Investigation of facet-dependent InGaN growth for core-shell LEDs

Ionut Gîrgel; Paul R. Edwards; Emmanuel Le Boulbar; Duncan W. E. Allsopp; Robert W. Martin; Philip A. Shields

doi:10.1117/12.2077625

Investigation of facet-dependent InGaN growth for core-shell LEDs

Ionut Gîrgel, Paul R. Edwards, Emmanuel Le Boulbar, Duncan W. E. Allsopp, Robert W. Martin, Philip A. Shields

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Abstract

In this work we used vertically aligned GaN nanowires with well-defined crystal facets, i.e. the {11-20} a-plane, {10-10} m-plane, (0001) c-plane and {1-101} semi-polar planes, to investigate the impact of MOVPE reactor parameters on the characteristics of an InGaN layer. The morphology and optical characteristics of the InGaN layers grown of each facet were investigated by cathodoluminescence (CL) hyperspectral imaging and scanning electron microscopy (SEM). The influence of reactor parameters on growth rate and alloy fraction were determined and compared. The study revealed that pressure can have an important impact on the incorporation of InN on the {10-10} m-plane facets. The growth performed at 750°C and 100mbar led to a homogeneous high InN fraction of 25% on the {10-10} facets of the nanowires. This work suggests homogeneous good quality GaN/InGaN core-shell structure could be grown in the near future.

Original language	English
Article number	93631V
Number of pages	8
Journal	Proceedings of SPIE
Volume	9363
DOIs	https://doi.org/10.1117/12.2077625
Publication status	Published - 13 Mar 2015

Keywords

indium gallium nitride
light emitting diodes
nanofibers
indium nitride
gallium nitride
hyperspectral Imaging
scanning electron microscopy
metalorganic chemical vapor deposition

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Girgel-etal-SPIE-2015-Investigation-of-facet-dependent-InGaN-growthAccepted author manuscript, 664 KB

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Lighting the future
Martin, R. & Skabara, P.
EPSRC (Engineering and Physical Sciences Research Council)
1/12/10 → 30/11/15
Project: Research

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@article{78dd1142790f4306b6993d301eb895ac,

title = "Investigation of facet-dependent InGaN growth for core-shell LEDs",

abstract = "In this work we used vertically aligned GaN nanowires with well-defined crystal facets, i.e. the {11-20} a-plane, {10-10} m-plane, (0001) c-plane and {1-101} semi-polar planes, to investigate the impact of MOVPE reactor parameters on the characteristics of an InGaN layer. The morphology and optical characteristics of the InGaN layers grown of each facet were investigated by cathodoluminescence (CL) hyperspectral imaging and scanning electron microscopy (SEM). The influence of reactor parameters on growth rate and alloy fraction were determined and compared. The study revealed that pressure can have an important impact on the incorporation of InN on the {10-10} m-plane facets. The growth performed at 750°C and 100mbar led to a homogeneous high InN fraction of 25% on the {10-10} facets of the nanowires. This work suggests homogeneous good quality GaN/InGaN core-shell structure could be grown in the near future. ",

keywords = "indium gallium nitride, light emitting diodes, nanofibers, indium nitride, gallium nitride, hyperspectral Imaging, scanning electron microscopy, metalorganic chemical vapor deposition",

author = "Ionut G{\^i}rgel and Edwards, {Paul R.} and {Le Boulbar}, Emmanuel and Allsopp, {Duncan W. E.} and Martin, {Robert W.} and Shields, {Philip A.}",

note = " Copyright 2015 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. ",

year = "2015",

month = mar,

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doi = "10.1117/12.2077625",

language = "English",

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journal = "Proceedings of SPIE",

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T1 - Investigation of facet-dependent InGaN growth for core-shell LEDs

AU - Gîrgel, Ionut

AU - Edwards, Paul R.

AU - Le Boulbar, Emmanuel

AU - Allsopp, Duncan W. E.

AU - Martin, Robert W.

AU - Shields, Philip A.

N1 - Copyright 2015 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

PY - 2015/3/13

Y1 - 2015/3/13

N2 - In this work we used vertically aligned GaN nanowires with well-defined crystal facets, i.e. the {11-20} a-plane, {10-10} m-plane, (0001) c-plane and {1-101} semi-polar planes, to investigate the impact of MOVPE reactor parameters on the characteristics of an InGaN layer. The morphology and optical characteristics of the InGaN layers grown of each facet were investigated by cathodoluminescence (CL) hyperspectral imaging and scanning electron microscopy (SEM). The influence of reactor parameters on growth rate and alloy fraction were determined and compared. The study revealed that pressure can have an important impact on the incorporation of InN on the {10-10} m-plane facets. The growth performed at 750°C and 100mbar led to a homogeneous high InN fraction of 25% on the {10-10} facets of the nanowires. This work suggests homogeneous good quality GaN/InGaN core-shell structure could be grown in the near future.

AB - In this work we used vertically aligned GaN nanowires with well-defined crystal facets, i.e. the {11-20} a-plane, {10-10} m-plane, (0001) c-plane and {1-101} semi-polar planes, to investigate the impact of MOVPE reactor parameters on the characteristics of an InGaN layer. The morphology and optical characteristics of the InGaN layers grown of each facet were investigated by cathodoluminescence (CL) hyperspectral imaging and scanning electron microscopy (SEM). The influence of reactor parameters on growth rate and alloy fraction were determined and compared. The study revealed that pressure can have an important impact on the incorporation of InN on the {10-10} m-plane facets. The growth performed at 750°C and 100mbar led to a homogeneous high InN fraction of 25% on the {10-10} facets of the nanowires. This work suggests homogeneous good quality GaN/InGaN core-shell structure could be grown in the near future.

KW - indium gallium nitride

KW - light emitting diodes

KW - nanofibers

KW - indium nitride

KW - gallium nitride

KW - hyperspectral Imaging

KW - scanning electron microscopy

KW - metalorganic chemical vapor deposition

U2 - 10.1117/12.2077625

DO - 10.1117/12.2077625

M3 - Article

VL - 9363

JO - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

M1 - 93631V

ER -

Investigation of facet-dependent InGaN growth for core-shell LEDs

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