Abstract
| Original language | English |
|---|---|
| Article number | 93631V |
| Number of pages | 8 |
| Journal | Proceedings of SPIE |
| Volume | 9363 |
| DOIs | |
| Publication status | Published - 13 Mar 2015 |
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Keywords
- indium gallium nitride
- light emitting diodes
- nanofibers
- indium nitride
- gallium nitride
- hyperspectral Imaging
- scanning electron microscopy
- metalorganic chemical vapor deposition
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Investigation of facet-dependent InGaN growth for core-shell LEDs. / Gîrgel, Ionut; Edwards, Paul R.; Le Boulbar, Emmanuel; Allsopp, Duncan W. E.; Martin, Robert W.; Shields, Philip A.
In: Proceedings of SPIE, Vol. 9363, 93631V, 13.03.2015.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigation of facet-dependent InGaN growth for core-shell LEDs
AU - Gîrgel, Ionut
AU - Edwards, Paul R.
AU - Le Boulbar, Emmanuel
AU - Allsopp, Duncan W. E.
AU - Martin, Robert W.
AU - Shields, Philip A.
N1 - Copyright 2015 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
PY - 2015/3/13
Y1 - 2015/3/13
N2 - In this work we used vertically aligned GaN nanowires with well-defined crystal facets, i.e. the {11-20} a-plane, {10-10} m-plane, (0001) c-plane and {1-101} semi-polar planes, to investigate the impact of MOVPE reactor parameters on the characteristics of an InGaN layer. The morphology and optical characteristics of the InGaN layers grown of each facet were investigated by cathodoluminescence (CL) hyperspectral imaging and scanning electron microscopy (SEM). The influence of reactor parameters on growth rate and alloy fraction were determined and compared. The study revealed that pressure can have an important impact on the incorporation of InN on the {10-10} m-plane facets. The growth performed at 750°C and 100mbar led to a homogeneous high InN fraction of 25% on the {10-10} facets of the nanowires. This work suggests homogeneous good quality GaN/InGaN core-shell structure could be grown in the near future.
AB - In this work we used vertically aligned GaN nanowires with well-defined crystal facets, i.e. the {11-20} a-plane, {10-10} m-plane, (0001) c-plane and {1-101} semi-polar planes, to investigate the impact of MOVPE reactor parameters on the characteristics of an InGaN layer. The morphology and optical characteristics of the InGaN layers grown of each facet were investigated by cathodoluminescence (CL) hyperspectral imaging and scanning electron microscopy (SEM). The influence of reactor parameters on growth rate and alloy fraction were determined and compared. The study revealed that pressure can have an important impact on the incorporation of InN on the {10-10} m-plane facets. The growth performed at 750°C and 100mbar led to a homogeneous high InN fraction of 25% on the {10-10} facets of the nanowires. This work suggests homogeneous good quality GaN/InGaN core-shell structure could be grown in the near future.
KW - indium gallium nitride
KW - light emitting diodes
KW - nanofibers
KW - indium nitride
KW - gallium nitride
KW - hyperspectral Imaging
KW - scanning electron microscopy
KW - metalorganic chemical vapor deposition
U2 - 10.1117/12.2077625
DO - 10.1117/12.2077625
M3 - Article
VL - 9363
JO - Proceedings of SPIE
JF - Proceedings of SPIE
SN - 0277-786X
M1 - 93631V
ER -