Interdiffusion in wide-bandgap Zn(Cd)S(Se) strained layer superlattices

P. J. Parbrook; B. Henderson; K. P. O'Donnell; P. J. Wright; B. Cockayne

doi:10.1088/0268-1242/6/8/019

Interdiffusion in wide-bandgap Zn(Cd)S(Se) strained layer superlattices

P. J. Parbrook, B. Henderson, K. P. O'Donnell, P. J. Wright, B. Cockayne

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19 Citations (Scopus)

Abstract

The extent of interdiffusion in wide-bandgap II-VI superlattices of Zn-ZnSe, ZnSe-CdSe and ZnS-CdS grown at low temperature is assessed by measuring the photoluminescence spectra and X-ray diffraction profiles of samples annealed in the temperature range from 300 to 550 degrees C. It is shown that although Zn-ZnSe superlattices are stable against anion interdiffusion over the entire temperature range, the common-anion systems ZnSe-CdSe and ZnS-CdS show evidence of disordering at anneal temperatures greater than 400 and 450 degrees C respectively. These results confirm that the common-anion binary superlattices are stable against interdiffusion at low growth temperature.

Original language	English
Article number	019
Pages (from-to)	818-821
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	6
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/6/8/019
Publication status	Published - 1 Aug 1991

Keywords

superlatticeds
strained layer superlattice
photoluminescence spectroscopy

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10.1088/0268-1242/6/8/019

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abstract = "The extent of interdiffusion in wide-bandgap II-VI superlattices of Zn-ZnSe, ZnSe-CdSe and ZnS-CdS grown at low temperature is assessed by measuring the photoluminescence spectra and X-ray diffraction profiles of samples annealed in the temperature range from 300 to 550 degrees C. It is shown that although Zn-ZnSe superlattices are stable against anion interdiffusion over the entire temperature range, the common-anion systems ZnSe-CdSe and ZnS-CdS show evidence of disordering at anneal temperatures greater than 400 and 450 degrees C respectively. These results confirm that the common-anion binary superlattices are stable against interdiffusion at low growth temperature.",

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AU - Parbrook, P. J.

AU - Henderson, B.

AU - O'Donnell, K. P.

AU - Wright, P. J.

AU - Cockayne, B.

PY - 1991/8/1

Y1 - 1991/8/1

N2 - The extent of interdiffusion in wide-bandgap II-VI superlattices of Zn-ZnSe, ZnSe-CdSe and ZnS-CdS grown at low temperature is assessed by measuring the photoluminescence spectra and X-ray diffraction profiles of samples annealed in the temperature range from 300 to 550 degrees C. It is shown that although Zn-ZnSe superlattices are stable against anion interdiffusion over the entire temperature range, the common-anion systems ZnSe-CdSe and ZnS-CdS show evidence of disordering at anneal temperatures greater than 400 and 450 degrees C respectively. These results confirm that the common-anion binary superlattices are stable against interdiffusion at low growth temperature.

AB - The extent of interdiffusion in wide-bandgap II-VI superlattices of Zn-ZnSe, ZnSe-CdSe and ZnS-CdS grown at low temperature is assessed by measuring the photoluminescence spectra and X-ray diffraction profiles of samples annealed in the temperature range from 300 to 550 degrees C. It is shown that although Zn-ZnSe superlattices are stable against anion interdiffusion over the entire temperature range, the common-anion systems ZnSe-CdSe and ZnS-CdS show evidence of disordering at anneal temperatures greater than 400 and 450 degrees C respectively. These results confirm that the common-anion binary superlattices are stable against interdiffusion at low growth temperature.

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Interdiffusion in wide-bandgap Zn(Cd)S(Se) strained layer superlattices

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Keywords

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