(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond, X.N. Kang, G.Y. Zhang, E. Gu, M.D. Dawson, I.M. Watson, R.W. Martin

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Abstract

Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process structures grown on GaN-on-sapphire templates and the second using freestanding GaN substrates, which are initially processed by mechanical thinning. Both exploit the properties of an Al0.83In0.17N layer, lattice matched to the GaN substrate and spacer layers. In both cases cavity quality factors >400 are demonstrated by measurements of the cavity-filtered room-temperature excitonic emission near 410 nm.
Original languageEnglish
Article number111112
Number of pages3
JournalApplied Physics Letters
Volume90
Issue number11
DOIs
Publication statusPublished - 15 Mar 2007

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Keywords

  • gallium compounds
  • indium compounds
  • wide band gap semiconductors
  • quantum well lasers
  • microcavity lasers
  • micromirrors
  • laser mirrors
  • optical fabrication
  • laser materials processing

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