(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond, X.N. Kang, G.Y. Zhang, E. Gu, M.D. Dawson, I.M. Watson, R.W. Martin

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Abstract

Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process structures grown on GaN-on-sapphire templates and the second using freestanding GaN substrates, which are initially processed by mechanical thinning. Both exploit the properties of an Al0.83In0.17N layer, lattice matched to the GaN substrate and spacer layers. In both cases cavity quality factors >400 are demonstrated by measurements of the cavity-filtered room-temperature excitonic emission near 410 nm.
Original languageEnglish
Article number111112
Number of pages3
JournalApplied Physics Letters
Volume90
Issue number11
DOIs
Publication statusPublished - 15 Mar 2007

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mirrors
cavities
spacers
Q factors
sapphire
templates
routes
quantum wells
room temperature
lasers

Keywords

  • gallium compounds
  • indium compounds
  • wide band gap semiconductors
  • quantum well lasers
  • microcavity lasers
  • micromirrors
  • laser mirrors
  • optical fabrication
  • laser materials processing

Cite this

Rizzi, F. ; Edwards, P.R. ; Bejtka, K. ; Semond, F. ; Kang, X.N. ; Zhang, G.Y. ; Gu, E. ; Dawson, M.D. ; Watson, I.M. ; Martin, R.W. / (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer. In: Applied Physics Letters. 2007 ; Vol. 90, No. 11.
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title = "(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer",
abstract = "Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process structures grown on GaN-on-sapphire templates and the second using freestanding GaN substrates, which are initially processed by mechanical thinning. Both exploit the properties of an Al0.83In0.17N layer, lattice matched to the GaN substrate and spacer layers. In both cases cavity quality factors >400 are demonstrated by measurements of the cavity-filtered room-temperature excitonic emission near 410 nm.",
keywords = "gallium compounds, indium compounds, wide band gap semiconductors, quantum well lasers, microcavity lasers, micromirrors, laser mirrors, optical fabrication, laser materials processing",
author = "F. Rizzi and P.R. Edwards and K. Bejtka and F. Semond and X.N. Kang and G.Y. Zhang and E. Gu and M.D. Dawson and I.M. Watson and R.W. Martin",
year = "2007",
month = "3",
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Rizzi, F, Edwards, PR, Bejtka, K, Semond, F, Kang, XN, Zhang, GY, Gu, E, Dawson, MD, Watson, IM & Martin, RW 2007, '(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer', Applied Physics Letters, vol. 90, no. 11, 111112. https://doi.org/10.1063/1.2712786

(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer. / Rizzi, F.; Edwards, P.R.; Bejtka, K.; Semond, F.; Kang, X.N.; Zhang, G.Y.; Gu, E.; Dawson, M.D.; Watson, I.M.; Martin, R.W.

In: Applied Physics Letters, Vol. 90, No. 11, 111112, 15.03.2007.

Research output: Contribution to journal › Article

TY - JOUR

T1 - (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

AU - Rizzi, F.

AU - Edwards, P.R.

AU - Bejtka, K.

AU - Semond, F.

AU - Kang, X.N.

AU - Zhang, G.Y.

AU - Gu, E.

AU - Dawson, M.D.

AU - Watson, I.M.

AU - Martin, R.W.

PY - 2007/3/15

Y1 - 2007/3/15

N2 - Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process structures grown on GaN-on-sapphire templates and the second using freestanding GaN substrates, which are initially processed by mechanical thinning. Both exploit the properties of an Al0.83In0.17N layer, lattice matched to the GaN substrate and spacer layers. In both cases cavity quality factors >400 are demonstrated by measurements of the cavity-filtered room-temperature excitonic emission near 410 nm.

AB - Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process structures grown on GaN-on-sapphire templates and the second using freestanding GaN substrates, which are initially processed by mechanical thinning. Both exploit the properties of an Al0.83In0.17N layer, lattice matched to the GaN substrate and spacer layers. In both cases cavity quality factors >400 are demonstrated by measurements of the cavity-filtered room-temperature excitonic emission near 410 nm.

KW - gallium compounds

KW - indium compounds

KW - wide band gap semiconductors

KW - quantum well lasers

KW - microcavity lasers

KW - micromirrors

KW - laser mirrors

KW - optical fabrication

KW - laser materials processing

UR - http://dx.doi.org/10.1063/1.2712786

U2 - 10.1063/1.2712786

DO - 10.1063/1.2712786

M3 - Article

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 111112

ER -

Rizzi F, Edwards PR, Bejtka K, Semond F, Kang XN, Zhang GY et al. (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer. Applied Physics Letters. 2007 Mar 15;90(11). 111112. https://doi.org/10.1063/1.2712786

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