InGaN nano-ring structures for high-efficiency light emitting diodes

H. W. Choi; C. W. Jeon; C. Liu; I. M. Watson; M. D. Dawson; P. R. Edwards; R. W. Martin; S. Tripathy; S. J. Chua

doi:10.1063/1.1849439

InGaN nano-ring structures for high-efficiency light emitting diodes

H. W. Choi, C. W. Jeon, C. Liu, I. M. Watson, M. D. Dawson, P. R. Edwards, R. W. Martin, S. Tripathy, S. J. Chua

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Abstract

A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.

Original language	English
Article number	021101
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	2
DOIs	https://doi.org/10.1063/1.1849439
Publication status	Published - 30 Dec 2004

Keywords

indium compounds
gallium compounds
nanostructured materials
nanolithography
optical fabrication
light emitting diodes
photonics

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10.1063/1.1849439

Choi2005APL86Final published version, 473 KB

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title = "InGaN nano-ring structures for high-efficiency light emitting diodes",

abstract = "A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.",

keywords = "indium compounds, gallium compounds, nanostructured materials, nanolithography, optical fabrication, light emitting diodes, photonics",

author = "Choi, {H. W.} and Jeon, {C. W.} and C. Liu and Watson, {I. M.} and Dawson, {M. D.} and Edwards, {P. R.} and Martin, {R. W.} and S. Tripathy and Chua, {S. J.}",

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T1 - InGaN nano-ring structures for high-efficiency light emitting diodes

AU - Choi, H. W.

AU - Jeon, C. W.

AU - Liu, C.

AU - Watson, I. M.

AU - Dawson, M. D.

AU - Edwards, P. R.

AU - Martin, R. W.

AU - Tripathy, S.

AU - Chua, S. J.

PY - 2004/12/30

Y1 - 2004/12/30

N2 - A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.

AB - A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.

KW - indium compounds

KW - gallium compounds

KW - nanostructured materials

KW - nanolithography

KW - optical fabrication

KW - light emitting diodes

KW - photonics

U2 - 10.1063/1.1849439

DO - 10.1063/1.1849439

M3 - Article

SN - 0003-6951

VL - 86

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021101

ER -

InGaN nano-ring structures for high-efficiency light emitting diodes

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Keywords

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