Intrinsic stress, island coalescence, and surface roughness during the growth of polycrystalline films

B. W. Sheldon, K. H. A. Lau, A. Rajamani

Research output: Contribution to journalArticle

83 Citations (Scopus)

Abstract

During film growth by a variety of techniques, intrinsic tensile stresses can be created by the coalescence of neighboring islands. Experimental results with diamond films produced by chemical vapor deposition are compared with a relatively simple model to demonstrate that a realistic interpretation of these coalescence stresses must account for effects that are associated with surface roughness. First, the interpretation of curvature measurements during the early stages of film growth must account for this surface roughness. Also, the experiments show that tensile stresses are induced by grain boundary formation during continuing growth after the initial island coalescence event. This understanding differs from the traditional interpretation that continuing intrinsic stress is produced by "templated" growth onto an already strained crystalline lattice. A kinetic model of stress evolution during postcoalescence growth is also presented. (C) 2001 American Institute of Physics.
LanguageEnglish
Pages5097-5103
Number of pages7
JournalJournal of Applied Physics
Volume90
DOIs
Publication statusPublished - 2001

Fingerprint

Coalescence
coalescing
surface roughness
Surface roughness
Film growth
Tensile stress
tensile stress
Diamond films
Crystal lattices
Chemical vapor deposition
Grain boundaries
Crystalline materials
Kinetics
diamond films
grain boundaries
curvature
vapor deposition
Experiments
kinetics

Keywords

  • deposition origins
  • tilt
  • grain-boundaries
  • diamond films
  • thin-films
  • atomistic simulations
  • mechanical-properties
  • internal-stress
  • cvd
  • diamond
  • gold-films

Cite this

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Intrinsic stress, island coalescence, and surface roughness during the growth of polycrystalline films. / Sheldon, B. W.; Lau, K. H. A.; Rajamani, A.

In: Journal of Applied Physics, Vol. 90, 2001, p. 5097-5103.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Intrinsic stress, island coalescence, and surface roughness during the growth of polycrystalline films

AU - Sheldon, B. W.

AU - Lau, K. H. A.

AU - Rajamani, A.

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PY - 2001

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AB - During film growth by a variety of techniques, intrinsic tensile stresses can be created by the coalescence of neighboring islands. Experimental results with diamond films produced by chemical vapor deposition are compared with a relatively simple model to demonstrate that a realistic interpretation of these coalescence stresses must account for effects that are associated with surface roughness. First, the interpretation of curvature measurements during the early stages of film growth must account for this surface roughness. Also, the experiments show that tensile stresses are induced by grain boundary formation during continuing growth after the initial island coalescence event. This understanding differs from the traditional interpretation that continuing intrinsic stress is produced by "templated" growth onto an already strained crystalline lattice. A kinetic model of stress evolution during postcoalescence growth is also presented. (C) 2001 American Institute of Physics.

KW - deposition origins

KW - tilt

KW - grain-boundaries

KW - diamond films

KW - thin-films

KW - atomistic simulations

KW - mechanical-properties

KW - internal-stress

KW - cvd

KW - diamond

KW - gold-films

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