Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

Ionut Gîrgel, Paul R. Edwards, Emmanuel Le Boulbar, Pierre-Marie Coulon, Suman-Lata Sahonta, Duncan W. E. Allsopp, Robert W. Martin, Colin J. Humphreys, Philip A. Shields

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Core–shell indium gallium nitride (InGaN)/gallium nitride (GaN) structures are attractive as light emitters due to the large nonpolar surface of rod-like cores with their longitudinal axis aligned along the c-direction. These facets do not suffer from the quantum-confined Stark effect that limits the thickness of quantum wells and efficiency in conventional light-emitting devices. Understanding InGaN growth on these submicron three-dimensional structures is important to optimize optoelectronic device performance. In this work, the influence of reactor parameters was determined and compared. GaN nanorods (NRs) with both {11-20} a-plane and {10-10} m-plane nonpolar facets were prepared to investigate the impact of metalorganic vapor phase epitaxy reactor parameters on the characteristics of a thick (38 to 85 nm) overgrown InGaN shell. The morphology and optical emission properties of the InGaN layers were investigated by scanning electron microscopy, transmission electron microscopy, and cathodoluminescence hyperspectral imaging. The study reveals that reactor pressure has an important impact on the InN mole fraction on the {10-10} m-plane facets, even at a reduced growth rate. The sample grown at 750°C and 100 mbar had an InN mole fraction of 25% on the {10-10} facets of the NRs.
LanguageEnglish
Article number016010
Number of pages11
JournalJournal of Nanophotonics
Volume10
Issue number1
DOIs
Publication statusPublished - 7 Mar 2016

Fingerprint

Gallium nitride
Indium
gallium nitrides
Light emitting diodes
indium
flat surfaces
light emitting diodes
Chemical analysis
reactors
Nanorods
nanorods
Stark effect
optoelectronic devices
Quantum efficiency
Epitaxial growth
Optoelectronic devices
epitaxy
Semiconductor quantum wells
light emission
quantum efficiency

Keywords

  • core-shell
  • indium gallium nitride
  • m-plane
  • a-plane
  • nonpolar
  • cathodoluminescence

Cite this

Gîrgel, Ionut ; Edwards, Paul R. ; Le Boulbar, Emmanuel ; Coulon, Pierre-Marie ; Sahonta, Suman-Lata ; Allsopp, Duncan W. E. ; Martin, Robert W. ; Humphreys, Colin J. ; Shields, Philip A. / Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes. In: Journal of Nanophotonics. 2016 ; Vol. 10, No. 1.
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Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes. / Gîrgel, Ionut; Edwards, Paul R.; Le Boulbar, Emmanuel; Coulon, Pierre-Marie; Sahonta, Suman-Lata; Allsopp, Duncan W. E.; Martin, Robert W.; Humphreys, Colin J.; Shields, Philip A.

In: Journal of Nanophotonics, Vol. 10, No. 1, 016010, 07.03.2016.

Research output: Contribution to journalArticle

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T1 - Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

AU - Gîrgel, Ionut

AU - Edwards, Paul R.

AU - Le Boulbar, Emmanuel

AU - Coulon, Pierre-Marie

AU - Sahonta, Suman-Lata

AU - Allsopp, Duncan W. E.

AU - Martin, Robert W.

AU - Humphreys, Colin J.

AU - Shields, Philip A.

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N2 - Core–shell indium gallium nitride (InGaN)/gallium nitride (GaN) structures are attractive as light emitters due to the large nonpolar surface of rod-like cores with their longitudinal axis aligned along the c-direction. These facets do not suffer from the quantum-confined Stark effect that limits the thickness of quantum wells and efficiency in conventional light-emitting devices. Understanding InGaN growth on these submicron three-dimensional structures is important to optimize optoelectronic device performance. In this work, the influence of reactor parameters was determined and compared. GaN nanorods (NRs) with both {11-20} a-plane and {10-10} m-plane nonpolar facets were prepared to investigate the impact of metalorganic vapor phase epitaxy reactor parameters on the characteristics of a thick (38 to 85 nm) overgrown InGaN shell. The morphology and optical emission properties of the InGaN layers were investigated by scanning electron microscopy, transmission electron microscopy, and cathodoluminescence hyperspectral imaging. The study reveals that reactor pressure has an important impact on the InN mole fraction on the {10-10} m-plane facets, even at a reduced growth rate. The sample grown at 750°C and 100 mbar had an InN mole fraction of 25% on the {10-10} facets of the NRs.

AB - Core–shell indium gallium nitride (InGaN)/gallium nitride (GaN) structures are attractive as light emitters due to the large nonpolar surface of rod-like cores with their longitudinal axis aligned along the c-direction. These facets do not suffer from the quantum-confined Stark effect that limits the thickness of quantum wells and efficiency in conventional light-emitting devices. Understanding InGaN growth on these submicron three-dimensional structures is important to optimize optoelectronic device performance. In this work, the influence of reactor parameters was determined and compared. GaN nanorods (NRs) with both {11-20} a-plane and {10-10} m-plane nonpolar facets were prepared to investigate the impact of metalorganic vapor phase epitaxy reactor parameters on the characteristics of a thick (38 to 85 nm) overgrown InGaN shell. The morphology and optical emission properties of the InGaN layers were investigated by scanning electron microscopy, transmission electron microscopy, and cathodoluminescence hyperspectral imaging. The study reveals that reactor pressure has an important impact on the InN mole fraction on the {10-10} m-plane facets, even at a reduced growth rate. The sample grown at 750°C and 100 mbar had an InN mole fraction of 25% on the {10-10} facets of the NRs.

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