InGaN multiple-quantum-well epifilms on GaN-silicon substrates for microcavities and surface-emitting lasers

J.K. Lee, H. Cho, B.H. Kim, S.H. Park, E. Gu, I.M. Watson, M.D. Dawson

Research output: Contribution to journalArticle

Abstract

We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflectors (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.
LanguageEnglish
Pages407-411
Number of pages4
JournalNew Physics: Korean Physical Society
Volume49
Issue number1
Publication statusPublished - Jul 2006

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surface emitting lasers
quantum wells
membranes
silicon
etching
Bragg reflectors
buffers
microscopes
photoluminescence
optical properties
fabrication

Keywords

  • InGaN/GaN epifilms
  • GaN on silicon substrates
  • multi-quantum-well membranes
  • selective wetetching
  • distributed bragg reflector
  • microcavities
  • surface-emitting lasers

Cite this

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title = "InGaN multiple-quantum-well epifilms on GaN-silicon substrates for microcavities and surface-emitting lasers",
abstract = "We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflectors (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.",
keywords = "InGaN/GaN epifilms, GaN on silicon substrates, multi-quantum-well membranes, selective wetetching, distributed bragg reflector, microcavities, surface-emitting lasers",
author = "J.K. Lee and H. Cho and B.H. Kim and S.H. Park and E. Gu and I.M. Watson and M.D. Dawson",
year = "2006",
month = "7",
language = "English",
volume = "49",
pages = "407--411",
journal = "New Physics: Korean Physical Society",
issn = "0374-4914",
publisher = "Korean Physical Society",
number = "1",

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InGaN multiple-quantum-well epifilms on GaN-silicon substrates for microcavities and surface-emitting lasers. / Lee, J.K.; Cho, H.; Kim, B.H.; Park, S.H.; Gu, E.; Watson, I.M.; Dawson, M.D.

In: New Physics: Korean Physical Society, Vol. 49, No. 1, 07.2006, p. 407-411.

Research output: Contribution to journalArticle

TY - JOUR

T1 - InGaN multiple-quantum-well epifilms on GaN-silicon substrates for microcavities and surface-emitting lasers

AU - Lee, J.K.

AU - Cho, H.

AU - Kim, B.H.

AU - Park, S.H.

AU - Gu, E.

AU - Watson, I.M.

AU - Dawson, M.D.

PY - 2006/7

Y1 - 2006/7

N2 - We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflectors (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.

AB - We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflectors (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.

KW - InGaN/GaN epifilms

KW - GaN on silicon substrates

KW - multi-quantum-well membranes

KW - selective wetetching

KW - distributed bragg reflector

KW - microcavities

KW - surface-emitting lasers

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M3 - Article

VL - 49

SP - 407

EP - 411

JO - New Physics: Korean Physical Society

T2 - New Physics: Korean Physical Society

JF - New Physics: Korean Physical Society

SN - 0374-4914

IS - 1

ER -