InGaN micro-pixellated light-emitting diodes with nano-textured surfaces and modified emission profiles

Z. Gong, Y.F. Zhang, P. Kelm, I.M. Watson, E. Gu, M.D. Dawson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We present the fabrication details and performance characteristics of InGaN light-emitting diodes (LEDs) consisting of arrays of interconnected micro-pixels where each micro-pixel is nano-textured via nano-imprinting. We have taken the further step of embodying the pixels in a rhomboidal geometry. It is found that the power output of these nano-textured micro-LEDs with rhomboidal geometries is 57% higher than that of conventional square-shaped broad-area reference LEDs. The series resistance of the textured LEDs is reduced, owing to the multi-finger electrodes introduced. Furthermore, these LEDs can sustain higher operation current of up to 500 mA without encapsulation, suggesting improved thermal dissipation capability. Finally, the combined effects of surface texturing, micro-LED configuration, and geometric shaping on the light extraction are analyzed. It is found that the power enhancement by surface texturing, micro-pixellating and the rhomboidal geometry are 32%, 16%, and 9%, respectively, implying that surface texturing is the most effective contribution to increasing the light extraction efficiency in our design. The angular dependent far-field beam profile is also remarkably changed, compared with the standard Lambertian emission pattern of the conventional square-shaped LEDs. Substantial increase in the EL intensity is evident from both the top surface and the sidewall.
LanguageEnglish
Pages389-393
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume103
Issue number2
DOIs
Publication statusPublished - 3 Mar 2011

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Light emitting diodes
light emitting diodes
profiles
Texturing
Pixels
pixels
Geometry
geometry
Encapsulation
far fields
dissipation
Fabrication
Electrodes
fabrication
electrodes
augmentation
output
configurations

Keywords

  • light emitting diodes
  • InGaN
  • LEDs
  • textured LED

Cite this

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abstract = "We present the fabrication details and performance characteristics of InGaN light-emitting diodes (LEDs) consisting of arrays of interconnected micro-pixels where each micro-pixel is nano-textured via nano-imprinting. We have taken the further step of embodying the pixels in a rhomboidal geometry. It is found that the power output of these nano-textured micro-LEDs with rhomboidal geometries is 57{\%} higher than that of conventional square-shaped broad-area reference LEDs. The series resistance of the textured LEDs is reduced, owing to the multi-finger electrodes introduced. Furthermore, these LEDs can sustain higher operation current of up to 500 mA without encapsulation, suggesting improved thermal dissipation capability. Finally, the combined effects of surface texturing, micro-LED configuration, and geometric shaping on the light extraction are analyzed. It is found that the power enhancement by surface texturing, micro-pixellating and the rhomboidal geometry are 32{\%}, 16{\%}, and 9{\%}, respectively, implying that surface texturing is the most effective contribution to increasing the light extraction efficiency in our design. The angular dependent far-field beam profile is also remarkably changed, compared with the standard Lambertian emission pattern of the conventional square-shaped LEDs. Substantial increase in the EL intensity is evident from both the top surface and the sidewall.",
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InGaN micro-pixellated light-emitting diodes with nano-textured surfaces and modified emission profiles. / Gong, Z.; Zhang, Y.F.; Kelm, P.; Watson, I.M.; Gu, E.; Dawson, M.D.

In: Applied Physics A: Materials Science and Processing, Vol. 103, No. 2, 03.03.2011, p. 389-393.

Research output: Contribution to journalArticle

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AU - Zhang, Y.F.

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AU - Dawson, M.D.

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