Abstract
The extent of interdiffusion in wide-bandgap II-VI superlattices of Zn-ZnSe, ZnSe-CdSe and ZnS-CdS grown at low temperature is assessed by measuring the photoluminescence spectra and X-ray diffraction profiles of samples annealed in the temperature range from 300 to 550 degrees C. It is shown that although Zn-ZnSe superlattices are stable against anion interdiffusion over the entire temperature range, the common-anion systems ZnSe-CdSe and ZnS-CdS show evidence of disordering at anneal temperatures greater than 400 and 450 degrees C respectively. These results confirm that the common-anion binary superlattices are stable against interdiffusion at low growth temperature.
Original language | English |
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Article number | 019 |
Pages (from-to) | 818-821 |
Number of pages | 4 |
Journal | Semiconductor Science and Technology |
Volume | 6 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1 Aug 1991 |
Keywords
- superlatticeds
- strained layer superlattice
- photoluminescence spectroscopy