Investigation of facet-dependent InGaN growth for core-shell LEDs

Ionut Gîrgel, Paul R. Edwards, Emmanuel Le Boulbar, Duncan W. E. Allsopp, Robert W. Martin, Philip A. Shields

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this work we used vertically aligned GaN nanowires with well-defined crystal facets, i.e. the {11-20} a-plane, {10-10} m-plane, (0001) c-plane and {1-101} semi-polar planes, to investigate the impact of MOVPE reactor parameters on the characteristics of an InGaN layer. The morphology and optical characteristics of the InGaN layers grown of each facet were investigated by cathodoluminescence (CL) hyperspectral imaging and scanning electron microscopy (SEM). The influence of reactor parameters on growth rate and alloy fraction were determined and compared. The study revealed that pressure can have an important impact on the incorporation of InN on the {10-10} m-plane facets. The growth performed at 750°C and 100mbar led to a homogeneous high InN fraction of 25% on the {10-10} facets of the nanowires. This work suggests homogeneous good quality GaN/InGaN core-shell structure could be grown in the near future.
LanguageEnglish
Article number93631V
Number of pages8
JournalProceedings of SPIE
Volume9363
DOIs
Publication statusPublished - 13 Mar 2015

Fingerprint

InGaN
Facet
Nanowires
Light emitting diodes
flat surfaces
Shell
light emitting diodes
Metallorganic vapor phase epitaxy
Cathodoluminescence
Dependent
nanowires
Reactor
reactors
Crystals
Scanning electron microscopy
cathodoluminescence
Hyperspectral Imaging
Shell Structure
Scanning Electron Microscopy
Well-defined

Keywords

  • indium gallium nitride
  • light emitting diodes
  • nanofibers
  • indium nitride
  • gallium nitride
  • hyperspectral Imaging
  • scanning electron microscopy
  • metalorganic chemical vapor deposition

Cite this

Gîrgel, Ionut ; Edwards, Paul R. ; Le Boulbar, Emmanuel ; Allsopp, Duncan W. E. ; Martin, Robert W. ; Shields, Philip A. / Investigation of facet-dependent InGaN growth for core-shell LEDs. In: Proceedings of SPIE. 2015 ; Vol. 9363.
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abstract = "In this work we used vertically aligned GaN nanowires with well-defined crystal facets, i.e. the {11-20} a-plane, {10-10} m-plane, (0001) c-plane and {1-101} semi-polar planes, to investigate the impact of MOVPE reactor parameters on the characteristics of an InGaN layer. The morphology and optical characteristics of the InGaN layers grown of each facet were investigated by cathodoluminescence (CL) hyperspectral imaging and scanning electron microscopy (SEM). The influence of reactor parameters on growth rate and alloy fraction were determined and compared. The study revealed that pressure can have an important impact on the incorporation of InN on the {10-10} m-plane facets. The growth performed at 750°C and 100mbar led to a homogeneous high InN fraction of 25{\%} on the {10-10} facets of the nanowires. This work suggests homogeneous good quality GaN/InGaN core-shell structure could be grown in the near future.",
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Investigation of facet-dependent InGaN growth for core-shell LEDs. / Gîrgel, Ionut; Edwards, Paul R.; Le Boulbar, Emmanuel; Allsopp, Duncan W. E.; Martin, Robert W.; Shields, Philip A.

In: Proceedings of SPIE, Vol. 9363, 93631V, 13.03.2015.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of facet-dependent InGaN growth for core-shell LEDs

AU - Gîrgel, Ionut

AU - Edwards, Paul R.

AU - Le Boulbar, Emmanuel

AU - Allsopp, Duncan W. E.

AU - Martin, Robert W.

AU - Shields, Philip A.

N1 - Copyright 2015 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

PY - 2015/3/13

Y1 - 2015/3/13

N2 - In this work we used vertically aligned GaN nanowires with well-defined crystal facets, i.e. the {11-20} a-plane, {10-10} m-plane, (0001) c-plane and {1-101} semi-polar planes, to investigate the impact of MOVPE reactor parameters on the characteristics of an InGaN layer. The morphology and optical characteristics of the InGaN layers grown of each facet were investigated by cathodoluminescence (CL) hyperspectral imaging and scanning electron microscopy (SEM). The influence of reactor parameters on growth rate and alloy fraction were determined and compared. The study revealed that pressure can have an important impact on the incorporation of InN on the {10-10} m-plane facets. The growth performed at 750°C and 100mbar led to a homogeneous high InN fraction of 25% on the {10-10} facets of the nanowires. This work suggests homogeneous good quality GaN/InGaN core-shell structure could be grown in the near future.

AB - In this work we used vertically aligned GaN nanowires with well-defined crystal facets, i.e. the {11-20} a-plane, {10-10} m-plane, (0001) c-plane and {1-101} semi-polar planes, to investigate the impact of MOVPE reactor parameters on the characteristics of an InGaN layer. The morphology and optical characteristics of the InGaN layers grown of each facet were investigated by cathodoluminescence (CL) hyperspectral imaging and scanning electron microscopy (SEM). The influence of reactor parameters on growth rate and alloy fraction were determined and compared. The study revealed that pressure can have an important impact on the incorporation of InN on the {10-10} m-plane facets. The growth performed at 750°C and 100mbar led to a homogeneous high InN fraction of 25% on the {10-10} facets of the nanowires. This work suggests homogeneous good quality GaN/InGaN core-shell structure could be grown in the near future.

KW - indium gallium nitride

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KW - hyperspectral Imaging

KW - scanning electron microscopy

KW - metalorganic chemical vapor deposition

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