InGaN nano-ring structures for high-efficiency light emitting diodes

H.W. Choi, C.W. Jeon, C. Liu, I.M. Watson, M.D. Dawson, P.R. Edwards, R.W. Martin, S. Tripathy, S.J. Chua

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A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.
Original languageEnglish
Article number021101
Number of pages3
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 2005


  • indium compounds
  • gallium compounds
  • nanostructured materials
  • nanolithography
  • optical fabrication
  • light emitting diodes
  • photonics

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