InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716-755nm

Peter Schlosser, Jennifer Hastie, Stephane Calvez, Andrey Krysa, Martin Dawson

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38 Citations (Scopus)

Abstract

Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (AlxGa1-x)(0.51)In0.49P based semiconductor disk laser with monolithic AlxGa1-xAs distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52mW at 739nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.
Original languageEnglish
Pages (from-to)21782-21787
Number of pages6
JournalOptics Express
Volume17
Issue number24
DOIs
Publication statusPublished - 23 Nov 2009

Keywords

  • quantum dot lasers
  • semiconductor disk laser
  • VECSEL

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