Integration of Trench Power Transistors into a 1.5 um BCD Process

Terry Dyer (Inventor), Jim McGinty (Inventor), Andrew Strachan (Inventor), Constantin Bulucea (Inventor)

Research output: Patent

Abstract

The formation of vertical trench DMOS devices can be added to existing integrated BCD process flows in order to improve the efficiency of the BCD devices. The formation of this trench DMOS varies from existing approaches used with discrete trench DMOS devices, in that only two extra mask steps are added to the existing BCD process, instead of the 10 or so mask steps used in existing discrete trench DMOS processes. Further, the location of these additional heat cycles in the BCD process steps can be placed so as to have minimal impact on the other components created in the process. Utilizing an integrated trench device in a BCD process can offer at least a factor-of-two R<SUB>DS(ON) </SUB>area advantage over a planar counterpart.
Original languageEnglish
Patent numberUS 7067879 B1
IPCH01L29/72
Priority date28/05/04
Publication statusPublished - 27 Jun 2006

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transistors
masks
heat
cycles

Keywords

  • CMOS transistor
  • DMOS transistor
  • verticle trench DMOS device

Cite this

Dyer, T., McGinty, J., Strachan, A., & Bulucea, C. (2006). IPC No. H01L29/72. Integration of Trench Power Transistors into a 1.5 um BCD Process. (Patent No. US 7067879 B1).
Dyer, Terry (Inventor) ; McGinty, Jim (Inventor) ; Strachan, Andrew (Inventor) ; Bulucea, Constantin (Inventor). / Integration of Trench Power Transistors into a 1.5 um BCD Process. IPC No.: H01L29/72. Patent No.: US 7067879 B1.
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abstract = "The formation of vertical trench DMOS devices can be added to existing integrated BCD process flows in order to improve the efficiency of the BCD devices. The formation of this trench DMOS varies from existing approaches used with discrete trench DMOS devices, in that only two extra mask steps are added to the existing BCD process, instead of the 10 or so mask steps used in existing discrete trench DMOS processes. Further, the location of these additional heat cycles in the BCD process steps can be placed so as to have minimal impact on the other components created in the process. Utilizing an integrated trench device in a BCD process can offer at least a factor-of-two R<SUB>DS(ON) area advantage over a planar counterpart.",
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Dyer, T, McGinty, J, Strachan, A & Bulucea, C 2006, Integration of Trench Power Transistors into a 1.5 um BCD Process, Patent No. US 7067879 B1, IPC No. H01L29/72.

Integration of Trench Power Transistors into a 1.5 um BCD Process. / Dyer, Terry (Inventor); McGinty, Jim (Inventor); Strachan, Andrew (Inventor); Bulucea, Constantin (Inventor).

IPC No.: H01L29/72. Patent No.: US 7067879 B1.

Research output: Patent

TY - PAT

T1 - Integration of Trench Power Transistors into a 1.5 um BCD Process

AU - Dyer, Terry

AU - McGinty, Jim

AU - Strachan, Andrew

AU - Bulucea, Constantin

PY - 2006/6/27

Y1 - 2006/6/27

N2 - The formation of vertical trench DMOS devices can be added to existing integrated BCD process flows in order to improve the efficiency of the BCD devices. The formation of this trench DMOS varies from existing approaches used with discrete trench DMOS devices, in that only two extra mask steps are added to the existing BCD process, instead of the 10 or so mask steps used in existing discrete trench DMOS processes. Further, the location of these additional heat cycles in the BCD process steps can be placed so as to have minimal impact on the other components created in the process. Utilizing an integrated trench device in a BCD process can offer at least a factor-of-two R<SUB>DS(ON) area advantage over a planar counterpart.

AB - The formation of vertical trench DMOS devices can be added to existing integrated BCD process flows in order to improve the efficiency of the BCD devices. The formation of this trench DMOS varies from existing approaches used with discrete trench DMOS devices, in that only two extra mask steps are added to the existing BCD process, instead of the 10 or so mask steps used in existing discrete trench DMOS processes. Further, the location of these additional heat cycles in the BCD process steps can be placed so as to have minimal impact on the other components created in the process. Utilizing an integrated trench device in a BCD process can offer at least a factor-of-two R<SUB>DS(ON) area advantage over a planar counterpart.

KW - CMOS transistor

KW - DMOS transistor

KW - verticle trench DMOS device

UR - https://patents.google.com/patent/US7067879

M3 - Patent

M1 - US 7067879 B1

ER -

Dyer T, McGinty J, Strachan A, Bulucea C, inventors. Integration of Trench Power Transistors into a 1.5 um BCD Process. H01L29/72. 2006 Jun 27.