InGaN multiple-quantum-well epifilms on GaN-silicon substrates for microcavities and surface-emitting lasers

J.K. Lee, H. Cho, B.H. Kim, S.H. Park, E. Gu, I.M. Watson, M.D. Dawson

Research output: Contribution to journalArticle

Abstract

We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflectors (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.
Original languageEnglish
Pages (from-to)407-411
Number of pages4
JournalNew Physics: Korean Physical Society
Volume49
Issue number1
Publication statusPublished - Jul 2006

Keywords

  • InGaN/GaN epifilms
  • GaN on silicon substrates
  • multi-quantum-well membranes
  • selective wetetching
  • distributed bragg reflector
  • microcavities
  • surface-emitting lasers

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