InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm

Peter Schlosser; Jennifer Hastie; Stephane Calvez; A.B. Krysa; Martin Dawson

doi:10.1109/LEOS.2009.5343357

InP/GaInP quantum dot semiconductor disk laser for TEM₀₀ emission at 740 nm

Peter Schlosser, Jennifer Hastie, Stephane Calvez, A.B. Krysa, Martin Dawson

Research output: Contribution to conference › Proceeding › peer-review

Abstract

InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.

Original language	English
Pages	743-744
Number of pages	2
DOIs	https://doi.org/10.1109/LEOS.2009.5343357
Publication status	Published - 2009
Event	Annual Meeting of the IEEE Photonics Society - Belek-Antalya, Turkey Duration: 4 Oct 2009 → …

Conference

Conference	Annual Meeting of the IEEE Photonics Society
Country	Turkey
City	Belek-Antalya
Period	4/10/09 → …

Keywords

photonics
semiconductor disk laser
InGaN laser source

Access to Document

10.1109/LEOS.2009.5343357

1 Finished

INP/AIGALNP QUANTUM DOT LASERS FOR 650-780NM EMISSION
Hastie, J., Calvez, S. & Dawson, M.
EPSRC (Engineering and Physical Sciences Research Council)
1/10/07 → 30/09/10
Project: Research

Cite this

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title = "InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm",

abstract = "InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.",

keywords = "photonics, semiconductor disk laser , InGaN laser source",

author = "Peter Schlosser and Jennifer Hastie and Stephane Calvez and A.B. Krysa and Martin Dawson",

year = "2009",

doi = "10.1109/LEOS.2009.5343357",

language = "English",

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note = "Annual Meeting of the IEEE Photonics Society ; Conference date: 04-10-2009",

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T1 - InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm

AU - Schlosser, Peter

AU - Hastie, Jennifer

AU - Calvez, Stephane

AU - Krysa, A.B.

AU - Dawson, Martin

PY - 2009

Y1 - 2009

N2 - InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.

AB - InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.

KW - photonics

KW - semiconductor disk laser

KW - InGaN laser source

U2 - 10.1109/LEOS.2009.5343357

DO - 10.1109/LEOS.2009.5343357

M3 - Proceeding

SP - 743

EP - 744

T2 - Annual Meeting of the IEEE Photonics Society

Y2 - 4 October 2009

ER -