Interdiffusion in wide-bandgap Zn(Cd)S(Se) strained layer superlattices

P. J. Parbrook; B. Henderson; K. P. O'Donnell; P. J. Wright; B. Cockayne

doi:10.1088/0268-1242/6/8/019

Interdiffusion in wide-bandgap Zn(Cd)S(Se) strained layer superlattices

P. J. Parbrook, B. Henderson, K. P. O'Donnell, P. J. Wright, B. Cockayne

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19 Citations (Scopus)

Abstract

The extent of interdiffusion in wide-bandgap II-VI superlattices of Zn-ZnSe, ZnSe-CdSe and ZnS-CdS grown at low temperature is assessed by measuring the photoluminescence spectra and X-ray diffraction profiles of samples annealed in the temperature range from 300 to 550 degrees C. It is shown that although Zn-ZnSe superlattices are stable against anion interdiffusion over the entire temperature range, the common-anion systems ZnSe-CdSe and ZnS-CdS show evidence of disordering at anneal temperatures greater than 400 and 450 degrees C respectively. These results confirm that the common-anion binary superlattices are stable against interdiffusion at low growth temperature.

Original language	English
Article number	019
Pages (from-to)	818-821
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	6
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/6/8/019
Publication status	Published - 1 Aug 1991

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Keywords

superlatticeds
strained layer superlattice
photoluminescence spectroscopy

Cite this

Parbrook, P. J., Henderson, B., O'Donnell, K. P., Wright, P. J., & Cockayne, B. (1991). Interdiffusion in wide-bandgap Zn(Cd)S(Se) strained layer superlattices. Semiconductor Science and Technology, 6(8), 818-821. [019]. https://doi.org/10.1088/0268-1242/6/8/019

@article{f6d6b86856b04a6480d9f540bb018c02,

title = "Interdiffusion in wide-bandgap Zn(Cd)S(Se) strained layer superlattices",

abstract = "The extent of interdiffusion in wide-bandgap II-VI superlattices of Zn-ZnSe, ZnSe-CdSe and ZnS-CdS grown at low temperature is assessed by measuring the photoluminescence spectra and X-ray diffraction profiles of samples annealed in the temperature range from 300 to 550 degrees C. It is shown that although Zn-ZnSe superlattices are stable against anion interdiffusion over the entire temperature range, the common-anion systems ZnSe-CdSe and ZnS-CdS show evidence of disordering at anneal temperatures greater than 400 and 450 degrees C respectively. These results confirm that the common-anion binary superlattices are stable against interdiffusion at low growth temperature.",

keywords = "superlatticeds, strained layer superlattice, photoluminescence spectroscopy",

author = "Parbrook, {P. J.} and B. Henderson and O'Donnell, {K. P.} and Wright, {P. J.} and B. Cockayne",

year = "1991",

month = "8",

day = "1",

doi = "10.1088/0268-1242/6/8/019",

language = "English",

volume = "6",

pages = "818--821",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

number = "8",

}

TY - JOUR

T1 - Interdiffusion in wide-bandgap Zn(Cd)S(Se) strained layer superlattices

AU - Parbrook, P. J.

AU - Henderson, B.

AU - O'Donnell, K. P.

AU - Wright, P. J.

AU - Cockayne, B.

PY - 1991/8/1

Y1 - 1991/8/1

N2 - The extent of interdiffusion in wide-bandgap II-VI superlattices of Zn-ZnSe, ZnSe-CdSe and ZnS-CdS grown at low temperature is assessed by measuring the photoluminescence spectra and X-ray diffraction profiles of samples annealed in the temperature range from 300 to 550 degrees C. It is shown that although Zn-ZnSe superlattices are stable against anion interdiffusion over the entire temperature range, the common-anion systems ZnSe-CdSe and ZnS-CdS show evidence of disordering at anneal temperatures greater than 400 and 450 degrees C respectively. These results confirm that the common-anion binary superlattices are stable against interdiffusion at low growth temperature.

AB - The extent of interdiffusion in wide-bandgap II-VI superlattices of Zn-ZnSe, ZnSe-CdSe and ZnS-CdS grown at low temperature is assessed by measuring the photoluminescence spectra and X-ray diffraction profiles of samples annealed in the temperature range from 300 to 550 degrees C. It is shown that although Zn-ZnSe superlattices are stable against anion interdiffusion over the entire temperature range, the common-anion systems ZnSe-CdSe and ZnS-CdS show evidence of disordering at anneal temperatures greater than 400 and 450 degrees C respectively. These results confirm that the common-anion binary superlattices are stable against interdiffusion at low growth temperature.

KW - superlatticeds

KW - strained layer superlattice

KW - photoluminescence spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0026206587&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/6/8/019

DO - 10.1088/0268-1242/6/8/019

M3 - Article

AN - SCOPUS:0026206587

VL - 6

SP - 818

EP - 821

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 8

M1 - 019

ER -

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10.1088/0268-1242/6/8/019

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