Interstitial H2 in germanium by Raman scattering and ab initio calculations

M. Hiller, E.V. Lavrov, J. Weber, B. Hourahine, R. Jones, P.R. Briddon

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Single-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K reveal two sharp lines at 3826 and 3834 cm−1 with an intensity ratio of 3:1, which are assigned to ortho- and para-H2 trapped at the interstitial T site of the lattice.
Original languageEnglish
Pages (from-to)153201-1
Number of pages153200
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume72
Issue number2005
DOIs
Publication statusPublished - 9 Oct 2005

Keywords

  • single-crystalline germanium wafers
  • Raman scattering
  • ab initio calculations
  • nanoscience

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