Single-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K reveal two sharp lines at 3826 and 3834 cm−1 with an intensity ratio of 3:1, which are assigned to ortho- and para-H2 trapped at the interstitial T site of the lattice.
|Number of pages||153200|
|Journal||Physical Review B: Condensed Matter and Materials Physics|
|Publication status||Published - 9 Oct 2005|
- single-crystalline germanium wafers
- Raman scattering
- ab initio calculations