InGaN microring light-emitting diodes

H.W. Choi, C.W. Jeon, M.D. Dawson

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The fabrication and performance of an InGaN light-emitting diode (LED) array based on a microring device geometry is reported. This design has been adopted in order to increase the surface area for light extraction and to minimize losses due to internal reflections and reabsorption. Electrical characteristics of these devices are similar to those of a conventional large-area LED, while the directed light extraction proves to be superior. In fact, these devices are found to be more efficient when operated at higher currents. This may be attributed to improved heat sinking due to the large surface area to volume ratio. The potential applications of these devices are also discussed.
LanguageEnglish
Pages33-35
Number of pages2
JournalIEEE Photonics Technology Letters
Volume16
Issue number1
DOIs
Publication statusPublished - Jan 2004

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Light emitting diodes
light emitting diodes
Fabrication
sinking
Geometry
high current
heat
fabrication
geometry
Hot Temperature

Keywords

  • InGaN microring light-emitting diodes
  • LED array
  • directed light extraction
  • internal reflections
  • large-area LED
  • light extraction
  • microring device

Cite this

Choi, H.W. ; Jeon, C.W. ; Dawson, M.D. / InGaN microring light-emitting diodes. In: IEEE Photonics Technology Letters. 2004 ; Vol. 16, No. 1. pp. 33-35.
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InGaN microring light-emitting diodes. / Choi, H.W.; Jeon, C.W.; Dawson, M.D.

In: IEEE Photonics Technology Letters, Vol. 16, No. 1, 01.2004, p. 33-35.

Research output: Contribution to journalArticle

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