Interdiffusion in wide-bandgap Zn(Cd)S(Se) strained layer superlattices

P. J. Parbrook, B. Henderson, K. P. O'Donnell, P. J. Wright, B. Cockayne

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19 Citations (Scopus)


The extent of interdiffusion in wide-bandgap II-VI superlattices of Zn-ZnSe, ZnSe-CdSe and ZnS-CdS grown at low temperature is assessed by measuring the photoluminescence spectra and X-ray diffraction profiles of samples annealed in the temperature range from 300 to 550 degrees C. It is shown that although Zn-ZnSe superlattices are stable against anion interdiffusion over the entire temperature range, the common-anion systems ZnSe-CdSe and ZnS-CdS show evidence of disordering at anneal temperatures greater than 400 and 450 degrees C respectively. These results confirm that the common-anion binary superlattices are stable against interdiffusion at low growth temperature.

Original languageEnglish
Article number019
Pages (from-to)818-821
Number of pages4
JournalSemiconductor Science and Technology
Issue number8
Publication statusPublished - 1 Aug 1991


  • superlatticeds
  • strained layer superlattice
  • photoluminescence spectroscopy


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