InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716-755nm

Peter Schlosser, Jennifer Hastie, Stephane Calvez, Andrey Krysa, Martin Dawson

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (AlxGa1-x)(0.51)In0.49P based semiconductor disk laser with monolithic AlxGa1-xAs distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52mW at 739nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.
LanguageEnglish
Pages21782-21787
Number of pages6
JournalOptics Express
Volume17
Issue number24
DOIs
Publication statusPublished - 23 Nov 2009

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quantum dots
output
Bragg reflectors
laser cavities
continuous radiation
lasers
diamonds
tuning
wafers
slopes
thresholds
single crystals
wavelengths

Keywords

  • quantum dot lasers
  • semiconductor disk laser
  • VECSEL

Cite this

Schlosser, Peter ; Hastie, Jennifer ; Calvez, Stephane ; Krysa, Andrey ; Dawson, Martin. / InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716-755nm. In: Optics Express. 2009 ; Vol. 17, No. 24. pp. 21782-21787.
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abstract = "Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (AlxGa1-x)(0.51)In0.49P based semiconductor disk laser with monolithic AlxGa1-xAs distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52mW at 739nm was achieved with 0.2{\%} output coupling; the threshold and slope efficiency were 220 mW and 5.7{\%} respectively.",
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InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716-755nm. / Schlosser, Peter; Hastie, Jennifer; Calvez, Stephane; Krysa, Andrey; Dawson, Martin.

In: Optics Express, Vol. 17, No. 24, 23.11.2009, p. 21782-21787.

Research output: Contribution to journalArticle

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T1 - InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716-755nm

AU - Schlosser, Peter

AU - Hastie, Jennifer

AU - Calvez, Stephane

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AU - Dawson, Martin

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AB - Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (AlxGa1-x)(0.51)In0.49P based semiconductor disk laser with monolithic AlxGa1-xAs distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52mW at 739nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.

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