quantum wells. PL measurements with spectrally selective excitation provide further evidence for the existence of composition-separated phases. The evidence is consistent with phase segregation during the growth leading to two phases, one with high In and N content which accounts for the efficient low energy 1.5 µm emission, and the other one having lower In and N content which contributes metastable states and only emits under excitation in a particular wavelength range.",
keywords = "optical spectroscopy, photonics",
author = "H.D. Sun and A.H. Clark and S. Calvez and M.D. Dawson",
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Investigation of phase-separated electronic states in 1.5µm GaInNAs/GaAs heterostructures by optical spectroscopy. / Sun, H.D.; Clark, A.H.; Calvez, S.; Dawson, M.D.

In: Journal of Applied Physics, Vol. 97, 033517, 01.2005, p. 1-5.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of phase-separated electronic states in 1.5µm GaInNAs/GaAs heterostructures by optical spectroscopy

AU - Sun, H.D.

AU - Clark, A.H.

AU - Calvez, S.

AU - Dawson, M.D.

PY - 2005/1

Y1 - 2005/1

N2 - We report on the comparative electronic state characteristics of particular GaInNAs/GaAs quantum well structures that emit near 1.3 and 1.5 µm wavelength at room temperature. While the electronic structure of the 1.3 µm sample is consistent with a standard quantum well, the 1.5 µm sampledemonstrate quite different characteristics. By using photoluminescence sPLd excitation spectroscopy at various detection wavelengths, we demonstrate that the macroscopic electronic states in the 1.5 µm structures originate from phase-separated quantum dots instead of quantum wells. PL measurements with spectrally selective excitation provide further evidence for the existence of composition-separated phases. The evidence is consistent with phase segregation during the growth leading to two phases, one with high In and N content which accounts for the efficient low energy 1.5 µm emission, and the other one having lower In and N content which contributes metastable states and only emits under excitation in a particular wavelength range.

AB - We report on the comparative electronic state characteristics of particular GaInNAs/GaAs quantum well structures that emit near 1.3 and 1.5 µm wavelength at room temperature. While the electronic structure of the 1.3 µm sample is consistent with a standard quantum well, the 1.5 µm sampledemonstrate quite different characteristics. By using photoluminescence sPLd excitation spectroscopy at various detection wavelengths, we demonstrate that the macroscopic electronic states in the 1.5 µm structures originate from phase-separated quantum dots instead of quantum wells. PL measurements with spectrally selective excitation provide further evidence for the existence of composition-separated phases. The evidence is consistent with phase segregation during the growth leading to two phases, one with high In and N content which accounts for the efficient low energy 1.5 µm emission, and the other one having lower In and N content which contributes metastable states and only emits under excitation in a particular wavelength range.

KW - optical spectroscopy

KW - photonics

U2 - 10.1063/1.1836856

DO - 10.1063/1.1836856

M3 - Article

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JO - Journal of Applied Physics

T2 - Journal of Applied Physics

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SN - 0021-8979

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