Interstitial H2 in germanium by Raman scattering and ab initio calculations

M. Hiller, E.V. Lavrov, J. Weber, B. Hourahine, R. Jones, P.R. Briddon

Research output: Contribution to journalArticle

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Abstract

Single-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K reveal two sharp lines at 3826 and 3834 cm−1 with an intensity ratio of 3:1, which are assigned to ortho- and para-H2 trapped at the interstitial T site of the lattice.
LanguageEnglish
Pages153201-1
Number of pages153200
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume72
Issue number2005
DOIs
Publication statusPublished - 9 Oct 2005

Fingerprint

Germanium
Raman scattering
Hydrogen
germanium
interstitials
Raman spectra
deuterium plasma
Deuterium
hydrogen
wafers
Scattering
Crystalline materials
Plasmas
scattering
Temperature
temperature

Keywords

  • single-crystalline germanium wafers
  • Raman scattering
  • ab initio calculations
  • nanoscience

Cite this

Hiller, M. ; Lavrov, E.V. ; Weber, J. ; Hourahine, B. ; Jones, R. ; Briddon, P.R. / Interstitial H2 in germanium by Raman scattering and ab initio calculations. In: Physical Review B: Condensed Matter and Materials Physics. 2005 ; Vol. 72, No. 2005. pp. 153201-1.
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Interstitial H2 in germanium by Raman scattering and ab initio calculations. / Hiller, M.; Lavrov, E.V.; Weber, J.; Hourahine, B.; Jones, R.; Briddon, P.R.

In: Physical Review B: Condensed Matter and Materials Physics, Vol. 72, No. 2005, 09.10.2005, p. 153201-1.

Research output: Contribution to journalArticle

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AU - Lavrov, E.V.

AU - Weber, J.

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AU - Jones, R.

AU - Briddon, P.R.

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KW - ab initio calculations

KW - nanoscience

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