Investigation of electrical, structural, and optical properties of very thin oxide/a-Si:H/c-Si interfaces passivated by cyanide treatment

E. Pincik, H. Kobayashi, S. Jurecka, M. Jergel , H. Gleskova, M. Takahashi, R. Brunner, N. Fujiwara, J. Mullerova

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

This chapter looks at the investigation of electrical, structural, and optical properties of very thin oxide/a-Si:H/c-Si interfaces passivated by cyanide treatment
Original languageEnglish
Title of host publicationProccedings of the fifth international conference on thin film physics and applications
EditorsJ. Chu, Z. Lai, L. Wang, S. Xu
Place of PublicationBellingham, WA
Pages481-488
Number of pages8
Volume5774
Publication statusPublished - 2004
EventFifth International Conference on Thin Film Physics and Applications - Shanghai, China
Duration: 31 May 20042 Jun 2004

Conference

ConferenceFifth International Conference on Thin Film Physics and Applications
CountryChina
CityShanghai
Period31/05/042/06/04

Keywords

  • investigation
  • electrical
  • structural
  • optical properties
  • very thin oxide
  • cyanide treatment

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