Investigation of ion induced bending mechanism for nanostructures

Nitul S. Rajput, Zhen Tong, Xichun Luo

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Abstract

Ion induced bending is a promising controlled technique for manipulating nanoscale structures. However, the underlying mechanism of the process is not well understood. In this letter, we report a detailed study of the bending mechanism of Si nanowires (NWs) under Ga+ irradiation. The microstructural changes in the NW due to ion beam irradiation are studied and molecular dynamics simulations are used to explore the ion–NW interaction processes. The simulation results are compared with the microstructural studies of the NW. The investigations inform a generic understanding of the bending process in crystalline materials, which we suggest to be feasible as a versatile manipulation and integration technique in nanotechnology.
Original languageEnglish
Article number015002
Number of pages8
JournalMaterials Research Express
Volume2
Issue number1
Early online date24 Dec 2014
DOIs
Publication statusPublished - 2015

Keywords

  • bending mechanism
  • nanostructures
  • crystalline materials

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