InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm

Peter Schlosser, Jennifer Hastie, Stephane Calvez, A.B. Krysa, Martin Dawson

Research output: Contribution to conferenceProceeding

Abstract

InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.
Original languageEnglish
Pages743-744
Number of pages2
DOIs
Publication statusPublished - 2009
EventAnnual Meeting of the IEEE Photonics Society - Belek-Antalya, Turkey
Duration: 4 Oct 2009 → …

Conference

ConferenceAnnual Meeting of the IEEE Photonics Society
CountryTurkey
CityBelek-Antalya
Period4/10/09 → …

Keywords

  • photonics
  • semiconductor disk laser
  • InGaN laser source

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    Schlosser, P., Hastie, J., Calvez, S., Krysa, A. B., & Dawson, M. (2009). InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm. 743-744. Annual Meeting of the IEEE Photonics Society, Belek-Antalya, Turkey. https://doi.org/10.1109/LEOS.2009.5343357