InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching

P.R. Edwards, R.W. Martin, H.S. Kim, K.S. Kim, Y. Chen, I.M. Watson, T. Sands, N.W. Cheung, M.D. Dawson

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Photoluminescence measurements have been used to investigate InGaN/GaN quantum well microcavities formed between two dielectric Bragg reflectors. Both single and ten-period quantum wells emitting near 420 nm were studied. The structures were formed using a combination of MOCVD growth for the nitride layers, laser lift-off to remove the sapphire substrates and electron-beam evaporation to deposit the mirrors. Room temperature photoluminescence measurements have been used to investigate the cavity modes observed from both plasma etched and unetched microcavities, and half widths as low as 0.6 meV were observed. The cavity modes were visible as dips in measured reflectance spectra and as peaks in the PL. Comparison of the mode wavelengths with simulated reflectivity spectra has allowed the determination of the cavity thickness before and after etching; this has shown the etch-back step to have a degree of control (±5%) necessary for the later fabrication of resonant periodic gain structures.
LanguageEnglish
Pages91-94
Number of pages3
JournalPhysica Status Solidi B
Volume228
Issue number1
DOIs
Publication statusPublished - Nov 2001

Fingerprint

Microcavities
Plasma etching
plasma etching
Semiconductor quantum wells
Photoluminescence
etching
quantum wells
Bragg reflectors
cavities
Lasers
Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Nitrides
lasers
reflectance
photoluminescence
Electron beams
Etching
Evaporation

Keywords

  • photoluminescence measurement
  • InGaN/GaN
  • quantum well microcavities
  • dielectric Bragg reflectors

Cite this

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title = "InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching",
abstract = "Photoluminescence measurements have been used to investigate InGaN/GaN quantum well microcavities formed between two dielectric Bragg reflectors. Both single and ten-period quantum wells emitting near 420 nm were studied. The structures were formed using a combination of MOCVD growth for the nitride layers, laser lift-off to remove the sapphire substrates and electron-beam evaporation to deposit the mirrors. Room temperature photoluminescence measurements have been used to investigate the cavity modes observed from both plasma etched and unetched microcavities, and half widths as low as 0.6 meV were observed. The cavity modes were visible as dips in measured reflectance spectra and as peaks in the PL. Comparison of the mode wavelengths with simulated reflectivity spectra has allowed the determination of the cavity thickness before and after etching; this has shown the etch-back step to have a degree of control (±5{\%}) necessary for the later fabrication of resonant periodic gain structures.",
keywords = "photoluminescence measurement, InGaN/GaN, quantum well microcavities, dielectric Bragg reflectors",
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InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching. / Edwards, P.R.; Martin, R.W.; Kim, H.S.; Kim, K.S.; Chen, Y.; Watson, I.M.; Sands, T.; Cheung, N.W.; Dawson, M.D.

In: Physica Status Solidi B, Vol. 228, No. 1, 11.2001, p. 91-94.

Research output: Contribution to journalArticle

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T1 - InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching

AU - Edwards, P.R.

AU - Martin, R.W.

AU - Kim, H.S.

AU - Kim, K.S.

AU - Chen, Y.

AU - Watson, I.M.

AU - Sands, T.

AU - Cheung, N.W.

AU - Dawson, M.D.

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Y1 - 2001/11

N2 - Photoluminescence measurements have been used to investigate InGaN/GaN quantum well microcavities formed between two dielectric Bragg reflectors. Both single and ten-period quantum wells emitting near 420 nm were studied. The structures were formed using a combination of MOCVD growth for the nitride layers, laser lift-off to remove the sapphire substrates and electron-beam evaporation to deposit the mirrors. Room temperature photoluminescence measurements have been used to investigate the cavity modes observed from both plasma etched and unetched microcavities, and half widths as low as 0.6 meV were observed. The cavity modes were visible as dips in measured reflectance spectra and as peaks in the PL. Comparison of the mode wavelengths with simulated reflectivity spectra has allowed the determination of the cavity thickness before and after etching; this has shown the etch-back step to have a degree of control (±5%) necessary for the later fabrication of resonant periodic gain structures.

AB - Photoluminescence measurements have been used to investigate InGaN/GaN quantum well microcavities formed between two dielectric Bragg reflectors. Both single and ten-period quantum wells emitting near 420 nm were studied. The structures were formed using a combination of MOCVD growth for the nitride layers, laser lift-off to remove the sapphire substrates and electron-beam evaporation to deposit the mirrors. Room temperature photoluminescence measurements have been used to investigate the cavity modes observed from both plasma etched and unetched microcavities, and half widths as low as 0.6 meV were observed. The cavity modes were visible as dips in measured reflectance spectra and as peaks in the PL. Comparison of the mode wavelengths with simulated reflectivity spectra has allowed the determination of the cavity thickness before and after etching; this has shown the etch-back step to have a degree of control (±5%) necessary for the later fabrication of resonant periodic gain structures.

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