InGaN nano-ring structures for high-efficiency light emitting diodes

H.W. Choi, C.W. Jeon, C. Liu, I.M. Watson, M.D. Dawson, P.R. Edwards, R.W. Martin, S. Tripathy, S.J. Chua

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.
LanguageEnglish
Article number021101
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number2
DOIs
Publication statusPublished - 2005

Fingerprint

ring structures
light emitting diodes
Fresnel diffraction
cathodoluminescence
screening
quantum wells
fabrication
shift
geometry

Keywords

  • indium compounds
  • gallium compounds
  • nanostructured materials
  • nanolithography
  • optical fabrication
  • light emitting diodes
  • photonics

Cite this

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title = "InGaN nano-ring structures for high-efficiency light emitting diodes",
abstract = "A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.",
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InGaN nano-ring structures for high-efficiency light emitting diodes. / Choi, H.W.; Jeon, C.W.; Liu, C.; Watson, I.M.; Dawson, M.D.; Edwards, P.R.; Martin, R.W.; Tripathy, S.; Chua, S.J.

In: Applied Physics Letters, Vol. 86, No. 2, 021101, 2005.

Research output: Contribution to journalArticle

TY - JOUR

T1 - InGaN nano-ring structures for high-efficiency light emitting diodes

AU - Choi, H.W.

AU - Jeon, C.W.

AU - Liu, C.

AU - Watson, I.M.

AU - Dawson, M.D.

AU - Edwards, P.R.

AU - Martin, R.W.

AU - Tripathy, S.

AU - Chua, S.J.

PY - 2005

Y1 - 2005

N2 - A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.

AB - A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.

KW - indium compounds

KW - gallium compounds

KW - nanostructured materials

KW - nanolithography

KW - optical fabrication

KW - light emitting diodes

KW - photonics

UR - http://dx.doi.org/10.1063/1.1849439

U2 - 10.1063/1.1849439

DO - 10.1063/1.1849439

M3 - Article

VL - 86

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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