Interstitial H2 in germanium by Raman scattering and ab initio calculations

M. Hiller; E.V. Lavrov; J. Weber; B. Hourahine; R. Jones; P.R. Briddon

doi:10.1103/PhysRevB.72.153201

Interstitial H2 in germanium by Raman scattering and ab initio calculations

M. Hiller, E.V. Lavrov, J. Weber, B. Hourahine, R. Jones, P.R. Briddon

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Single-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K reveal two sharp lines at 3826 and 3834 cm−1 with an intensity ratio of 3:1, which are assigned to ortho- and para-H2 trapped at the interstitial T site of the lattice.

Original language	English
Pages (from-to)	153201-1
Number of pages	153200
Journal	Physical Review B: Condensed Matter and Materials Physics
Volume	72
Issue number	2005
DOIs	https://doi.org/10.1103/PhysRevB.72.153201
Publication status	Published - 9 Oct 2005

Keywords

single-crystalline germanium wafers
Raman scattering
ab initio calculations
nanoscience

Access to Document

10.1103/PhysRevB.72.153201

Cite this

@article{948fb612353b4df3b50f4b70e569c132,

title = "Interstitial H2 in germanium by Raman scattering and ab initio calculations",

abstract = "Single-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K reveal two sharp lines at 3826 and 3834 cm−1 with an intensity ratio of 3:1, which are assigned to ortho- and para-H2 trapped at the interstitial T site of the lattice.",

keywords = "single-crystalline germanium wafers, Raman scattering, ab initio calculations, nanoscience",

author = "M. Hiller and E.V. Lavrov and J. Weber and B. Hourahine and R. Jones and P.R. Briddon",

year = "2005",

month = oct,

day = "9",

doi = "10.1103/PhysRevB.72.153201",

language = "English",

volume = "72",

pages = "153201--1",

journal = "Physical Review B: Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "2005",

}

TY - JOUR

T1 - Interstitial H2 in germanium by Raman scattering and ab initio calculations

AU - Hiller, M.

AU - Lavrov, E.V.

AU - Weber, J.

AU - Hourahine, B.

AU - Jones, R.

AU - Briddon, P.R.

PY - 2005/10/9

Y1 - 2005/10/9

N2 - Single-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K reveal two sharp lines at 3826 and 3834 cm−1 with an intensity ratio of 3:1, which are assigned to ortho- and para-H2 trapped at the interstitial T site of the lattice.

AB - Single-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K reveal two sharp lines at 3826 and 3834 cm−1 with an intensity ratio of 3:1, which are assigned to ortho- and para-H2 trapped at the interstitial T site of the lattice.

KW - single-crystalline germanium wafers

KW - Raman scattering

KW - ab initio calculations

KW - nanoscience

UR - http://dx.doi.org/10.1103/PhysRevB.72.153201

U2 - 10.1103/PhysRevB.72.153201

DO - 10.1103/PhysRevB.72.153201

M3 - Article

SN - 1098-0121

VL - 72

SP - 153201

EP - 153201

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

IS - 2005

ER -

Interstitial H2 in germanium by Raman scattering and ab initio calculations

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this